Abstract
3C-Silicon Carbide (3C-SiC) Schottky Barrier Diodes on silicon (Si) substrates (3C-SiC-on-Si) seem not to comply with the superior wide band gap expectations in terms of excessive measured sub-threshold current. In turn, that is one of the factors which deters their commercialization. Interestingly, the forward biased part of the Current-Voltage (I-V) characteristics in these devices carries considerable information about the material quality. In this context, an advanced Technology Computer Aided Design (TCAD) model for a vertical Platinum/3C-SiC Schottky power diode is created and validated with measured data. The model includes defects originating from both the Schottky contact and the hetero-interface of 3C-SiC with Si which allows the investigation of their impact on the magnification of the sub-threshold current. For this, barrier lowering, quantum field emission and trap assisted tunneling of majority carriers need to be considered at the non-ideal Schottky interface. The simulation results and measured data allowed for the comprehensive characterization of the defects affecting the carrier transport mechanisms of the forward biased 3C-SiC on Si power rectifier for the first time.
Original language | English |
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Title of host publication | 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018 |
Publisher | IEEE |
Pages | 169-173 |
Number of pages | 5 |
ISBN (Electronic) | 978-1-5386-4392-1 |
ISBN (Print) | 978-1-5386-4393-8 |
DOIs | |
Publication status | Published - 13 Jun 2019 |
Event | 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) - Xi'an, China Duration: 16 May 2018 → 18 May 2018 Conference number: 1 http://www.wipda-asia.org/index.html |
Conference
Conference | 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) |
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Abbreviated title | WiPDA Asia |
Country/Territory | China |
City | Xi'an |
Period | 16/05/18 → 18/05/18 |
Internet address |
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Keywords
- 3C-SiC
- SBD
- Schottky interface
- TCAD
- band diagram
- carrier transport
- defects
- heteroepitaxy
- unipolar
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Control and Optimization
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering