Diffusion and Dopant Activation in Germanium: Insights from Recent Experimental and Theoretical Results

E.N. Sgourou, Yerassimos Panayiotatos, R. V. Vovk, Navaratnarajah Kuganathan, Alexander Chroneos

    Research output: Contribution to journalReview articlepeer-review

    9 Citations (Scopus)
    14 Downloads (Pure)

    Abstract

    Germanium is an important mainstream material for many nanoelectronic and sensor applications. The understanding of diffusion at an atomic level is important for fundamental and technological reasons. In the present review, we focus on the description of recent studies concerning n-type dopants, isovalent atoms, p-type dopants, and metallic and oxygen diffusion in germanium. Defect engineering strategies considered by the community over the past decade are discussed in view of their potential application to other systems.
    Original languageEnglish
    Article number2454
    Number of pages14
    JournalApplied Sciences
    Volume9
    Issue number12
    DOIs
    Publication statusPublished - 15 Jun 2019

    Bibliographical note

    © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution
    (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

    Keywords

    • Defect engineering
    • Diffusion
    • Dopants
    • Electronic materials
    • Germanium

    ASJC Scopus subject areas

    • Materials Science(all)
    • Instrumentation
    • Engineering(all)
    • Process Chemistry and Technology
    • Computer Science Applications
    • Fluid Flow and Transfer Processes

    Fingerprint

    Dive into the research topics of 'Diffusion and Dopant Activation in Germanium: Insights from Recent Experimental and Theoretical Results'. Together they form a unique fingerprint.

    Cite this