Epitaxial 2D SnSe2/ 2D WSe2 van der Waals heterostructures

Kleopatra Emmanouil Aretouli, Dimitra Tsoutsou, Polychronis Tsipas, Jose Marquez-Velasco, Sigiava Aminalragia Giamini, Nicolas Kelaidis, Vassilis Psycharis, Athanasios Dimoulas

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Abstract

van der Waals heterostructures of 2D semiconductor materials can be used to realize a number of (opto)electronic devices including tunneling field effect devices (TFETs). It is shown in this work that high quality SnSe2/WSe2 vdW heterostructure can be grown by molecular beam epitaxy on AlN(0001)/Si(111) substrates using a Bi2Se3 buffer layer. A valence band offset of 0.8 eV matches the energy gap of SnSe2 in such a way that the VB edge of WSe2 and the CB edge of SnSe2 are lined up, making this materials combination suitable for (nearly) broken gap TFETs.

Original languageEnglish
Pages (from-to)23222-23229
Number of pages8
JournalACS Applied Materials and Interfaces
Volume8
Issue number35
DOIs
Publication statusPublished - 7 Sep 2016
Externally publishedYes

Keywords

  • 2D semiconductors
  • molecular beam epitaxy
  • SnSe
  • tunneling field effect transistors
  • van der Waals heterostructures
  • WSe

ASJC Scopus subject areas

  • Materials Science(all)

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