Computer modeling investigation of MgV2O4 for Mg-ion batteries

Research output: Contribution to journalArticle

Abstract

MgV2O4 is a vanadium spinel considered for rechargeable magnesium ion batteries. Its defect chemistry, solution of dopants, and the diffusion of Mg ions are investigated using advanced atomistic modeling techniques. The energetically most favorable defect is Mg–V anti-site cluster (0.53 eV/defect) assuming that a small percentage of Mg2+ and V3+ ions would exchange their positions, particularly at higher temperatures.
Reaction energies for the loss of MgO via MgO Schottky and the formation of Mg vacancies via Mg Frenkel are calculated to be 5.13 eV/defect and 5.23 eV/defect, respectively, suggesting that the concentrations of these two defects will not be significant. The most favorable diffusion mechanism of Mg ions is a three-dimensional pathway, where the activation energy of migration is 0.52 eV. The formation of Mg interstitials and O vacancies can be facilitated by doping with Co2+ at the V site in MgV2O4. The electronic structures of the favorable dopants calculated
using the density functional theory are discussed.
Original languageEnglish
Article number035106
Number of pages10
JournalJournal of Applied Physics
Volume127
Issue number3
DOIs
Publication statusPublished - 17 Jan 2020

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electric batteries
defects
ions
vanadium
spinel
magnesium
interstitials
chemistry
activation energy
density functional theory
electronic structure
energy

Bibliographical note

Article to download from publisher.

Funder

European Union’s H2020<br/>Programme under Grant Agreement No. 824072–HARVESTORE

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Computer modeling investigation of MgV2O4 for Mg-ion batteries. / Kuganathan, Navaratnarajah; Davazoglou, Konstantinos ; Chroneos, Alexander.

In: Journal of Applied Physics, Vol. 127, No. 3, 035106, 17.01.2020.

Research output: Contribution to journalArticle

@article{7ab94e2853dd4c3898229495b35e66c0,
title = "Computer modeling investigation of MgV2O4 for Mg-ion batteries",
abstract = "MgV2O4 is a vanadium spinel considered for rechargeable magnesium ion batteries. Its defect chemistry, solution of dopants, and the diffusion of Mg ions are investigated using advanced atomistic modeling techniques. The energetically most favorable defect is Mg–V anti-site cluster (0.53 eV/defect) assuming that a small percentage of Mg2+ and V3+ ions would exchange their positions, particularly at higher temperatures.Reaction energies for the loss of MgO via MgO Schottky and the formation of Mg vacancies via Mg Frenkel are calculated to be 5.13 eV/defect and 5.23 eV/defect, respectively, suggesting that the concentrations of these two defects will not be significant. The most favorable diffusion mechanism of Mg ions is a three-dimensional pathway, where the activation energy of migration is 0.52 eV. The formation of Mg interstitials and O vacancies can be facilitated by doping with Co2+ at the V site in MgV2O4. The electronic structures of the favorable dopants calculatedusing the density functional theory are discussed.",
author = "Navaratnarajah Kuganathan and Konstantinos Davazoglou and Alexander Chroneos",
note = "Article to download from publisher.",
year = "2020",
month = "1",
day = "17",
doi = "10.1063/1.5139114",
language = "English",
volume = "127",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics",
number = "3",

}

TY - JOUR

T1 - Computer modeling investigation of MgV2O4 for Mg-ion batteries

AU - Kuganathan, Navaratnarajah

AU - Davazoglou, Konstantinos

AU - Chroneos, Alexander

N1 - Article to download from publisher.

PY - 2020/1/17

Y1 - 2020/1/17

N2 - MgV2O4 is a vanadium spinel considered for rechargeable magnesium ion batteries. Its defect chemistry, solution of dopants, and the diffusion of Mg ions are investigated using advanced atomistic modeling techniques. The energetically most favorable defect is Mg–V anti-site cluster (0.53 eV/defect) assuming that a small percentage of Mg2+ and V3+ ions would exchange their positions, particularly at higher temperatures.Reaction energies for the loss of MgO via MgO Schottky and the formation of Mg vacancies via Mg Frenkel are calculated to be 5.13 eV/defect and 5.23 eV/defect, respectively, suggesting that the concentrations of these two defects will not be significant. The most favorable diffusion mechanism of Mg ions is a three-dimensional pathway, where the activation energy of migration is 0.52 eV. The formation of Mg interstitials and O vacancies can be facilitated by doping with Co2+ at the V site in MgV2O4. The electronic structures of the favorable dopants calculatedusing the density functional theory are discussed.

AB - MgV2O4 is a vanadium spinel considered for rechargeable magnesium ion batteries. Its defect chemistry, solution of dopants, and the diffusion of Mg ions are investigated using advanced atomistic modeling techniques. The energetically most favorable defect is Mg–V anti-site cluster (0.53 eV/defect) assuming that a small percentage of Mg2+ and V3+ ions would exchange their positions, particularly at higher temperatures.Reaction energies for the loss of MgO via MgO Schottky and the formation of Mg vacancies via Mg Frenkel are calculated to be 5.13 eV/defect and 5.23 eV/defect, respectively, suggesting that the concentrations of these two defects will not be significant. The most favorable diffusion mechanism of Mg ions is a three-dimensional pathway, where the activation energy of migration is 0.52 eV. The formation of Mg interstitials and O vacancies can be facilitated by doping with Co2+ at the V site in MgV2O4. The electronic structures of the favorable dopants calculatedusing the density functional theory are discussed.

UR - http://www.scopus.com/inward/record.url?scp=85078305399&partnerID=8YFLogxK

U2 - 10.1063/1.5139114

DO - 10.1063/1.5139114

M3 - Article

VL - 127

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

M1 - 035106

ER -