Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC-on-Si Schottky Barrier Diodes

Anastasios Arvanitopoulos, Samuel Perkins, Konstantinos N. Gyftakis, Neo Lophitis, Mike Jennings, Marina Antoniou

    Research output: Chapter in Book/Report/Conference proceedingConference proceedingpeer-review

    2 Citations (Scopus)
    126 Downloads (Pure)

    Abstract

    3C-Silicon Carbide (3C-SiC) Schottky Barrier Diodes on silicon (Si) substrates (3C-SiC-on-Si) seem not to comply with the superior wide band gap expectations in terms of excessive measured sub-threshold current. In turn, that is one of the factors which deters their commercialization. Interestingly, the forward biased part of the Current-Voltage (I-V) characteristics in these devices carries considerable information about the material quality. In this context, an advanced Technology Computer Aided Design (TCAD) model for a vertical Platinum/3C-SiC Schottky power diode is created and validated with measured data. The model includes defects originating from both the Schottky contact and the hetero-interface of 3C-SiC with Si which allows the investigation of their impact on the magnification of the sub-threshold current. For this, barrier lowering, quantum field emission and trap assisted tunneling of majority carriers need to be considered at the non-ideal Schottky interface. The simulation results and measured data allowed for the comprehensive characterization of the defects affecting the carrier transport mechanisms of the forward biased 3C-SiC on Si power rectifier for the first time.
    Original languageEnglish
    Title of host publication2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018
    PublisherIEEE
    Pages169-173
    Number of pages5
    ISBN (Electronic)978-1-5386-4392-1
    ISBN (Print)978-1-5386-4393-8
    DOIs
    Publication statusPublished - 13 Jun 2019
    Event2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) - Xi'an, China
    Duration: 16 May 201818 May 2018
    Conference number: 1
    http://www.wipda-asia.org/index.html

    Conference

    Conference2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
    Abbreviated titleWiPDA Asia
    Country/TerritoryChina
    CityXi'an
    Period16/05/1818/05/18
    Internet address

    Bibliographical note

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    Keywords

    • 3C-SiC
    • SBD
    • Schottky interface
    • TCAD
    • band diagram
    • carrier transport
    • defects
    • heteroepitaxy
    • unipolar

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Control and Optimization
    • Energy Engineering and Power Technology
    • Electrical and Electronic Engineering

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