Gallium nitride (GaN) magnetic high electron mobility transistors (MagHEMTs) with different gate lengths intended for integration with magnetic flux concentrator for galvanic isolation are presented. Detailed discussions on the physical mechanisms behind the sensitivity change at room temperature with respect to gate geometry are given. The relative sensitivity of dual-drain GaN MagHEMTs with a device length of L = 65 μm and a width of W = 20 μm is measured at the highest of S = 17.21%/T and the lowest of S = 7.69%/T at VGS= -2 V and VGS= 0 V, respectively. In addition, a novel spiral magnetic flux concentrator with the conversion factor of up to FC= 96 mT/A is designed for improving the performance of the optimized MagHEMTs in ICs. It is predicted that a spiral configuration is a necessity to enhance the conversion factor for a long MagHEMT.
Bibliographical note© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Copyright © and Moral Rights are retained by the author(s) and/ or other copyright owners. A copy can be downloaded for personal non-commercial research or study, without prior permission or charge. This item cannot be reproduced or quoted extensively from without first obtaining permission in writing from the copyright holder(s). The content must not be changed in any way or sold commercially in any format or medium without the formal permission of the copyright holders.
- Gallium nitride
- Logic gates
- Magnetic sensors
- Temperature measurement
- Current measurement