Early electromigration effects and early resistance changes

A. Scorzoni, I. De Munari, M. Impronta, N. Kelaidis

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

This paper reviews di€erent known physical phenomena acting during electromigration, such as changes in the mechanical stress of the metal line, void growth and precipitation/dissolution of alloy elements (Cu, Si) and their e€ects on early resistance changes. The superposition of all these phenomena is also discussed to describe the typical early resistance changes detected in Al±Cu lines of the present technology

Original languageEnglish
Pages (from-to)1647-1656
Number of pages10
JournalMicroelectronics Reliability
Volume39
Issue number11
DOIs
Publication statusPublished - Nov 1999
Externally publishedYes

Fingerprint

Electromigration
electromigration
Dissolution
Metals
voids
dissolving
metals

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Early electromigration effects and early resistance changes. / Scorzoni, A.; De Munari, I.; Impronta, M.; Kelaidis, N.

In: Microelectronics Reliability, Vol. 39, No. 11, 11.1999, p. 1647-1656.

Research output: Contribution to journalArticle

Scorzoni, A. ; De Munari, I. ; Impronta, M. ; Kelaidis, N. / Early electromigration effects and early resistance changes. In: Microelectronics Reliability. 1999 ; Vol. 39, No. 11. pp. 1647-1656.
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