Design, fabrication and application of GaN-based micro-LED arrays with individual addressing by n-electrodes

Enyuan Xie, Mark Stonehouse, Ricardo Ferreira, Jonathan J. D. McKendry, Johannes Herrnsdorf, Xiangyu He, Sujan Rajbhandari, Hyunchae Chun, Aravind V.N. Jalajakumari, Oscar Almer, Grahame Faulkner, Ian M. Watson, Erdan Gu, Robert Henderson, Dominic O'Brien, Martin D. Dawson

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)
22 Downloads (Pure)


We demonstrate the development, performance, and application of a GaN-based
micro-light emitting diode (µLED) array sharing a common p-electrode (anode), and with individually
addressable n-electrodes (cathodes). Compared to conventional GaN-based LED
arrays, this array design employs a reversed structure of common and individual electrodes,
which makes it innovative and compatible with n-type metal-oxide-semiconductor (NMOS)
transistor-based drivers for faster modulation. Excellent performance characteristics are illustrated
by an example array emitting at 450 nm. At a current density of 17.7 kA/cm2 in
direct-current operation, the optical power and small signal electrical-to-optical modulation
bandwidth of a single µLED element with 24 µm diameter are over 2.0 mW and 440 MHz,
respectively. The optimized fabrication process also ensures a high yield of working µLED
elements per array and excellent element-to-element uniformity of electrical/optical characteristics.
Results on visible light communication are presented as an application of an array
integrated with an NMOS driver. Data transmission at several hundred Mb/s without bit error
is achieved for single- and multiple-µLED-element operations, under an ON–OFF-keying
modulation scheme. Transmission of stepped sawtooth waveforms is also demonstrated to
confirm that the µLED elements can transmit discrete multilevel signals.
Original languageEnglish
Article number7907811
Number of pages13
JournalIEEE Photonics Journal
Issue number6
Publication statusPublished - 14 Nov 2017


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