Development of GaN Transducer and On-Chip Concentrator for Galvanic Current Sensing

Soroush Faramehr, Nagaditya Poluri, Petar Igic, Nebojsa Jankovic, Maria Merlyne De Souza

Research output: Contribution to journalArticle

5 Downloads (Pure)

Abstract

Gallium nitride (GaN) magnetic high electron mobility transistors (MagHEMTs) with different gate lengths intended for integration with magnetic flux concentrator for galvanic isolation are presented. Detailed discussions on the physical mechanisms behind the sensitivity change at room temperature with respect to gate geometry are given. The relative sensitivity of dual-drain GaN MagHEMTs with a device length of L = 65 μm and a width of W = 20 μm is measured at the highest of S = 17.21%/T and the lowest of S = 7.69%/T at VGS= -2 V and VGS= 0 V, respectively. In addition, a novel spiral magnetic flux concentrator with the conversion factor of up to FC= 96 mT/A is designed for improving the performance of the optimized MagHEMTs in ICs. It is predicted that a spiral configuration is a necessity to enhance the conversion factor for a long MagHEMT.
Original languageEnglish
Pages (from-to)(In-press)
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume(In-press)
DOIs
Publication statusE-pub ahead of print - 30 Aug 2019

Fingerprint

Gallium nitride
High electron mobility transistors
Transducers
Magnetic flux
Geometry
gallium nitride
Temperature

Bibliographical note

© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Copyright © and Moral Rights are retained by the author(s) and/ or other copyright owners. A copy can be downloaded for personal non-commercial research or study, without prior permission or charge. This item cannot be reproduced or quoted extensively from without first obtaining permission in writing from the copyright holder(s). The content must not be changed in any way or sold commercially in any format or medium without the formal permission of the copyright holders.

Keywords

  • Gallium nitride
  • Logic gates
  • Magnetic sensors
  • Sensitivity
  • Temperature measurement
  • Current measurement

Cite this

Development of GaN Transducer and On-Chip Concentrator for Galvanic Current Sensing. / Faramehr, Soroush; Poluri, Nagaditya; Igic, Petar; Jankovic, Nebojsa; De Souza, Maria Merlyne.

In: IEEE Transactions on Electron Devices, Vol. (In-press), 30.08.2019, p. (In-press).

Research output: Contribution to journalArticle

Faramehr, Soroush ; Poluri, Nagaditya ; Igic, Petar ; Jankovic, Nebojsa ; De Souza, Maria Merlyne. / Development of GaN Transducer and On-Chip Concentrator for Galvanic Current Sensing. In: IEEE Transactions on Electron Devices. 2019 ; Vol. (In-press). pp. (In-press).
@article{59beadccd37f428387eeef6be7ce0ad4,
title = "Development of GaN Transducer and On-Chip Concentrator for Galvanic Current Sensing",
abstract = "Gallium nitride (GaN) magnetic high electron mobility transistors (MagHEMTs) with different gate lengths intended for integration with magnetic flux concentrator for galvanic isolation are presented. Detailed discussions on the physical mechanisms behind the sensitivity change at room temperature with respect to gate geometry are given. The relative sensitivity of dual-drain GaN MagHEMTs with a device length of L = 65 μm and a width of W = 20 μm is measured at the highest of S = 17.21{\%}/T and the lowest of S = 7.69{\%}/T at VGS= -2 V and VGS= 0 V, respectively. In addition, a novel spiral magnetic flux concentrator with the conversion factor of up to FC= 96 mT/A is designed for improving the performance of the optimized MagHEMTs in ICs. It is predicted that a spiral configuration is a necessity to enhance the conversion factor for a long MagHEMT.",
keywords = "Gallium nitride, Logic gates, Magnetic sensors, Sensitivity, Temperature measurement, Current measurement",
author = "Soroush Faramehr and Nagaditya Poluri and Petar Igic and Nebojsa Jankovic and {De Souza}, {Maria Merlyne}",
note = "{\circledC} 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. Copyright {\circledC} and Moral Rights are retained by the author(s) and/ or other copyright owners. A copy can be downloaded for personal non-commercial research or study, without prior permission or charge. This item cannot be reproduced or quoted extensively from without first obtaining permission in writing from the copyright holder(s). The content must not be changed in any way or sold commercially in any format or medium without the formal permission of the copyright holders.",
year = "2019",
month = "8",
day = "30",
doi = "10.1109/TED.2019.2936687",
language = "English",
volume = "(In-press)",
pages = "(In--press)",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers",

}

TY - JOUR

T1 - Development of GaN Transducer and On-Chip Concentrator for Galvanic Current Sensing

AU - Faramehr, Soroush

AU - Poluri, Nagaditya

AU - Igic, Petar

AU - Jankovic, Nebojsa

AU - De Souza, Maria Merlyne

N1 - © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. Copyright © and Moral Rights are retained by the author(s) and/ or other copyright owners. A copy can be downloaded for personal non-commercial research or study, without prior permission or charge. This item cannot be reproduced or quoted extensively from without first obtaining permission in writing from the copyright holder(s). The content must not be changed in any way or sold commercially in any format or medium without the formal permission of the copyright holders.

PY - 2019/8/30

Y1 - 2019/8/30

N2 - Gallium nitride (GaN) magnetic high electron mobility transistors (MagHEMTs) with different gate lengths intended for integration with magnetic flux concentrator for galvanic isolation are presented. Detailed discussions on the physical mechanisms behind the sensitivity change at room temperature with respect to gate geometry are given. The relative sensitivity of dual-drain GaN MagHEMTs with a device length of L = 65 μm and a width of W = 20 μm is measured at the highest of S = 17.21%/T and the lowest of S = 7.69%/T at VGS= -2 V and VGS= 0 V, respectively. In addition, a novel spiral magnetic flux concentrator with the conversion factor of up to FC= 96 mT/A is designed for improving the performance of the optimized MagHEMTs in ICs. It is predicted that a spiral configuration is a necessity to enhance the conversion factor for a long MagHEMT.

AB - Gallium nitride (GaN) magnetic high electron mobility transistors (MagHEMTs) with different gate lengths intended for integration with magnetic flux concentrator for galvanic isolation are presented. Detailed discussions on the physical mechanisms behind the sensitivity change at room temperature with respect to gate geometry are given. The relative sensitivity of dual-drain GaN MagHEMTs with a device length of L = 65 μm and a width of W = 20 μm is measured at the highest of S = 17.21%/T and the lowest of S = 7.69%/T at VGS= -2 V and VGS= 0 V, respectively. In addition, a novel spiral magnetic flux concentrator with the conversion factor of up to FC= 96 mT/A is designed for improving the performance of the optimized MagHEMTs in ICs. It is predicted that a spiral configuration is a necessity to enhance the conversion factor for a long MagHEMT.

KW - Gallium nitride

KW - Logic gates

KW - Magnetic sensors

KW - Sensitivity

KW - Temperature measurement

KW - Current measurement

U2 - 10.1109/TED.2019.2936687

DO - 10.1109/TED.2019.2936687

M3 - Article

VL - (In-press)

SP - (In-press)

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

ER -