Dynamic electro-thermal physically based compact models of the power devices for device and circuit simulations

P. M. Igic; P. A. Mawby; M. S. Towers; S. Batcup

doi:10.1109/STHERM.2001.915142

Dynamic electro-thermal physically based compact models of the power devices for device and circuit simulations

P. M. Igic, P. A. Mawby, M. S. Towers, S. Batcup

Swansea University

Research output: Contribution to journal › Conference article › peer-review

23 Citations (Scopus)

Abstract

New dynamic electro-thermal models of the power MOSFET, and power bipolar devices (PiN diode and IGBT) are presented in this paper. Firstly, electric device models were made, and then they were transformed into the electrothermal models by adding a thermal node. This thermal node stores information about junction temperature and it represents a connection between the device and rest of the circuit thermal network. All models have been found to be efficient and robust in all cases examined.

Original language	English
Pages (from-to)	35-42
Number of pages	8
Journal	Annual IEEE Semiconductor Thermal Measurement and Management Symposium
DOIs	https://doi.org/10.1109/STHERM.2001.915142
Publication status	Published - 7 Aug 2002
Externally published	Yes
Event	17th Annual IEEE Semiconductor Thermal Measurement Symposium - San Jose, CA, United States Duration: 20 Mar 2001 → 22 Mar 2001

Keywords

Compact
Diode
IGBT
Model
MOSFET
PiN

ASJC Scopus subject areas

Instrumentation
Electrical and Electronic Engineering

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10.1109/STHERM.2001.915142

Cite this

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title = "Dynamic electro-thermal physically based compact models of the power devices for device and circuit simulations",

abstract = "New dynamic electro-thermal models of the power MOSFET, and power bipolar devices (PiN diode and IGBT) are presented in this paper. Firstly, electric device models were made, and then they were transformed into the electrothermal models by adding a thermal node. This thermal node stores information about junction temperature and it represents a connection between the device and rest of the circuit thermal network. All models have been found to be efficient and robust in all cases examined.",

keywords = "Compact, Diode, IGBT, Model, MOSFET, PiN",

author = "Igic, {P. M.} and Mawby, {P. A.} and Towers, {M. S.} and S. Batcup",

year = "2002",

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doi = "10.1109/STHERM.2001.915142",

language = "English",

pages = "35--42",

journal = "Annual IEEE Semiconductor Thermal Measurement and Management Symposium",

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note = "17th Annual IEEE Semiconductor Thermal Measurement Symposium ; Conference date: 20-03-2001 Through 22-03-2001",

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T1 - Dynamic electro-thermal physically based compact models of the power devices for device and circuit simulations

AU - Igic, P. M.

AU - Mawby, P. A.

AU - Towers, M. S.

AU - Batcup, S.

PY - 2002/8/7

Y1 - 2002/8/7

N2 - New dynamic electro-thermal models of the power MOSFET, and power bipolar devices (PiN diode and IGBT) are presented in this paper. Firstly, electric device models were made, and then they were transformed into the electrothermal models by adding a thermal node. This thermal node stores information about junction temperature and it represents a connection between the device and rest of the circuit thermal network. All models have been found to be efficient and robust in all cases examined.

AB - New dynamic electro-thermal models of the power MOSFET, and power bipolar devices (PiN diode and IGBT) are presented in this paper. Firstly, electric device models were made, and then they were transformed into the electrothermal models by adding a thermal node. This thermal node stores information about junction temperature and it represents a connection between the device and rest of the circuit thermal network. All models have been found to be efficient and robust in all cases examined.

KW - Compact

KW - Diode

KW - IGBT

KW - Model

KW - MOSFET

KW - PiN

UR - http://www.scopus.com/inward/record.url?scp=0035007852&partnerID=8YFLogxK

U2 - 10.1109/STHERM.2001.915142

DO - 10.1109/STHERM.2001.915142

M3 - Conference article

AN - SCOPUS:0035007852

SN - 1065-2221

SP - 35

EP - 42

JO - Annual IEEE Semiconductor Thermal Measurement and Management Symposium

JF - Annual IEEE Semiconductor Thermal Measurement and Management Symposium

T2 - 17th Annual IEEE Semiconductor Thermal Measurement Symposium

Y2 - 20 March 2001 through 22 March 2001

ER -

Dynamic electro-thermal physically based compact models of the power devices for device and circuit simulations

Abstract

Keywords

ASJC Scopus subject areas

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