Epitaxial 2D MoSe2 (HfSe2) Semiconductor/2D TaSe2 Metal van der Waals Heterostructures

Dimitra Tsoutsou, Kleopatra E. Aretouli, Polychronis Tsipas, Jose Marquez-Velasco, Evangelia Xenogiannopoulou, Nicolas Kelaidis, Sigiava Aminalragia Giamini, Athanasios Dimoulas

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Molecular beam epitaxy of 2D metal TaSe2/2D MoSe2 (HfSe2) semiconductor heterostructures on epi-AlN(0001)/Si(111) substrates is reported. Electron diffraction reveals an in-plane orientation indicative of van der Waals epitaxy, whereas electronic band imaging supported by first-principles calculations and X-ray photoelectron spectroscopy indicate the presence of a dominant trigonal prismatic 2H-TaSe2 phase and a minor contribution from octahedrally coordinated TaSe2, which is present in TaSe2/AlN and TaSe2/HfSe2/AlN but notably absent in the TaSe2/MoSe2/AlN, indicating superior structural quality of TaSe2 grown on MoSe2. Apart from its structural and chemical compatibility with the selenide semiconductors, TaSe2 has a workfunction of 5.5 eV as measured by ultraviolet photoelectron spectroscopy, which matches very well with the semiconductor workfunctions, implying that epi-TaSe2 can be used for low-resistivity contacts to MoSe2 and HfSe2.

Original languageEnglish
Pages (from-to)1836-1841
Number of pages6
JournalACS Applied Materials and Interfaces
Issue number3
Publication statusPublished - 27 Jan 2016


  • HfSe
  • metal/semiconductor contacts
  • molecular beam epitaxy
  • MoSe
  • TaSe
  • van der Waals heterostructures

ASJC Scopus subject areas

  • Materials Science(all)

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