Abstract
Gallium nitride (GaN) magnetic high electron mobility transistors (MagHEMTs) with different gate lengths intended for integration with magnetic flux concentrator for galvanic isolation are presented. Detailed discussions on the physical mechanisms behind the sensitivity change at room temperature with respect to gate geometry are given. The relative sensitivity of dual-drain GaN MagHEMTs with a device length of L = 65 μm and a width of W = 20 μm is measured at the highest of S = 17.21%/T and the lowest of S = 7.69%/T at VGS= -2 V and VGS= 0 V, respectively. In addition, a novel spiral magnetic flux concentrator with the conversion factor of up to FC= 96 mT/A is designed for improving the performance of the optimized MagHEMTs in ICs. It is predicted that a spiral configuration is a necessity to enhance the conversion factor for a long MagHEMT.
Original language | English |
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Pages (from-to) | 4367 - 4372 |
Number of pages | 6 |
Journal | IEEE Transactions on Electron Devices |
Volume | 66 |
Issue number | 10 |
Early online date | 30 Aug 2019 |
DOIs | |
Publication status | Published - Oct 2019 |
Bibliographical note
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Keywords
- Gallium nitride
- Logic gates
- Magnetic sensors
- Sensitivity
- Temperature measurement
- Current measurement
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Soroush Faramehr
- Centre for E-Mobility and Clean Growth - Associate Professor (Research)
Person: Teaching and Research