Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology

Petar Igic; Nebojsa Jankovic; Jon Evans; Matthew Elwin; Stephen Batcup; Soroush Faramehr

doi:10.1109/LED.2018.2816164

Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology

Petar Igic, Nebojsa Jankovic, Jon Evans, Matthew Elwin, Stephen Batcup, Soroush Faramehr

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

154 Downloads (Pure)

Abstract

This letter presents first-ever fabricated GaN split-current magnetic sensor device. Device operation and key manufacturing steps are also presented. The measured relative current sensitivity is constant at 14 % T -1 for wide mT range of the magnetic field. Constant sensitivity of a fabricated sensor can be attributed to device's 2DEG nature, i.e., its high electron concentration and mobility, and very small layer thickness.

Original language	English
Article number	5
Pages (from-to)	746 - 748
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	39
Issue number	5
Early online date	15 Mar 2018
DOIs	https://doi.org/10.1109/LED.2018.2816164
Publication status	Published - May 2018
Externally published	Yes

Bibliographical note

© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must
be obtained for all other uses, in any current or future media, including
reprinting/republishing this material for advertising or promotional purposes,
creating new collective works, for resale or redistribution to servers or lists, or
reuse of any copyrighted component of this work in other works.

Keywords

Sensor
power electronics
GaN
magnetic field

ASJC Scopus subject areas

Engineering(all)

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10.1109/LED.2018.2816164

Post-PrintAccepted author manuscript, 1.92 MB

Petar Igic
- Centre for E-Mobility and Clean Growth - Professor in Power Semiconductor Applications
Person: Teaching and Research

Cite this

@article{875c32d3cca442288786028e1024a224,

title = "Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology",

abstract = "This letter presents first-ever fabricated GaN split-current magnetic sensor device. Device operation and key manufacturing steps are also presented. The measured relative current sensitivity is constant at 14 % T -1 for wide mT range of the magnetic field. Constant sensitivity of a fabricated sensor can be attributed to device's 2DEG nature, i.e., its high electron concentration and mobility, and very small layer thickness.",

keywords = "Sensor, power electronics, GaN, magnetic field",

author = "Petar Igic and Nebojsa Jankovic and Jon Evans and Matthew Elwin and Stephen Batcup and Soroush Faramehr",

note = "{\textcopyright} 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.",

year = "2018",

month = may,

doi = "10.1109/LED.2018.2816164",

language = "English",

volume = "39",

pages = "746 -- 748",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers",

number = "5",

}

TY - JOUR

T1 - Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology

AU - Igic, Petar

AU - Jankovic, Nebojsa

AU - Evans, Jon

AU - Elwin, Matthew

AU - Batcup, Stephen

AU - Faramehr, Soroush

N1 - © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

PY - 2018/5

Y1 - 2018/5

N2 - This letter presents first-ever fabricated GaN split-current magnetic sensor device. Device operation and key manufacturing steps are also presented. The measured relative current sensitivity is constant at 14 % T -1 for wide mT range of the magnetic field. Constant sensitivity of a fabricated sensor can be attributed to device's 2DEG nature, i.e., its high electron concentration and mobility, and very small layer thickness.

AB - This letter presents first-ever fabricated GaN split-current magnetic sensor device. Device operation and key manufacturing steps are also presented. The measured relative current sensitivity is constant at 14 % T -1 for wide mT range of the magnetic field. Constant sensitivity of a fabricated sensor can be attributed to device's 2DEG nature, i.e., its high electron concentration and mobility, and very small layer thickness.

KW - Sensor

KW - power electronics

KW - GaN

KW - magnetic field

U2 - 10.1109/LED.2018.2816164

DO - 10.1109/LED.2018.2816164

M3 - Article

SN - 0741-3106

VL - 39

SP - 746

EP - 748

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

M1 - 5

ER -

Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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Petar Igic

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