This letter presents first-ever fabricated GaN split-current magnetic sensor device. Device operation and key manufacturing steps are also presented. The measured relative current sensitivity is constant at 14 % T -1 for wide mT range of the magnetic field. Constant sensitivity of a fabricated sensor can be attributed to device's 2DEG nature, i.e., its high electron concentration and mobility, and very small layer thickness.
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- power electronics
- magnetic field
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Igic, P., Jankovic, N., Evans, J., Elwin, M., Batcup, S., & Faramehr, S. (2018). Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology. IEEE Electron Device Letters, 39(5), 746 - 748. . https://doi.org/10.1109/LED.2018.2816164