Controlling A-center concentration in silicon through isovalent doping: Mass action analysis

Stavros Christopoulos, David C. Parfitt, E. N. Sgourou, C. A. Londos, R. V. Vovk, Alexander Chroneos

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    Abstract

    It has been determined experimentally that doping silicon with large isovalent dopants such as tin can limit the concentration of vacancy-oxygen defects, this in turn, can be deleterious for the materials properties and its application. These results have been supported by recent calculations based on density functional theory employing hybrid functional. In the present study, we employ mass action analysis to calculate the impact of germanium, tin and lead doping on the relative concentrations of vacancy-oxygen defects and defect clusters in silicon under equilibrium conditions. In particular, we calculate how much isovalent doping is required to constrain vacancy-oxygen concentration in silicon and conclude that Sn and Pb doping are the most effective isovalent dopants. The results are discussed in view of recent experimental and computational results.
    Original languageEnglish
    Pages (from-to)4385-4391
    JournalJournal of Materials Science: Materials in Electronics
    Volume27
    Issue number5
    Early online date29 Jan 2016
    DOIs
    Publication statusPublished - May 2016

    Bibliographical note

    The final publication is available at Springer via http://dx.doi.org/10.1007/s10854-016-4308-9

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