Abstract
In order to study switching waveforms of a SiC-JFET, its interelectrode capacitances evolution is necessary when the power device is in linear region. In this paper, the reverse transfer capacitance Cgd is at first characterized by the multiple-current-probe method and afterwards validated by the measurement with an impedance analyzer. The output capacitance Coss is measured by the same method and compared with the single-pulse characterization, which shows a huge increase of the apparent capacitance values in linear region. The influence of the power transistor internal gate resistor is thus studied, revealing the interelectrode capacitances measurement difficulties when the power device is in linear region. The characterization results are allowed to finely model the power transistor of which the switching behaviors are validated with the measurement in a buck converter.
| Original language | English |
|---|---|
| Article number | 7089310 |
| Pages (from-to) | 1528-1540 |
| Number of pages | 13 |
| Journal | IEEE Transactions on Power Electronics |
| Volume | 31 |
| Issue number | 2 |
| Early online date | 20 Apr 2015 |
| DOIs | |
| Publication status | Published - 1 Feb 2016 |
| Externally published | Yes |
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Keywords
- Gate resistance Rg
- Inter-electrode capacitances
- Linear region
- Multi-current-probe method
- SiC-JFET
- single-pulse characterization
ASJC Scopus subject areas
- Electrical and Electronic Engineering