Effect of hydrogen on the electrical resistance of NbSe2 in a wide temperature range

A. Chroneos, G. Ya Khadzhai, V. I. Biletskyi, M. V. Kislitsa, R. V. Vovk

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3 Citations (Scopus)
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The electrical resistivity of niobium diselenide (NbSe2) with hydrogen was investigated in the temperature range Tc – 300 K. It was determined that hydrogen inhibits the formation of a charge density wave. It was shown that hydride phase with niobium is formed due to hydrogen in NbSe2 layers at low temperatures, which decomposes with increasing temperature to form a solid solution. The temperature dependence of the resistivity is approximated by the Bloch–Grüneisen function. The approximation parameters vary depending on the amount of dissolved hydrogen.

Original languageEnglish
Pages (from-to)13588–13593
Number of pages6
JournalJournal of Materials Science: Materials in Electronics
Issue number10
Early online date27 Apr 2021
Publication statusPublished - May 2021

Bibliographical note

Funding Information:
This work is supported in part by Ministry of Education and Science of Ukraine, with grant SR No. 0119U002524.

Publisher Copyright:
© 2021, The Author(s).

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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