Depth-dependent critical behavior in V2H

Charo del Genio, Johann Trenkler, Kevin Bassler, Peter Wochner, Dean Häffner, George Reiter, Jianming Bai, Simon Moss

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Abstract

Using X-ray diffuse scattering, we investigate the critical behavior of an order-disorder phase transition in a defective "skin-layer" of V2H. In the skin-layer, there exist walls of dislocation lines oriented normal to the surface. The density of dislocation lines within a wall decreases continuously with depth. We find that, because of this inhomogeneous distribution of defects, the transition effectively occurs at a depth-dependent local critical temperature. A depth-dependent scaling law is proposed to describe the corresponding critical ordering behavior.
Original languageEnglish
Article number184113
JournalPhysical Review B
Volume79
DOIs
Publication statusPublished - 29 May 2009

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    del Genio, C., Trenkler, J., Bassler, K., Wochner, P., Häffner, D., Reiter, G., ... Moss, S. (2009). Depth-dependent critical behavior in V2H. Physical Review B, 79, [184113]. https://doi.org/10.1103/PhysRevB.79.184113