Development of Vertical GaN FETs for Bi-directional Battery Charging

Anastasios Arvanitopoulos, Petar Igic, Robert Harper, Jon Evans, Matthew Elwin, Soroush Faramehr

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    In this paper, a vertical device structure and its process flow are proposed for fabrication of Gallium Nitride Trench Field Effect Transistors (GaNTT). A TCAD model is developed to capture effect of bulk and interface traps on the electrical performance of fully vertical Gallium Nitride devices on a Silicon Carbide substrate (GaN-on-SiC). The simulation results show a promising specific on-resistance of R sp,on = 1.4 mΩ . cm 2 and a blocking voltage of BV = 540V at V GS =0V for a GaN drift thickness of 4 μm.
    Original languageEnglish
    Title of host publicationProceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021
    Number of pages6
    ISBN (Electronic)978-1-7281-6344-4
    ISBN (Print)978-1-7281-6345-1
    Publication statusPublished - 24 May 2021
    Event2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia) - Virtual event, Singapore
    Duration: 24 May 202127 May 2021
    Conference number: 12

    Publication series

    NameInternational Conference on Power Electronics
    ISSN (Print)2150-6078
    ISSN (Electronic)2150-6086


    Conference2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia)
    Internet address

    Bibliographical note

    © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.


    • FETs
    • GaN
    • TCAD
    • Trench

    ASJC Scopus subject areas

    • Control and Optimization
    • Energy Engineering and Power Technology
    • Electrical and Electronic Engineering
    • Mechanical Engineering


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