Diffusion of n-type dopants in germanium

A. Chroneos, H. Bracht

Research output: Contribution to journalArticle

108 Citations (Scopus)
13 Downloads (Pure)

Abstract

Germanium is being actively considered by the semiconductor community as a mainstream material for nanoelectronic applications. Germanium has advantageous materials properties; however, its dopant-defect interactions are less understood as compared to the mainstream material, silicon. The understanding of self- and dopant diffusion is essential to form well defined doped regions. Although p-type dopants such as boron exhibit limited diffusion, n-type dopants such as phosphorous, arsenic, and antimony diffuse quickly via vacancy-mediated diffusion mechanisms. In the present review, we mainly focus on the impact of intrinsic defects on the diffusion mechanisms of donor atoms and point defect engineering strategies to restrain donor atom diffusion and to enhance their electrical activation
Original languageEnglish
JournalApplied Physics Reviews
Volume1
Issue numberArticle number 011301
Early online date2 Jan 2014
DOIs
Publication statusPublished - Mar 2014

Fingerprint

germanium
defects
antimony
arsenic
point defects
atoms
boron
engineering
activation
silicon
interactions

Bibliographical note

Copyright 2014 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Chroneos, A. and Bracht, H. (2014) Diffusion of n-type dopants in germanium. Applied Physics Reviews , volume 1 (Article number 011301) and may be found at http://scitation.aip.org/content/aip/journal/apr2/1/1/10.1063/1.4838215 .

Cite this

Diffusion of n-type dopants in germanium. / Chroneos, A.; Bracht, H.

In: Applied Physics Reviews, Vol. 1, No. Article number 011301, 03.2014.

Research output: Contribution to journalArticle

Chroneos, A. ; Bracht, H. / Diffusion of n-type dopants in germanium. In: Applied Physics Reviews. 2014 ; Vol. 1, No. Article number 011301.
@article{a83c90f97c4d420cbecd64ec53e5f488,
title = "Diffusion of n-type dopants in germanium",
abstract = "Germanium is being actively considered by the semiconductor community as a mainstream material for nanoelectronic applications. Germanium has advantageous materials properties; however, its dopant-defect interactions are less understood as compared to the mainstream material, silicon. The understanding of self- and dopant diffusion is essential to form well defined doped regions. Although p-type dopants such as boron exhibit limited diffusion, n-type dopants such as phosphorous, arsenic, and antimony diffuse quickly via vacancy-mediated diffusion mechanisms. In the present review, we mainly focus on the impact of intrinsic defects on the diffusion mechanisms of donor atoms and point defect engineering strategies to restrain donor atom diffusion and to enhance their electrical activation",
author = "A. Chroneos and H. Bracht",
note = "Copyright 2014 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Chroneos, A. and Bracht, H. (2014) Diffusion of n-type dopants in germanium. Applied Physics Reviews , volume 1 (Article number 011301) and may be found at http://scitation.aip.org/content/aip/journal/apr2/1/1/10.1063/1.4838215 .",
year = "2014",
month = "3",
doi = "10.1063/1.4838215",
language = "English",
volume = "1",
journal = "Applied Physics Reviews",
issn = "1931-9401",
publisher = "AIP Publishing",
number = "Article number 011301",

}

TY - JOUR

T1 - Diffusion of n-type dopants in germanium

AU - Chroneos, A.

AU - Bracht, H.

N1 - Copyright 2014 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Chroneos, A. and Bracht, H. (2014) Diffusion of n-type dopants in germanium. Applied Physics Reviews , volume 1 (Article number 011301) and may be found at http://scitation.aip.org/content/aip/journal/apr2/1/1/10.1063/1.4838215 .

PY - 2014/3

Y1 - 2014/3

N2 - Germanium is being actively considered by the semiconductor community as a mainstream material for nanoelectronic applications. Germanium has advantageous materials properties; however, its dopant-defect interactions are less understood as compared to the mainstream material, silicon. The understanding of self- and dopant diffusion is essential to form well defined doped regions. Although p-type dopants such as boron exhibit limited diffusion, n-type dopants such as phosphorous, arsenic, and antimony diffuse quickly via vacancy-mediated diffusion mechanisms. In the present review, we mainly focus on the impact of intrinsic defects on the diffusion mechanisms of donor atoms and point defect engineering strategies to restrain donor atom diffusion and to enhance their electrical activation

AB - Germanium is being actively considered by the semiconductor community as a mainstream material for nanoelectronic applications. Germanium has advantageous materials properties; however, its dopant-defect interactions are less understood as compared to the mainstream material, silicon. The understanding of self- and dopant diffusion is essential to form well defined doped regions. Although p-type dopants such as boron exhibit limited diffusion, n-type dopants such as phosphorous, arsenic, and antimony diffuse quickly via vacancy-mediated diffusion mechanisms. In the present review, we mainly focus on the impact of intrinsic defects on the diffusion mechanisms of donor atoms and point defect engineering strategies to restrain donor atom diffusion and to enhance their electrical activation

U2 - 10.1063/1.4838215

DO - 10.1063/1.4838215

M3 - Article

VL - 1

JO - Applied Physics Reviews

JF - Applied Physics Reviews

SN - 1931-9401

IS - Article number 011301

ER -