Development of Vertical GaN FETs for Bi-directional Battery Charging

Anastasios Arvanitopoulos; Petar Igic; Robert Harper; Jon Evans; Matthew Elwin; Soroush Faramehr

doi:10.1109/ECCE-Asia49820.2021.9479035

Development of Vertical GaN FETs for Bi-directional Battery Charging

Anastasios Arvanitopoulos, Petar Igic, Robert Harper, Jon Evans, Matthew Elwin, Soroush Faramehr

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

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Abstract

In this paper, a vertical device structure and its process flow are proposed for fabrication of Gallium Nitride Trench Field Effect Transistors (GaNTT). A TCAD model is developed to capture effect of bulk and interface traps on the electrical performance of fully vertical Gallium Nitride devices on a Silicon Carbide substrate (GaN-on-SiC). The simulation results show a promising specific on-resistance of R sp,on = 1.4 mΩ . cm 2 and a blocking voltage of BV = 540V at V GS =0V for a GaN drift thickness of 4 μm.

Original language	English
Title of host publication	Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021
Publisher	IEEE
Pages	1-6
Number of pages	6
ISBN (Electronic)	978-1-7281-6344-4
ISBN (Print)	978-1-7281-6345-1
DOIs	https://doi.org/10.1109/ECCE-Asia49820.2021.9479035
Publication status	Published - 24 May 2021
Event	2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia) - Virtual event, Singapore Duration: 24 May 2021 → 27 May 2021 Conference number: 12 https://ecceasia2021.com/

Publication series

Name	International Conference on Power Electronics
ISSN (Print)	2150-6078
ISSN (Electronic)	2150-6086

Conference

Conference	2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia)
Country/Territory	Singapore
Period	24/05/21 → 27/05/21
Internet address	https://ecceasia2021.com/

Bibliographical note

© 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Keywords

FETs
GaN
TCAD
Trench

ASJC Scopus subject areas

Control and Optimization
Energy Engineering and Power Technology
Electrical and Electronic Engineering
Mechanical Engineering

Access to Document

10.1109/ECCE-Asia49820.2021.9479035

Post-PrintAccepted author manuscript, 1.49 MB

Cite this

Arvanitopoulos, A., Igic, P., Harper, R., Evans, J., Elwin, M., & Faramehr, S. (2021). Development of Vertical GaN FETs for Bi-directional Battery Charging. In Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021 (pp. 1-6). [9479035] (International Conference on Power Electronics). IEEE. https://doi.org/10.1109/ECCE-Asia49820.2021.9479035

Development of Vertical GaN FETs for Bi-directional Battery Charging. / Arvanitopoulos, Anastasios; Igic, Petar; Harper, Robert; Evans, Jon; Elwin, Matthew; Faramehr, Soroush.

Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021. IEEE, 2021. p. 1-6 9479035 (International Conference on Power Electronics).

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

Arvanitopoulos, A, Igic, P, Harper, R, Evans, J, Elwin, M & Faramehr, S 2021, Development of Vertical GaN FETs for Bi-directional Battery Charging. in Proceedings of the Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021., 9479035, International Conference on Power Electronics, IEEE, pp. 1-6, 2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia), Singapore, 24/05/21. https://doi.org/10.1109/ECCE-Asia49820.2021.9479035

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abstract = "In this paper, a vertical device structure and its process flow are proposed for fabrication of Gallium Nitride Trench Field Effect Transistors (GaNTT). A TCAD model is developed to capture effect of bulk and interface traps on the electrical performance of fully vertical Gallium Nitride devices on a Silicon Carbide substrate (GaN-on-SiC). The simulation results show a promising specific on-resistance of R sp,on = 1.4 mΩ . cm 2 and a blocking voltage of BV = 540V at V GS =0V for a GaN drift thickness of 4 μm.",

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AB - In this paper, a vertical device structure and its process flow are proposed for fabrication of Gallium Nitride Trench Field Effect Transistors (GaNTT). A TCAD model is developed to capture effect of bulk and interface traps on the electrical performance of fully vertical Gallium Nitride devices on a Silicon Carbide substrate (GaN-on-SiC). The simulation results show a promising specific on-resistance of R sp,on = 1.4 mΩ . cm 2 and a blocking voltage of BV = 540V at V GS =0V for a GaN drift thickness of 4 μm.

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Development of Vertical GaN FETs for Bi-directional Battery Charging

Abstract

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Bibliographical note

Keywords

ASJC Scopus subject areas

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