Design, fabrication and application of GaN-based micro-LED arrays with individual addressing by n-electrodes

Enyuan Xie; Mark Stonehouse; Ricardo Ferreira; Jonathan J. D.  McKendry; Johannes  Herrnsdorf; Xiangyu  He; Sujan Rajbhandari; Hyunchae  Chun; Aravind V.N.  Jalajakumari; Oscar Almer; Grahame  Faulkner; Ian M.  Watson; Erdan  Gu; Robert  Henderson; Dominic  O'Brien; Martin D.  Dawson

doi:10.1109/JPHOT.2017.2768478

Design, fabrication and application of GaN-based micro-LED arrays with individual addressing by n-electrodes

Enyuan Xie, Mark Stonehouse, Ricardo Ferreira, Jonathan J. D. McKendry, Johannes Herrnsdorf, Xiangyu He, Sujan Rajbhandari, Hyunchae Chun, Aravind V.N. Jalajakumari, Oscar Almer, Grahame Faulkner, Ian M. Watson, Erdan Gu, Robert Henderson, Dominic O'Brien, Martin D. Dawson

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Abstract

We demonstrate the development, performance, and application of a GaN-based
micro-light emitting diode (µLED) array sharing a common p-electrode (anode), and with individually
addressable n-electrodes (cathodes). Compared to conventional GaN-based LED
arrays, this array design employs a reversed structure of common and individual electrodes,
which makes it innovative and compatible with n-type metal-oxide-semiconductor (NMOS)
transistor-based drivers for faster modulation. Excellent performance characteristics are illustrated
by an example array emitting at 450 nm. At a current density of 17.7 kA/cm2 in
direct-current operation, the optical power and small signal electrical-to-optical modulation
bandwidth of a single µLED element with 24 µm diameter are over 2.0 mW and 440 MHz,
respectively. The optimized fabrication process also ensures a high yield of working µLED
elements per array and excellent element-to-element uniformity of electrical/optical characteristics.
Results on visible light communication are presented as an application of an array
integrated with an NMOS driver. Data transmission at several hundred Mb/s without bit error
is achieved for single- and multiple-µLED-element operations, under an ON–OFF-keying
modulation scheme. Transmission of stepped sawtooth waveforms is also demonstrated to
confirm that the µLED elements can transmit discrete multilevel signals.

Original language	English
Article number	7907811
Number of pages	13
Journal	IEEE Photonics Journal
Volume	9
Issue number	6
DOIs	https://doi.org/10.1109/JPHOT.2017.2768478
Publication status	Published - 14 Nov 2017

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Xie, E., Stonehouse, M., Ferreira, R., McKendry, J. J. D., Herrnsdorf, J., He, X., Rajbhandari, S., Chun, H., Jalajakumari, A. V. N., Almer, O., Faulkner, G., Watson, I. M., Gu, E., Henderson, R., O'Brien, D., & Dawson, M. D. (2017). Design, fabrication and application of GaN-based micro-LED arrays with individual addressing by n-electrodes. IEEE Photonics Journal, 9(6), Article 7907811. https://doi.org/10.1109/JPHOT.2017.2768478

Xie, E, Stonehouse, M, Ferreira, R, McKendry, JJD, Herrnsdorf, J, He, X, Rajbhandari, S, Chun, H, Jalajakumari, AVN, Almer, O, Faulkner, G, Watson, IM, Gu, E, Henderson, R, O'Brien, D & Dawson, MD 2017, 'Design, fabrication and application of GaN-based micro-LED arrays with individual addressing by n-electrodes', IEEE Photonics Journal, vol. 9, no. 6, 7907811. https://doi.org/10.1109/JPHOT.2017.2768478

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title = "Design, fabrication and application of GaN-based micro-LED arrays with individual addressing by n-electrodes",

abstract = "We demonstrate the development, performance, and application of a GaN-basedmicro-light emitting diode (µLED) array sharing a common p-electrode (anode), and with individuallyaddressable n-electrodes (cathodes). Compared to conventional GaN-based LEDarrays, this array design employs a reversed structure of common and individual electrodes,which makes it innovative and compatible with n-type metal-oxide-semiconductor (NMOS)transistor-based drivers for faster modulation. Excellent performance characteristics are illustratedby an example array emitting at 450 nm. At a current density of 17.7 kA/cm2 indirect-current operation, the optical power and small signal electrical-to-optical modulationbandwidth of a single µLED element with 24 µm diameter are over 2.0 mW and 440 MHz,respectively. The optimized fabrication process also ensures a high yield of working µLEDelements per array and excellent element-to-element uniformity of electrical/optical characteristics.Results on visible light communication are presented as an application of an arrayintegrated with an NMOS driver. Data transmission at several hundred Mb/s without bit erroris achieved for single- and multiple-µLED-element operations, under an ON–OFF-keyingmodulation scheme. Transmission of stepped sawtooth waveforms is also demonstrated toconfirm that the µLED elements can transmit discrete multilevel signals.",

author = "Enyuan Xie and Mark Stonehouse and Ricardo Ferreira and McKendry, {Jonathan J. D.} and Johannes Herrnsdorf and Xiangyu He and Sujan Rajbhandari and Hyunchae Chun and Jalajakumari, {Aravind V.N.} and Oscar Almer and Grahame Faulkner and Watson, {Ian M.} and Erdan Gu and Robert Henderson and Dominic O'Brien and Dawson, {Martin D.}",

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AU - Xie, Enyuan

AU - Stonehouse, Mark

AU - Ferreira, Ricardo

AU - McKendry, Jonathan J. D.

AU - Herrnsdorf, Johannes

AU - He, Xiangyu

AU - Rajbhandari, Sujan

AU - Chun, Hyunchae

AU - Jalajakumari, Aravind V.N.

AU - Almer, Oscar

AU - Faulkner, Grahame

AU - Watson, Ian M.

AU - Gu, Erdan

AU - Henderson, Robert

AU - O'Brien, Dominic

AU - Dawson, Martin D.

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N2 - We demonstrate the development, performance, and application of a GaN-basedmicro-light emitting diode (µLED) array sharing a common p-electrode (anode), and with individuallyaddressable n-electrodes (cathodes). Compared to conventional GaN-based LEDarrays, this array design employs a reversed structure of common and individual electrodes,which makes it innovative and compatible with n-type metal-oxide-semiconductor (NMOS)transistor-based drivers for faster modulation. Excellent performance characteristics are illustratedby an example array emitting at 450 nm. At a current density of 17.7 kA/cm2 indirect-current operation, the optical power and small signal electrical-to-optical modulationbandwidth of a single µLED element with 24 µm diameter are over 2.0 mW and 440 MHz,respectively. The optimized fabrication process also ensures a high yield of working µLEDelements per array and excellent element-to-element uniformity of electrical/optical characteristics.Results on visible light communication are presented as an application of an arrayintegrated with an NMOS driver. Data transmission at several hundred Mb/s without bit erroris achieved for single- and multiple-µLED-element operations, under an ON–OFF-keyingmodulation scheme. Transmission of stepped sawtooth waveforms is also demonstrated toconfirm that the µLED elements can transmit discrete multilevel signals.

AB - We demonstrate the development, performance, and application of a GaN-basedmicro-light emitting diode (µLED) array sharing a common p-electrode (anode), and with individuallyaddressable n-electrodes (cathodes). Compared to conventional GaN-based LEDarrays, this array design employs a reversed structure of common and individual electrodes,which makes it innovative and compatible with n-type metal-oxide-semiconductor (NMOS)transistor-based drivers for faster modulation. Excellent performance characteristics are illustratedby an example array emitting at 450 nm. At a current density of 17.7 kA/cm2 indirect-current operation, the optical power and small signal electrical-to-optical modulationbandwidth of a single µLED element with 24 µm diameter are over 2.0 mW and 440 MHz,respectively. The optimized fabrication process also ensures a high yield of working µLEDelements per array and excellent element-to-element uniformity of electrical/optical characteristics.Results on visible light communication are presented as an application of an arrayintegrated with an NMOS driver. Data transmission at several hundred Mb/s without bit erroris achieved for single- and multiple-µLED-element operations, under an ON–OFF-keyingmodulation scheme. Transmission of stepped sawtooth waveforms is also demonstrated toconfirm that the µLED elements can transmit discrete multilevel signals.

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Design, fabrication and application of GaN-based micro-LED arrays with individual addressing by n-electrodes

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