Diffusion and Dopant Activation in Germanium: Insights from Recent Experimental and Theoretical Results

E.N. Sgourou, Yerassimos Panayiotatos, R. V. Vovk, Navaratnarajah Kuganathan, Alexander Chroneos

Research output: Contribution to journalReview article

3 Citations (Scopus)
5 Downloads (Pure)

Abstract

Germanium is an important mainstream material for many nanoelectronic and sensor applications. The understanding of diffusion at an atomic level is important for fundamental and technological reasons. In the present review, we focus on the description of recent studies concerning n-type dopants, isovalent atoms, p-type dopants, and metallic and oxygen diffusion in germanium. Defect engineering strategies considered by the community over the past decade are discussed in view of their potential application to other systems.
Original languageEnglish
Article number2454
Number of pages14
JournalApplied Sciences
Volume9
Issue number12
DOIs
Publication statusPublished - 15 Jun 2019

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Bibliographical note

© 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution
(CC BY) license (http://creativecommons.org/licenses/by/4.0/).

Keywords

  • Defect engineering
  • Diffusion
  • Dopants
  • Electronic materials
  • Germanium

ASJC Scopus subject areas

  • Materials Science(all)
  • Instrumentation
  • Engineering(all)
  • Process Chemistry and Technology
  • Computer Science Applications
  • Fluid Flow and Transfer Processes

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