Copper diffusion in germanium: connecting point defect parameters with bulk properties

A. Chroneos, Y. Panayiotatos, R.V. Vovk

    Research output: Contribution to journalArticle

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    Abstract

    Copper diffusion in germanium is fundamentally and technologically important as it has a very low activation energy and influences the precipitation and gettering of copper respectively. These constitute the understanding of copper’s diffusion properties in germanium over a range of temperatures and pressures important. In the present study we use the cBΩ model in which the defect Gibbs energy is proportional to the isothermal bulk modulus (B) and the mean volume per atom (Ω). The elastic and expansivity data is used in the description of the cBΩ model to derive the copper interstitial diffusion coefficient in germanium in the temperature range 827–1,176 K. The calculated results are discussed in view of the available experimental data.
    Original languageEnglish
    Pages (from-to)2693-2696
    JournalJournal of Materials Science: Materials in Electronics
    Volume26
    Issue number5
    DOIs
    Publication statusPublished - Jan 2015

    Bibliographical note

    The final publication is available at Springer via http://dx.doi.org/10.1007/s10854-015-2744-6

    Keywords

    • Optical and Electronic Materials
    • Characterization and Evaluation of Materials

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