Controlling A-center concentration in silicon through isovalent doping: Mass action analysis

Stavros Christopoulos, David C. Parfitt, E. N. Sgourou, C. A. Londos, R. V. Vovk, Alexander Chroneos

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Abstract

It has been determined experimentally that doping silicon with large isovalent dopants such as tin can limit the concentration of vacancy-oxygen defects, this in turn, can be deleterious for the materials properties and its application. These results have been supported by recent calculations based on density functional theory employing hybrid functional. In the present study, we employ mass action analysis to calculate the impact of germanium, tin and lead doping on the relative concentrations of vacancy-oxygen defects and defect clusters in silicon under equilibrium conditions. In particular, we calculate how much isovalent doping is required to constrain vacancy-oxygen concentration in silicon and conclude that Sn and Pb doping are the most effective isovalent dopants. The results are discussed in view of recent experimental and computational results.
Original languageEnglish
Pages (from-to)4385-4391
JournalJournal of Materials Science: Materials in Electronics
Volume27
Issue number5
DOIs
Publication statusPublished - 29 Jan 2016

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Bibliographical note

The final publication is available at Springer via http://dx.doi.org/10.1007/s10854-016-4308-9

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