Epitaxial 2D SnSe2/ 2D WSe2 van der Waals heterostructures

Kleopatra Emmanouil Aretouli; Dimitra Tsoutsou; Polychronis Tsipas; Jose Marquez-Velasco; Sigiava Aminalragia Giamini; Nicolas Kelaidis; Vassilis Psycharis; Athanasios Dimoulas

doi:10.1021/acsami.6b02933

Epitaxial 2D SnSe₂/ 2D WSe₂ van der Waals heterostructures

Kleopatra Emmanouil Aretouli, Dimitra Tsoutsou, Polychronis Tsipas, Jose Marquez-Velasco, Sigiava Aminalragia Giamini, Nicolas Kelaidis, Vassilis Psycharis, Athanasios Dimoulas

Research output: Contribution to journal › Article › peer-review

105 Citations (Scopus)

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Abstract

van der Waals heterostructures of 2D semiconductor materials can be used to realize a number of (opto)electronic devices including tunneling field effect devices (TFETs). It is shown in this work that high quality SnSe₂/WSe₂ vdW heterostructure can be grown by molecular beam epitaxy on AlN(0001)/Si(111) substrates using a Bi₂Se₃ buffer layer. A valence band offset of 0.8 eV matches the energy gap of SnSe₂ in such a way that the VB edge of WSe₂ and the CB edge of SnSe₂ are lined up, making this materials combination suitable for (nearly) broken gap TFETs.

Original language	English
Pages (from-to)	23222-23229
Number of pages	8
Journal	ACS Applied Materials and Interfaces
Volume	8
Issue number	35
DOIs	https://doi.org/10.1021/acsami.6b02933
Publication status	Published - 7 Sept 2016
Externally published	Yes

Keywords

2D semiconductors
molecular beam epitaxy
SnSe
tunneling field effect transistors
van der Waals heterostructures
WSe

ASJC Scopus subject areas

General Materials Science

Access to Document

10.1021/acsami.6b02933

Post-PrintAccepted author manuscript, 1.26 MB

Cite this

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title = "Epitaxial 2D SnSe2/ 2D WSe2 van der Waals heterostructures",

abstract = "van der Waals heterostructures of 2D semiconductor materials can be used to realize a number of (opto)electronic devices including tunneling field effect devices (TFETs). It is shown in this work that high quality SnSe2/WSe2 vdW heterostructure can be grown by molecular beam epitaxy on AlN(0001)/Si(111) substrates using a Bi2Se3 buffer layer. A valence band offset of 0.8 eV matches the energy gap of SnSe2 in such a way that the VB edge of WSe2 and the CB edge of SnSe2 are lined up, making this materials combination suitable for (nearly) broken gap TFETs.",

keywords = "2D semiconductors, molecular beam epitaxy, SnSe, tunneling field effect transistors, van der Waals heterostructures, WSe",

author = "Aretouli, {Kleopatra Emmanouil} and Dimitra Tsoutsou and Polychronis Tsipas and Jose Marquez-Velasco and {Aminalragia Giamini}, Sigiava and Nicolas Kelaidis and Vassilis Psycharis and Athanasios Dimoulas",

year = "2016",

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journal = "ACS Applied Materials and Interfaces",

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T1 - Epitaxial 2D SnSe2/ 2D WSe2 van der Waals heterostructures

AU - Aretouli, Kleopatra Emmanouil

AU - Tsoutsou, Dimitra

AU - Tsipas, Polychronis

AU - Marquez-Velasco, Jose

AU - Aminalragia Giamini, Sigiava

AU - Kelaidis, Nicolas

AU - Psycharis, Vassilis

AU - Dimoulas, Athanasios

PY - 2016/9/7

Y1 - 2016/9/7

N2 - van der Waals heterostructures of 2D semiconductor materials can be used to realize a number of (opto)electronic devices including tunneling field effect devices (TFETs). It is shown in this work that high quality SnSe2/WSe2 vdW heterostructure can be grown by molecular beam epitaxy on AlN(0001)/Si(111) substrates using a Bi2Se3 buffer layer. A valence band offset of 0.8 eV matches the energy gap of SnSe2 in such a way that the VB edge of WSe2 and the CB edge of SnSe2 are lined up, making this materials combination suitable for (nearly) broken gap TFETs.

AB - van der Waals heterostructures of 2D semiconductor materials can be used to realize a number of (opto)electronic devices including tunneling field effect devices (TFETs). It is shown in this work that high quality SnSe2/WSe2 vdW heterostructure can be grown by molecular beam epitaxy on AlN(0001)/Si(111) substrates using a Bi2Se3 buffer layer. A valence band offset of 0.8 eV matches the energy gap of SnSe2 in such a way that the VB edge of WSe2 and the CB edge of SnSe2 are lined up, making this materials combination suitable for (nearly) broken gap TFETs.

KW - 2D semiconductors

KW - molecular beam epitaxy

KW - SnSe

KW - tunneling field effect transistors

KW - van der Waals heterostructures

KW - WSe

U2 - 10.1021/acsami.6b02933

DO - 10.1021/acsami.6b02933

M3 - Article

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