Drift-diffusion and hydrodynamic modeling of current collapse in GaN HEMTs for RF power application

Research output: Contribution to journalArticle

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Abstract

Current collapse due to the trapping/de-trapping of the carriers at the surface and in the bulk of a 0.25 µm gate length AlGaN/GaN high electron mobility transistor is investigated using 2d technology computer aided design transient simulations. Gate and drain pulse techniques are used to study the dynamic picture of trapping and de-trapping of carriers within drift-diffusion and hydrodynamic transport models. In addition, coupled electrical and thermal simulations are performed to model the energy exchange of the carriers with the lattice and to predict electron temperature in the channel. It is found that current degradation upon electrical stress is due to two different types of traps, donor-like traps and acceptor-like traps, respectively. The collapse next to 5% and 75% was observed for bulk and surface traps, respectively. The combined effect of surface and bulk traps on current transient characteristics has been investigated and simulations are in very good qualitative agreement with the experimental observations.
Original languageEnglish
Article number025007
JournalSemiconductor Science and Technology
Volume29
Issue number2
DOIs
Publication statusPublished - 17 Jan 2014

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High electron mobility transistors
high electron mobility transistors
Hydrodynamics
hydrodynamics
traps
trapping
Electron temperature
Computer aided design
thermal simulation
simulation
Degradation
computer aided design
energy transfer
electron energy
degradation
pulses

Bibliographical note

This is an author-created, un-copyedited version of an article accepted for publication/published in Semiconductor Science and Technology, IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at 10.1088/0268-1242/29/2/025007

Copyright © and Moral Rights are retained by the author(s) and/ or other copyright owners. A copy can be downloaded for personal non-commercial research or study, without prior permission or charge. This item cannot be reproduced or quoted extensively from without first obtaining permission in writing from the copyright holder(s). The content must not be changed in any way or sold commercially in any format or medium without the formal permission of the copyright holders.

Cite this

Drift-diffusion and hydrodynamic modeling of current collapse in GaN HEMTs for RF power application. / Faramehr, Soroush; Kalna, Karol; Igic, Petar.

In: Semiconductor Science and Technology, Vol. 29, No. 2, 025007, 17.01.2014.

Research output: Contribution to journalArticle

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