Drift-diffusion and hydrodynamic modeling of current collapse in GaN HEMTs for RF power application

Soroush Faramehr; Karol Kalna; Petar Igic

doi:10.1088/0268-1242/29/2/025007

Drift-diffusion and hydrodynamic modeling of current collapse in GaN HEMTs for RF power application

Soroush Faramehr, Karol Kalna, Petar Igic

Swansea University

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39 Citations (Scopus)

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Abstract

Current collapse due to the trapping/de-trapping of the carriers at the surface and in the bulk of a 0.25 µm gate length AlGaN/GaN high electron mobility transistor is investigated using 2d technology computer aided design transient simulations. Gate and drain pulse techniques are used to study the dynamic picture of trapping and de-trapping of carriers within drift-diffusion and hydrodynamic transport models. In addition, coupled electrical and thermal simulations are performed to model the energy exchange of the carriers with the lattice and to predict electron temperature in the channel. It is found that current degradation upon electrical stress is due to two different types of traps, donor-like traps and acceptor-like traps, respectively. The collapse next to 5% and 75% was observed for bulk and surface traps, respectively. The combined effect of surface and bulk traps on current transient characteristics has been investigated and simulations are in very good qualitative agreement with the experimental observations.

Original language	English
Article number	025007
Journal	Semiconductor Science and Technology
Volume	29
Issue number	2
DOIs	https://doi.org/10.1088/0268-1242/29/2/025007
Publication status	Published - 17 Jan 2014

Bibliographical note

This is an author-created, un-copyedited version of an article accepted for publication/published in Semiconductor Science and Technology, IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at 10.1088/0268-1242/29/2/025007

Copyright © and Moral Rights are retained by the author(s) and/ or other copyright owners. A copy can be downloaded for personal non-commercial research or study, without prior permission or charge. This item cannot be reproduced or quoted extensively from without first obtaining permission in writing from the copyright holder(s). The content must not be changed in any way or sold commercially in any format or medium without the formal permission of the copyright holders.

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10.1088/0268-1242/29/2/025007

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Soroush Faramehr
- Centre for E-Mobility and Clean Growth - Associate Professor (Research)
Person: Teaching and Research

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abstract = "Current collapse due to the trapping/de-trapping of the carriers at the surface and in the bulk of a 0.25 µm gate length AlGaN/GaN high electron mobility transistor is investigated using 2d technology computer aided design transient simulations. Gate and drain pulse techniques are used to study the dynamic picture of trapping and de-trapping of carriers within drift-diffusion and hydrodynamic transport models. In addition, coupled electrical and thermal simulations are performed to model the energy exchange of the carriers with the lattice and to predict electron temperature in the channel. It is found that current degradation upon electrical stress is due to two different types of traps, donor-like traps and acceptor-like traps, respectively. The collapse next to 5% and 75% was observed for bulk and surface traps, respectively. The combined effect of surface and bulk traps on current transient characteristics has been investigated and simulations are in very good qualitative agreement with the experimental observations.",

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N2 - Current collapse due to the trapping/de-trapping of the carriers at the surface and in the bulk of a 0.25 µm gate length AlGaN/GaN high electron mobility transistor is investigated using 2d technology computer aided design transient simulations. Gate and drain pulse techniques are used to study the dynamic picture of trapping and de-trapping of carriers within drift-diffusion and hydrodynamic transport models. In addition, coupled electrical and thermal simulations are performed to model the energy exchange of the carriers with the lattice and to predict electron temperature in the channel. It is found that current degradation upon electrical stress is due to two different types of traps, donor-like traps and acceptor-like traps, respectively. The collapse next to 5% and 75% was observed for bulk and surface traps, respectively. The combined effect of surface and bulk traps on current transient characteristics has been investigated and simulations are in very good qualitative agreement with the experimental observations.

AB - Current collapse due to the trapping/de-trapping of the carriers at the surface and in the bulk of a 0.25 µm gate length AlGaN/GaN high electron mobility transistor is investigated using 2d technology computer aided design transient simulations. Gate and drain pulse techniques are used to study the dynamic picture of trapping and de-trapping of carriers within drift-diffusion and hydrodynamic transport models. In addition, coupled electrical and thermal simulations are performed to model the energy exchange of the carriers with the lattice and to predict electron temperature in the channel. It is found that current degradation upon electrical stress is due to two different types of traps, donor-like traps and acceptor-like traps, respectively. The collapse next to 5% and 75% was observed for bulk and surface traps, respectively. The combined effect of surface and bulk traps on current transient characteristics has been investigated and simulations are in very good qualitative agreement with the experimental observations.

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Drift-diffusion and hydrodynamic modeling of current collapse in GaN HEMTs for RF power application

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