Electrical Performance and Reliability Characterization of a SiC MOSFET Power Module with Embedded Decoupling Capacitors

Li Yang, Ke Li, Jingru Dai, Martin Corfield, Anne Harris, Krzysztof Paciura, John O Brien, C. Mark Johnson

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)
128 Downloads (Pure)


Integration of decoupling capacitors into silicon carbide (SiC) metal oxide semiconductor field effect transistor ( mosfet) modules is an advanced solution to mitigate the effect of parasitic inductance induced by module assembly interconnects. In this paper, the switching transient behavior is reported for a 1.2-kV SiC mosfet module with embedded dc-link capacitors. It shows faster switching transition and less overshoot voltage compared to a module using an identical package but without capacitors. Active power cycling and passive temperature cycling are carried out for package reliability characterization and comparisons are made with commercial Si and SiC power modules. Scanning acoustic microscopy images and thermal structure functions are presented to quantify the effects of package degradation. The results demonstrate that the SiC modules with embedded capacitors have similar reliability performance to commercial modules and that the reliability is not adversely affected by the presence of the decoupling capacitors.

Original languageEnglish
Article number8318641
Pages (from-to)10594-10601
Number of pages8
JournalIEEE Transactions on Power Electronics
Issue number12
Early online date16 Mar 2018
Publication statusPublished - Dec 2018
Externally publishedYes

Bibliographical note

This work is licensed under a Creative Commons Attribution 3.0 License. For more information, see http://creativecommons.org/licenses/by/3.0/


  • Embedded capacitor
  • Metal oxide semiconductor field effect transistor (MOSFET) module
  • Silicon carbide
  • Switching performance
  • Thermo-mechanical reliability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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