Early electromigration effects and early resistance changes

A. Scorzoni; I. De Munari; M. Impronta; N. Kelaidis

doi:10.1016/S0026-2714(99)00170-5

Early electromigration effects and early resistance changes

A. Scorzoni, I. De Munari, M. Impronta, N. Kelaidis

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

This paper reviews di€erent known physical phenomena acting during electromigration, such as changes in the mechanical stress of the metal line, void growth and precipitation/dissolution of alloy elements (Cu, Si) and their e€ects on early resistance changes. The superposition of all these phenomena is also discussed to describe the typical early resistance changes detected in Al±Cu lines of the present technology

Original language	English
Pages (from-to)	1647-1656
Number of pages	10
Journal	Microelectronics Reliability
Volume	39
Issue number	11
DOIs	https://doi.org/10.1016/S0026-2714(99)00170-5
Publication status	Published - Nov 1999
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0026-2714(99)00170-5

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@article{51653cb8f7db438c84154d0f9728218a,

title = "Early electromigration effects and early resistance changes",

abstract = "This paper reviews di€erent known physical phenomena acting during electromigration, such as changes in the mechanical stress of the metal line, void growth and precipitation/dissolution of alloy elements (Cu, Si) and their e€ects on early resistance changes. The superposition of all these phenomena is also discussed to describe the typical early resistance changes detected in Al±Cu lines of the present technology",

author = "A. Scorzoni and {De Munari}, I. and M. Impronta and N. Kelaidis",

year = "1999",

month = nov,

doi = "10.1016/S0026-2714(99)00170-5",

language = "English",

volume = "39",

pages = "1647--1656",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier",

number = "11",

}

TY - JOUR

T1 - Early electromigration effects and early resistance changes

AU - Scorzoni, A.

AU - De Munari, I.

AU - Impronta, M.

AU - Kelaidis, N.

PY - 1999/11

Y1 - 1999/11

N2 - This paper reviews di€erent known physical phenomena acting during electromigration, such as changes in the mechanical stress of the metal line, void growth and precipitation/dissolution of alloy elements (Cu, Si) and their e€ects on early resistance changes. The superposition of all these phenomena is also discussed to describe the typical early resistance changes detected in Al±Cu lines of the present technology

AB - This paper reviews di€erent known physical phenomena acting during electromigration, such as changes in the mechanical stress of the metal line, void growth and precipitation/dissolution of alloy elements (Cu, Si) and their e€ects on early resistance changes. The superposition of all these phenomena is also discussed to describe the typical early resistance changes detected in Al±Cu lines of the present technology

U2 - 10.1016/S0026-2714(99)00170-5

DO - 10.1016/S0026-2714(99)00170-5

M3 - Article

AN - SCOPUS:0033221559

SN - 0026-2714

VL - 39

SP - 1647

EP - 1656

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 11

ER -

Early electromigration effects and early resistance changes

Abstract

ASJC Scopus subject areas

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