Effect of Phosphorous Inoculation on Creep Behavior of a Hypereutectic Al-Si Alloy

Masoumeh Faraji, H. Khalilpour

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Creep behavior of Al-Si hypereutectic alloys inoculated with phosphorus was investigated using the impression creep testing. The results showed that at stress regimes of up to 400-450 MPa and temperatures up to 300 °C, no significant creep deformation occurred in both uninoculated and inoculated specimens; however, at temperatures above 300 °C, the inoculated alloys presented better creep properties. Creep data were used to calculate the stress exponent of steady-state creep rate, n, and creep activation energy, Q, for different additive conditions where n was found varied between 5 and 8. Owing to the fact that most alloys have lower values for n (4, 5), threshold stress was estimated for studied conditions. The creep governing mechanisms for different conditions are discussed here, with a particular attention to the effect of phosphorous addition on the microstructural features, including number of primary silicon particles, mean primary silicon spacing, and morphology and distribution of eutectic silicon.
Original languageEnglish
Pages (from-to)3467-3473
Number of pages7
JournalJournal of Materials Engineering and Performance
Volume23
Issue number10
Early online date18 Jul 2014
DOIs
Publication statusPublished - 1 Oct 2014

Fingerprint

Creep
Silicon
Creep testing
Phosphorus
Eutectics
Activation energy
Temperature

Keywords

  • Al-Si hypereutectic alloys
  • casting and primary silicon refinement
  • impression creep testing

Cite this

Effect of Phosphorous Inoculation on Creep Behavior of a Hypereutectic Al-Si Alloy. / Faraji, Masoumeh; Khalilpour, H.

In: Journal of Materials Engineering and Performance, Vol. 23, No. 10, 01.10.2014, p. 3467-3473.

Research output: Contribution to journalArticle

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