EMI Mitigation for SiC Power Module with Chip-on-Ceramic Heatsink Packaging

Zhaobo Zhang; Wenzhi Zhou; Xibo Yuan; Elaheh Arjmand; Lihong Xie

doi:10.1109/TPEL.2024.3486082

EMI Mitigation for SiC Power Module with Chip-on-Ceramic Heatsink Packaging

Zhaobo Zhang, Wenzhi Zhou, Xibo Yuan, Elaheh Arjmand, Lihong Xie

Centre for E-Mobility and Clean Growth

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Abstract

This letter proposes the use of a chip-on-ceramic heatsink packaging to reduce common-mode (CM) noise at the package level while improving thermal performance for SiC power modules. The packaging directly attaches the SiC MOSFETs to a metallized AlN ceramic heatsink, reducing CM capacitive coupling between the switching node and ground, thereby decreasing CM noise. A 400 V to 200 V DC-DC buck converter is built to validate the effectiveness of the packaging in mitigating CM noise. The experimental results demonstrate a reduction in CM current, with a decrease of over 5 dB between 5 MHz and 20 MHz frequency spectrum for the chip-on-ceramic heatsink power module compared to a conventional non-baseplate module. Thermal test results indicate that the ceramic module exhibits better thermal performance than the conventional module, due to the reduced layers between the heatsink and the dice.

Original language	English
Pages (from-to)	(In-Press)
Number of pages	6
Journal	IEEE Transactions on Power Electronics
Volume	(In-Press)
Early online date	24 Oct 2024
DOIs	https://doi.org/10.1109/TPEL.2024.3486082
Publication status	E-pub ahead of print - 24 Oct 2024

Bibliographical note

© 2024 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Copyright © and Moral Rights are retained by the author(s) and/ or other copyright owners. A copy can be downloaded for personal non-commercial research or study, without prior permission or charge. This item cannot be reproduced or quoted extensively from without first obtaining permission in writing from the copyright holder(s). The content must not be changed in any way or sold commercially in any format or medium without the formal permission of the copyright holders.

This document is the author’s post-print version, incorporating any revisions agreed during the peer-review process. Some differences between the published version and this version may remain and you are advised to consult the published version if you wish to cite from it.

Keywords

Common-mode (CM) noise
chip-on-ceramic heatsink packaging
high dv/dt
power module
SiC MOSFET

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10.1109/TPEL.2024.3486082

Zhou2024AAMAccepted author manuscript, 4.54 MB

Cite this

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title = "EMI Mitigation for SiC Power Module with Chip-on-Ceramic Heatsink Packaging",

abstract = "This letter proposes the use of a chip-on-ceramic heatsink packaging to reduce common-mode (CM) noise at the package level while improving thermal performance for SiC power modules. The packaging directly attaches the SiC MOSFETs to a metallized AlN ceramic heatsink, reducing CM capacitive coupling between the switching node and ground, thereby decreasing CM noise. A 400 V to 200 V DC-DC buck converter is built to validate the effectiveness of the packaging in mitigating CM noise. The experimental results demonstrate a reduction in CM current, with a decrease of over 5 dB between 5 MHz and 20 MHz frequency spectrum for the chip-on-ceramic heatsink power module compared to a conventional non-baseplate module. Thermal test results indicate that the ceramic module exhibits better thermal performance than the conventional module, due to the reduced layers between the heatsink and the dice.",

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note = "{\textcopyright} 2024 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. Copyright {\textcopyright} and Moral Rights are retained by the author(s) and/ or other copyright owners. A copy can be downloaded for personal non-commercial research or study, without prior permission or charge. This item cannot be reproduced or quoted extensively from without first obtaining permission in writing from the copyright holder(s). The content must not be changed in any way or sold commercially in any format or medium without the formal permission of the copyright holders. This document is the author{\textquoteright}s post-print version, incorporating any revisions agreed during the peer-review process. Some differences between the published version and this version may remain and you are advised to consult the published version if you wish to cite from it. ",

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N2 - This letter proposes the use of a chip-on-ceramic heatsink packaging to reduce common-mode (CM) noise at the package level while improving thermal performance for SiC power modules. The packaging directly attaches the SiC MOSFETs to a metallized AlN ceramic heatsink, reducing CM capacitive coupling between the switching node and ground, thereby decreasing CM noise. A 400 V to 200 V DC-DC buck converter is built to validate the effectiveness of the packaging in mitigating CM noise. The experimental results demonstrate a reduction in CM current, with a decrease of over 5 dB between 5 MHz and 20 MHz frequency spectrum for the chip-on-ceramic heatsink power module compared to a conventional non-baseplate module. Thermal test results indicate that the ceramic module exhibits better thermal performance than the conventional module, due to the reduced layers between the heatsink and the dice.

AB - This letter proposes the use of a chip-on-ceramic heatsink packaging to reduce common-mode (CM) noise at the package level while improving thermal performance for SiC power modules. The packaging directly attaches the SiC MOSFETs to a metallized AlN ceramic heatsink, reducing CM capacitive coupling between the switching node and ground, thereby decreasing CM noise. A 400 V to 200 V DC-DC buck converter is built to validate the effectiveness of the packaging in mitigating CM noise. The experimental results demonstrate a reduction in CM current, with a decrease of over 5 dB between 5 MHz and 20 MHz frequency spectrum for the chip-on-ceramic heatsink power module compared to a conventional non-baseplate module. Thermal test results indicate that the ceramic module exhibits better thermal performance than the conventional module, due to the reduced layers between the heatsink and the dice.

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EMI Mitigation for SiC Power Module with Chip-on-Ceramic Heatsink Packaging

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