Coil Design for Integration with GaN Hall-Effect Sensors

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

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Abstract

In this paper, we report on and compare coil designs for Gallium Nitride (GaN) smart power integration, where the power switch is monolithically integrated with Hall-effect sensor. A detailed geometry optimization study for a coil routed around a GaN Hall-effect magnetic sensor is presented for current monitoring applications. An electromagnetic 3-dimensional model examines the dimensions and configurations of the coil in a single or multiple turns for integration with a senseHEMT to galvanically monitor the current of the main power switch. Using concentric receiving zones on the sensor surface, the theoretical results demonstrate how coil designs affect the magnetic field spatial distribution. We use the MATLAB environment as an extensively adopted computing platform to electromagnetically simulate priory design the coils for GaN smart power integration.
Original languageEnglish
Title of host publication 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)
PublisherIEEE
Number of pages4
ISBN (Electronic)978-1-6654-8814-3
ISBN (Print)978-1-6654-8815-0
DOIs
Publication statusE-pub ahead of print - 8 Nov 2022
Event2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, - Coventry, United Kingdom
Duration: 18 Sept 202220 Sept 2022

Conference

Conference2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe,
Abbreviated titleWiPDA Europe 2022
Country/TerritoryUnited Kingdom
CityCoventry
Period18/09/2220/09/22

Bibliographical note

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Keywords

  • Hall
  • FEA
  • FEM
  • simulation
  • MATLAB
  • GaN

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