Epitaxial 2D MoSe2 (HfSe2) Semiconductor/2D TaSe2 Metal van der Waals Heterostructures

Dimitra Tsoutsou; Kleopatra E. Aretouli; Polychronis Tsipas; Jose Marquez-Velasco; Evangelia Xenogiannopoulou; Nicolas Kelaidis; Sigiava Aminalragia Giamini; Athanasios Dimoulas

doi:10.1021/acsami.5b09743

Epitaxial 2D MoSe₂ (HfSe₂) Semiconductor/2D TaSe₂ Metal van der Waals Heterostructures

Dimitra Tsoutsou, Kleopatra E. Aretouli, Polychronis Tsipas, Jose Marquez-Velasco, Evangelia Xenogiannopoulou, Nicolas Kelaidis, Sigiava Aminalragia Giamini, Athanasios Dimoulas

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Abstract

Molecular beam epitaxy of 2D metal TaSe₂/2D MoSe₂ (HfSe₂) semiconductor heterostructures on epi-AlN(0001)/Si(111) substrates is reported. Electron diffraction reveals an in-plane orientation indicative of van der Waals epitaxy, whereas electronic band imaging supported by first-principles calculations and X-ray photoelectron spectroscopy indicate the presence of a dominant trigonal prismatic 2H-TaSe₂ phase and a minor contribution from octahedrally coordinated TaSe₂, which is present in TaSe₂/AlN and TaSe₂/HfSe₂/AlN but notably absent in the TaSe₂/MoSe₂/AlN, indicating superior structural quality of TaSe₂ grown on MoSe₂. Apart from its structural and chemical compatibility with the selenide semiconductors, TaSe₂ has a workfunction of 5.5 eV as measured by ultraviolet photoelectron spectroscopy, which matches very well with the semiconductor workfunctions, implying that epi-TaSe₂ can be used for low-resistivity contacts to MoSe₂ and HfSe₂.

Original language	English
Pages (from-to)	1836-1841
Number of pages	6
Journal	ACS Applied Materials and Interfaces
Volume	8
Issue number	3
DOIs	https://doi.org/10.1021/acsami.5b09743
Publication status	Published - 27 Jan 2016

Keywords

HfSe
metal/semiconductor contacts
molecular beam epitaxy
MoSe
TaSe
van der Waals heterostructures

ASJC Scopus subject areas

General Materials Science

Access to Document

10.1021/acsami.5b09743

Post-PrintAccepted author manuscript, 871 KB

Cite this

@article{4b23b11148c64c49b0a4472413837232,

title = "Epitaxial 2D MoSe2 (HfSe2) Semiconductor/2D TaSe2 Metal van der Waals Heterostructures",

abstract = "Molecular beam epitaxy of 2D metal TaSe2/2D MoSe2 (HfSe2) semiconductor heterostructures on epi-AlN(0001)/Si(111) substrates is reported. Electron diffraction reveals an in-plane orientation indicative of van der Waals epitaxy, whereas electronic band imaging supported by first-principles calculations and X-ray photoelectron spectroscopy indicate the presence of a dominant trigonal prismatic 2H-TaSe2 phase and a minor contribution from octahedrally coordinated TaSe2, which is present in TaSe2/AlN and TaSe2/HfSe2/AlN but notably absent in the TaSe2/MoSe2/AlN, indicating superior structural quality of TaSe2 grown on MoSe2. Apart from its structural and chemical compatibility with the selenide semiconductors, TaSe2 has a workfunction of 5.5 eV as measured by ultraviolet photoelectron spectroscopy, which matches very well with the semiconductor workfunctions, implying that epi-TaSe2 can be used for low-resistivity contacts to MoSe2 and HfSe2.",

keywords = "HfSe, metal/semiconductor contacts, molecular beam epitaxy, MoSe, TaSe, van der Waals heterostructures",

author = "Dimitra Tsoutsou and Aretouli, {Kleopatra E.} and Polychronis Tsipas and Jose Marquez-Velasco and Evangelia Xenogiannopoulou and Nicolas Kelaidis and {Aminalragia Giamini}, Sigiava and Athanasios Dimoulas",

year = "2016",

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language = "English",

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journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

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T1 - Epitaxial 2D MoSe2 (HfSe2) Semiconductor/2D TaSe2 Metal van der Waals Heterostructures

AU - Tsoutsou, Dimitra

AU - Aretouli, Kleopatra E.

AU - Tsipas, Polychronis

AU - Marquez-Velasco, Jose

AU - Xenogiannopoulou, Evangelia

AU - Kelaidis, Nicolas

AU - Aminalragia Giamini, Sigiava

AU - Dimoulas, Athanasios

PY - 2016/1/27

Y1 - 2016/1/27

N2 - Molecular beam epitaxy of 2D metal TaSe2/2D MoSe2 (HfSe2) semiconductor heterostructures on epi-AlN(0001)/Si(111) substrates is reported. Electron diffraction reveals an in-plane orientation indicative of van der Waals epitaxy, whereas electronic band imaging supported by first-principles calculations and X-ray photoelectron spectroscopy indicate the presence of a dominant trigonal prismatic 2H-TaSe2 phase and a minor contribution from octahedrally coordinated TaSe2, which is present in TaSe2/AlN and TaSe2/HfSe2/AlN but notably absent in the TaSe2/MoSe2/AlN, indicating superior structural quality of TaSe2 grown on MoSe2. Apart from its structural and chemical compatibility with the selenide semiconductors, TaSe2 has a workfunction of 5.5 eV as measured by ultraviolet photoelectron spectroscopy, which matches very well with the semiconductor workfunctions, implying that epi-TaSe2 can be used for low-resistivity contacts to MoSe2 and HfSe2.

AB - Molecular beam epitaxy of 2D metal TaSe2/2D MoSe2 (HfSe2) semiconductor heterostructures on epi-AlN(0001)/Si(111) substrates is reported. Electron diffraction reveals an in-plane orientation indicative of van der Waals epitaxy, whereas electronic band imaging supported by first-principles calculations and X-ray photoelectron spectroscopy indicate the presence of a dominant trigonal prismatic 2H-TaSe2 phase and a minor contribution from octahedrally coordinated TaSe2, which is present in TaSe2/AlN and TaSe2/HfSe2/AlN but notably absent in the TaSe2/MoSe2/AlN, indicating superior structural quality of TaSe2 grown on MoSe2. Apart from its structural and chemical compatibility with the selenide semiconductors, TaSe2 has a workfunction of 5.5 eV as measured by ultraviolet photoelectron spectroscopy, which matches very well with the semiconductor workfunctions, implying that epi-TaSe2 can be used for low-resistivity contacts to MoSe2 and HfSe2.

KW - HfSe

KW - metal/semiconductor contacts

KW - molecular beam epitaxy

KW - MoSe

KW - TaSe

KW - van der Waals heterostructures

U2 - 10.1021/acsami.5b09743

DO - 10.1021/acsami.5b09743

M3 - Article

AN - SCOPUS:84955585610

SN - 1944-8244

VL - 8

SP - 1836

EP - 1841

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 3

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