Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology

Petar Igic, Nebojsa Jankovic, Jon Evans, Matthew Elwin, Stephen Batcup, Soroush Faramehr

Research output: Contribution to journalArticle

4 Citations (Scopus)
42 Downloads (Pure)

Abstract

This letter presents first-ever fabricated GaN split-current magnetic sensor device. Device operation and key manufacturing steps are also presented. The measured relative current sensitivity is constant at 14 % T -1 for wide mT range of the magnetic field. Constant sensitivity of a fabricated sensor can be attributed to device's 2DEG nature, i.e., its high electron concentration and mobility, and very small layer thickness.
Original languageEnglish
Article number5
Pages (from-to)746 - 748
Number of pages3
JournalIEEE Electron Device Letters
Volume39
Issue number5
Early online date15 Mar 2018
DOIs
Publication statusPublished - May 2018
Externally publishedYes

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Keywords

  • Sensor
  • power electronics
  • GaN
  • magnetic field

ASJC Scopus subject areas

  • Engineering(all)

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