Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC Schottky Barrier Diodes

Anastasios Arvanitopoulos, Samuel Perkins, Konstantinos N. Gyftakis, Neo Lophitis, Mike Jennings, Marina Antoniou

Research output: Research - peer-reviewConference proceeding

Abstract

3C-Silicon Carbide (3C-SiC) Schottky Barrier Diodes on silicon (Si) substrates (3C-SiC-on-Si) seem not to comply with the superior wide band gap expectations in terms of excessive measured sub-threshold current. In turn, that is one of the factors which deters their commercialization. Interestingly, the forward biased part of the Current-Voltage (I-V) characteristics in these devices carries considerable information about the material quality. In this context, an advanced Technology Computer Aided Design (TCAD) model for a vertical Platinum/3C-SiC Schottky power diode is created and validated with measured data. The model includes defects originating from both the Schottky contact and the hetero-interface of 3C-SiC with Si which allows the investigation of their impact on the magnification of the sub-threshold current. For this, barrier lowering, quantum field emission and trap assisted tunneling of majority carriers need to be considered at the non-ideal Schottky interface. The simulation results and measured data allowed for the comprehensive characterization of the defects affecting the carrier transport mechanisms of the forward biased 3C-SiC on Si power rectifier for the first time.
LanguageEnglish
Title of host publication2018 1st IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia 2018)
PublisherIEEE
Pages(in press)
Volume(In-Press)
StateAccepted/In press - 4 Feb 2018
Event2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) - Xi'an, China
Duration: 16 May 201818 May 2018
Conference number: 1
http://www.wipda-asia.org/index.html

Conference

Conference2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
Abbreviated titleWiPDA Asia
CountryChina
CityXi'an
Period16/05/1818/05/18
Internet address

Fingerprint

Schottky diodes
threshold currents
silicon carbides
silicon
majority carriers
commercialization
rectifiers
defects
computer aided design
magnification
field emission
electric contacts
platinum
diodes
traps
broadband
electric potential
simulation

Cite this

Arvanitopoulos, A., Perkins, S., Gyftakis, K. N., Lophitis, N., Jennings, M., & Antoniou, M. (2018). Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC Schottky Barrier Diodes. In 2018 1st IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia 2018) (Vol. (In-Press), pp. (in press)). IEEE.

Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC Schottky Barrier Diodes. / Arvanitopoulos, Anastasios; Perkins, Samuel; Gyftakis, Konstantinos N.; Lophitis, Neo; Jennings, Mike; Antoniou, Marina.

2018 1st IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia 2018). Vol. (In-Press) IEEE, 2018. p. (in press).

Research output: Research - peer-reviewConference proceeding

Arvanitopoulos, A, Perkins, S, Gyftakis, KN, Lophitis, N, Jennings, M & Antoniou, M 2018, Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC Schottky Barrier Diodes. in 2018 1st IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia 2018). vol. (In-Press), IEEE, pp. (in press), 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), Xi'an, China, 16/05/18.
Arvanitopoulos A, Perkins S, Gyftakis KN, Lophitis N, Jennings M, Antoniou M. Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC Schottky Barrier Diodes. In 2018 1st IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia 2018). Vol. (In-Press). IEEE. 2018. p. (in press).
Arvanitopoulos, Anastasios ; Perkins, Samuel ; Gyftakis, Konstantinos N. ; Lophitis, Neo ; Jennings, Mike ; Antoniou, Marina. / Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC Schottky Barrier Diodes. 2018 1st IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia 2018). Vol. (In-Press) IEEE, 2018. pp. (in press)
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abstract = "3C-Silicon Carbide (3C-SiC) Schottky Barrier Diodes on silicon (Si) substrates (3C-SiC-on-Si) seem not to comply with the superior wide band gap expectations in terms of excessive measured sub-threshold current. In turn, that is one of the factors which deters their commercialization. Interestingly, the forward biased part of the Current-Voltage (I-V) characteristics in these devices carries considerable information about the material quality. In this context, an advanced Technology Computer Aided Design (TCAD) model for a vertical Platinum/3C-SiC Schottky power diode is created and validated with measured data. The model includes defects originating from both the Schottky contact and the hetero-interface of 3C-SiC with Si which allows the investigation of their impact on the magnification of the sub-threshold current. For this, barrier lowering, quantum field emission and trap assisted tunneling of majority carriers need to be considered at the non-ideal Schottky interface. The simulation results and measured data allowed for the comprehensive characterization of the defects affecting the carrier transport mechanisms of the forward biased 3C-SiC on Si power rectifier for the first time.",
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N2 - 3C-Silicon Carbide (3C-SiC) Schottky Barrier Diodes on silicon (Si) substrates (3C-SiC-on-Si) seem not to comply with the superior wide band gap expectations in terms of excessive measured sub-threshold current. In turn, that is one of the factors which deters their commercialization. Interestingly, the forward biased part of the Current-Voltage (I-V) characteristics in these devices carries considerable information about the material quality. In this context, an advanced Technology Computer Aided Design (TCAD) model for a vertical Platinum/3C-SiC Schottky power diode is created and validated with measured data. The model includes defects originating from both the Schottky contact and the hetero-interface of 3C-SiC with Si which allows the investigation of their impact on the magnification of the sub-threshold current. For this, barrier lowering, quantum field emission and trap assisted tunneling of majority carriers need to be considered at the non-ideal Schottky interface. The simulation results and measured data allowed for the comprehensive characterization of the defects affecting the carrier transport mechanisms of the forward biased 3C-SiC on Si power rectifier for the first time.

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