Copper diffusion in germanium: connecting point defect parameters with bulk properties

A. Chroneos; Y. Panayiotatos; R.V. Vovk

doi:10.1007/s10854-015-2744-6

Copper diffusion in germanium: connecting point defect parameters with bulk properties

A. Chroneos, Y. Panayiotatos, R.V. Vovk

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Abstract

Copper diffusion in germanium is fundamentally and technologically important as it has a very low activation energy and influences the precipitation and gettering of copper respectively. These constitute the understanding of copper’s diffusion properties in germanium over a range of temperatures and pressures important. In the present study we use the cBΩ model in which the defect Gibbs energy is proportional to the isothermal bulk modulus (B) and the mean volume per atom (Ω). The elastic and expansivity data is used in the description of the cBΩ model to derive the copper interstitial diffusion coefficient in germanium in the temperature range 827–1,176 K. The calculated results are discussed in view of the available experimental data.

Original language	English
Pages (from-to)	2693-2696
Journal	Journal of Materials Science: Materials in Electronics
Volume	26
Issue number	5
DOIs	https://doi.org/10.1007/s10854-015-2744-6
Publication status	Published - Jan 2015

Bibliographical note

The final publication is available at Springer via http://dx.doi.org/10.1007/s10854-015-2744-6

Keywords

Optical and Electronic Materials
Characterization and Evaluation of Materials

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10.1007/s10854-015-2744-6

Copper diffusion

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title = "Copper diffusion in germanium: connecting point defect parameters with bulk properties",

abstract = "Copper diffusion in germanium is fundamentally and technologically important as it has a very low activation energy and influences the precipitation and gettering of copper respectively. These constitute the understanding of copper{\textquoteright}s diffusion properties in germanium over a range of temperatures and pressures important. In the present study we use the cBΩ model in which the defect Gibbs energy is proportional to the isothermal bulk modulus (B) and the mean volume per atom (Ω). The elastic and expansivity data is used in the description of the cBΩ model to derive the copper interstitial diffusion coefficient in germanium in the temperature range 827–1,176 K. The calculated results are discussed in view of the available experimental data. ",

keywords = "Optical and Electronic Materials, Characterization and Evaluation of Materials",

author = "A. Chroneos and Y. Panayiotatos and R.V. Vovk",

note = "The final publication is available at Springer via http://dx.doi.org/10.1007/s10854-015-2744-6",

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T1 - Copper diffusion in germanium: connecting point defect parameters with bulk properties

AU - Chroneos, A.

AU - Panayiotatos, Y.

AU - Vovk, R.V.

N1 - The final publication is available at Springer via http://dx.doi.org/10.1007/s10854-015-2744-6

PY - 2015/1

Y1 - 2015/1

N2 - Copper diffusion in germanium is fundamentally and technologically important as it has a very low activation energy and influences the precipitation and gettering of copper respectively. These constitute the understanding of copper’s diffusion properties in germanium over a range of temperatures and pressures important. In the present study we use the cBΩ model in which the defect Gibbs energy is proportional to the isothermal bulk modulus (B) and the mean volume per atom (Ω). The elastic and expansivity data is used in the description of the cBΩ model to derive the copper interstitial diffusion coefficient in germanium in the temperature range 827–1,176 K. The calculated results are discussed in view of the available experimental data.

AB - Copper diffusion in germanium is fundamentally and technologically important as it has a very low activation energy and influences the precipitation and gettering of copper respectively. These constitute the understanding of copper’s diffusion properties in germanium over a range of temperatures and pressures important. In the present study we use the cBΩ model in which the defect Gibbs energy is proportional to the isothermal bulk modulus (B) and the mean volume per atom (Ω). The elastic and expansivity data is used in the description of the cBΩ model to derive the copper interstitial diffusion coefficient in germanium in the temperature range 827–1,176 K. The calculated results are discussed in view of the available experimental data.

KW - Optical and Electronic Materials

KW - Characterization and Evaluation of Materials

U2 - 10.1007/s10854-015-2744-6

DO - 10.1007/s10854-015-2744-6

M3 - Article

SN - 0957-4522

SN - 1573-482X

VL - 26

SP - 2693

EP - 2696

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 5

ER -

Copper diffusion in germanium: connecting point defect parameters with bulk properties

Abstract

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Keywords

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