Abstract
In this paper, a vertical device structure and its process flow are proposed for fabrication of Gallium Nitride Trench Field Effect Transistors (GaNTT). A TCAD model is developed to capture effect of bulk and interface traps on the electrical performance of fully vertical Gallium Nitride devices on a Silicon Carbide substrate (GaN-on-SiC). The simulation results show a promising specific on-resistance of R sp,on = 1.4 mΩ . cm 2 and a blocking voltage of BV = 540V at V GS =0V for a GaN drift thickness of 4 μm.
Original language | English |
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Title of host publication | Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021 |
Publisher | IEEE |
Pages | 1-6 |
Number of pages | 6 |
ISBN (Electronic) | 978-1-7281-6344-4 |
ISBN (Print) | 978-1-7281-6345-1 |
DOIs | |
Publication status | Published - 24 May 2021 |
Event | 2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia) - Virtual event, Singapore Duration: 24 May 2021 → 27 May 2021 Conference number: 12 https://ecceasia2021.com/ |
Publication series
Name | International Conference on Power Electronics |
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ISSN (Print) | 2150-6078 |
ISSN (Electronic) | 2150-6086 |
Conference
Conference | 2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia) |
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Country/Territory | Singapore |
Period | 24/05/21 → 27/05/21 |
Internet address |
Bibliographical note
© 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.Keywords
- FETs
- GaN
- TCAD
- Trench
ASJC Scopus subject areas
- Control and Optimization
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering
- Mechanical Engineering