The electrical resistivity of niobium diselenide (NbSe2) with hydrogen was investigated in the temperature range Tc – 300 K. It was determined that hydrogen inhibits the formation of a charge density wave. It was shown that hydride phase with niobium is formed due to hydrogen in NbSe2 layers at low temperatures, which decomposes with increasing temperature to form a solid solution. The temperature dependence of the resistivity is approximated by the Bloch–Grüneisen function. The approximation parameters vary depending on the amount of dissolved hydrogen.
|Number of pages||6|
|Journal||Journal of Materials Science: Materials in Electronics|
|Early online date||27 Apr 2021|
|Publication status||Published - May 2021|
Bibliographical noteFunding Information:
This work is supported in part by Ministry of Education and Science of Ukraine, with grant SR No. 0119U002524.
© 2021, The Author(s).
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering