Dynamic electro-thermal physically based compact models of the power devices for device and circuit simulations

P. M. Igic, P. A. Mawby, M. S. Towers, S. Batcup

Research output: Contribution to journalConference article

19 Citations (Scopus)

Abstract

New dynamic electro-thermal models of the power MOSFET, and power bipolar devices (PiN diode and IGBT) are presented in this paper. Firstly, electric device models were made, and then they were transformed into the electrothermal models by adding a thermal node. This thermal node stores information about junction temperature and it represents a connection between the device and rest of the circuit thermal network. All models have been found to be efficient and robust in all cases examined.

Original languageEnglish
Pages (from-to)35-42
Number of pages8
JournalAnnual IEEE Semiconductor Thermal Measurement and Management Symposium
DOIs
Publication statusPublished - 7 Aug 2002
Externally publishedYes
Event17th Annual IEEE Semiconductor Thermal Measurement Symposium - San Jose, CA, United States
Duration: 20 Mar 200122 Mar 2001

Keywords

  • Compact
  • Diode
  • IGBT
  • Model
  • MOSFET
  • PiN

ASJC Scopus subject areas

  • Instrumentation
  • Electrical and Electronic Engineering

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