Characterization Method of SiC-JFET Interelectrode Capacitances in Linear Region

Ke Li, Arnaud Videt, Nadir Idir

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In order to study switching waveforms of a SiC-JFET, its interelectrode capacitances evolution is necessary when the power device is in linear region. In this paper, the reverse transfer capacitance Cgd is at first characterized by the multiple-current-probe method and afterwards validated by the measurement with an impedance analyzer. The output capacitance Coss is measured by the same method and compared with the single-pulse characterization, which shows a huge increase of the apparent capacitance values in linear region. The influence of the power transistor internal gate resistor is thus studied, revealing the interelectrode capacitances measurement difficulties when the power device is in linear region. The characterization results are allowed to finely model the power transistor of which the switching behaviors are validated with the measurement in a buck converter.

Original languageEnglish
Article number7089310
Pages (from-to)1528-1540
Number of pages13
JournalIEEE Transactions on Power Electronics
Volume31
Issue number2
Early online date20 Apr 2015
DOIs
Publication statusPublished - 1 Feb 2016
Externally publishedYes

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Keywords

  • Gate resistance Rg
  • Inter-electrode capacitances
  • Linear region
  • Multi-current-probe method
  • SiC-JFET
  • single-pulse characterization

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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