Effect of hydrogen on the electrical resistance of NbSe2 in a wide temperature range

A. Chroneos; G. Ya Khadzhai; V. I. Biletskyi; M. V. Kislitsa; R. V. Vovk

doi:10.1007/s10854-021-05934-2

Effect of hydrogen on the electrical resistance of NbSe₂ in a wide temperature range

A. Chroneos, G. Ya Khadzhai, V. I. Biletskyi, M. V. Kislitsa, R. V. Vovk

College of Engineering, Environment & Science

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

54 Downloads (Pure)

Abstract

The electrical resistivity of niobium diselenide (NbSe₂) with hydrogen was investigated in the temperature range T_c – 300 K. It was determined that hydrogen inhibits the formation of a charge density wave. It was shown that hydride phase with niobium is formed due to hydrogen in NbSe₂ layers at low temperatures, which decomposes with increasing temperature to form a solid solution. The temperature dependence of the resistivity is approximated by the Bloch–Grüneisen function. The approximation parameters vary depending on the amount of dissolved hydrogen.

Original language	English
Pages (from-to)	13588–13593
Number of pages	6
Journal	Journal of Materials Science: Materials in Electronics
Volume	32
Issue number	10
Early online date	27 Apr 2021
DOIs	https://doi.org/10.1007/s10854-021-05934-2
Publication status	Published - May 2021

Bibliographical note

Funding Information:
This work is supported in part by Ministry of Education and Science of Ukraine, with grant SR No. 0119U002524.

Publisher Copyright:
© 2021, The Author(s).

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1007/s10854-021-05934-2Licence: CC BY

Chroneos_et_al_Effect_of_hydrogenFinal published version, 567 KBLicence: CC BY

Cite this

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title = "Effect of hydrogen on the electrical resistance of NbSe2 in a wide temperature range",

abstract = "The electrical resistivity of niobium diselenide (NbSe2) with hydrogen was investigated in the temperature range Tc – 300 K. It was determined that hydrogen inhibits the formation of a charge density wave. It was shown that hydride phase with niobium is formed due to hydrogen in NbSe2 layers at low temperatures, which decomposes with increasing temperature to form a solid solution. The temperature dependence of the resistivity is approximated by the Bloch–Gr{\"u}neisen function. The approximation parameters vary depending on the amount of dissolved hydrogen.",

author = "A. Chroneos and Khadzhai, {G. Ya} and Biletskyi, {V. I.} and Kislitsa, {M. V.} and Vovk, {R. V.}",

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AU - Chroneos, A.

AU - Khadzhai, G. Ya

AU - Biletskyi, V. I.

AU - Kislitsa, M. V.

AU - Vovk, R. V.

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AB - The electrical resistivity of niobium diselenide (NbSe2) with hydrogen was investigated in the temperature range Tc – 300 K. It was determined that hydrogen inhibits the formation of a charge density wave. It was shown that hydride phase with niobium is formed due to hydrogen in NbSe2 layers at low temperatures, which decomposes with increasing temperature to form a solid solution. The temperature dependence of the resistivity is approximated by the Bloch–Grüneisen function. The approximation parameters vary depending on the amount of dissolved hydrogen.

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