New dynamic electro-thermal models of the power MOSFET, and power bipolar devices (PiN diode and IGBT) are presented in this paper. Firstly, electric device models were made, and then they were transformed into the electrothermal models by adding a thermal node. This thermal node stores information about junction temperature and it represents a connection between the device and rest of the circuit thermal network. All models have been found to be efficient and robust in all cases examined.
|Number of pages||8|
|Journal||Annual IEEE Semiconductor Thermal Measurement and Management Symposium|
|Publication status||Published - 7 Aug 2002|
|Event||17th Annual IEEE Semiconductor Thermal Measurement Symposium - San Jose, CA, United States|
Duration: 20 Mar 2001 → 22 Mar 2001
ASJC Scopus subject areas
- Electrical and Electronic Engineering