This letter presents first-ever fabricated GaN split-current magnetic sensor device. Device operation and key manufacturing steps are also presented. The measured relative current sensitivity is constant at 14 % T -1 for wide mT range of the magnetic field. Constant sensitivity of a fabricated sensor can be attributed to device's 2DEG nature, i.e., its high electron concentration and mobility, and very small layer thickness.
|Pages (from-to)||746 - 748|
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|Early online date||15 Mar 2018|
|Publication status||Published - May 2018|
Bibliographical note© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must
be obtained for all other uses, in any current or future media, including
reprinting/republishing this material for advertising or promotional purposes,
creating new collective works, for resale or redistribution to servers or lists, or
reuse of any copyrighted component of this work in other works.
- power electronics
- magnetic field
ASJC Scopus subject areas
FingerprintDive into the research topics of 'Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology'. Together they form a unique fingerprint.
- Centre for E-Mobility and Clean Growth - Professor in Power Semiconductor Applications
Person: Teaching and Research