Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC Schottky Barrier Diodes

Anastasios Arvanitopoulos, Samuel Perkins, Mike Jennings, Marina Antoniou, Konstantinos N. Gyftakis, Neo Lophitis

Research output: Research - peer-reviewConference proceeding

LanguageEnglish
Title of host publication2018 1st IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia 2018)
PublisherIEEE
Pages(in press)
Volume(in press)
StateAccepted/In press - 4 Feb 2018
Event2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) - Xi'an, China
Duration: 16 May 201818 May 2018
Conference number: 1
http://www.wipda-asia.org/index.html

Conference

Conference2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
Abbreviated titleWiPDA Asia
CountryChina
CityXi'an
Period16/05/1818/05/18
Internet address

Cite this

Arvanitopoulos, A., Perkins, S., Jennings, M., Antoniou, M., Gyftakis, K. N., & Lophitis, N. (2018). Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC Schottky Barrier Diodes. In 2018 1st IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia 2018) (Vol. (in press), pp. (in press)). IEEE.

Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC Schottky Barrier Diodes. / Arvanitopoulos, Anastasios; Perkins, Samuel; Jennings, Mike; Antoniou, Marina; Gyftakis, Konstantinos N.; Lophitis, Neo.

2018 1st IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia 2018). Vol. (in press) IEEE, 2018. p. (in press).

Research output: Research - peer-reviewConference proceeding

Arvanitopoulos, A, Perkins, S, Jennings, M, Antoniou, M, Gyftakis, KN & Lophitis, N 2018, Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC Schottky Barrier Diodes. in 2018 1st IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia 2018). vol. (in press), IEEE, pp. (in press), 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), Xi'an, China, 16/05/18.
Arvanitopoulos A, Perkins S, Jennings M, Antoniou M, Gyftakis KN, Lophitis N. Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC Schottky Barrier Diodes. In 2018 1st IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia 2018). Vol. (in press). IEEE. 2018. p. (in press).
Arvanitopoulos, Anastasios ; Perkins, Samuel ; Jennings, Mike ; Antoniou, Marina ; Gyftakis, Konstantinos N. ; Lophitis, Neo. / Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC Schottky Barrier Diodes. 2018 1st IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia 2018). Vol. (in press) IEEE, 2018. pp. (in press)
@inbook{8a73b540a16d4220a33ab112850ada12,
title = "Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC Schottky Barrier Diodes",
author = "Anastasios Arvanitopoulos and Samuel Perkins and Mike Jennings and Marina Antoniou and Gyftakis, {Konstantinos N.} and Neo Lophitis",
year = "2018",
month = "2",
volume = "(in press)",
pages = "(in press)",
booktitle = "2018 1st IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia 2018)",
publisher = "IEEE",

}

TY - CHAP

T1 - Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC Schottky Barrier Diodes

AU - Arvanitopoulos,Anastasios

AU - Perkins,Samuel

AU - Jennings,Mike

AU - Antoniou,Marina

AU - Gyftakis,Konstantinos N.

AU - Lophitis,Neo

PY - 2018/2/4

Y1 - 2018/2/4

M3 - Conference proceeding

VL - (in press)

SP - (in press)

BT - 2018 1st IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia 2018)

PB - IEEE

ER -