Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC-on-Si Schottky Barrier Diodes

Anastasios Arvanitopoulos; Samuel Perkins; Konstantinos N. Gyftakis; Neo Lophitis; Mike Jennings; Marina Antoniou

doi:10.1109/WiPDAAsia.2018.8734538

Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC-on-Si Schottky Barrier Diodes

Anastasios Arvanitopoulos, Samuel Perkins, Konstantinos N. Gyftakis, Neo Lophitis, Mike Jennings, Marina Antoniou

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

2 Citations (Scopus)

93 Downloads (Pure)

Abstract

3C-Silicon Carbide (3C-SiC) Schottky Barrier Diodes on silicon (Si) substrates (3C-SiC-on-Si) seem not to comply with the superior wide band gap expectations in terms of excessive measured sub-threshold current. In turn, that is one of the factors which deters their commercialization. Interestingly, the forward biased part of the Current-Voltage (I-V) characteristics in these devices carries considerable information about the material quality. In this context, an advanced Technology Computer Aided Design (TCAD) model for a vertical Platinum/3C-SiC Schottky power diode is created and validated with measured data. The model includes defects originating from both the Schottky contact and the hetero-interface of 3C-SiC with Si which allows the investigation of their impact on the magnification of the sub-threshold current. For this, barrier lowering, quantum field emission and trap assisted tunneling of majority carriers need to be considered at the non-ideal Schottky interface. The simulation results and measured data allowed for the comprehensive characterization of the defects affecting the carrier transport mechanisms of the forward biased 3C-SiC on Si power rectifier for the first time.

Original language	English
Title of host publication	2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018
Publisher	IEEE
Pages	169-173
Number of pages	5
ISBN (Electronic)	978-1-5386-4392-1
ISBN (Print)	978-1-5386-4393-8
DOIs	https://doi.org/10.1109/WiPDAAsia.2018.8734538
Publication status	Published - 13 Jun 2019
Event	2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) - Xi'an, China Duration: 16 May 2018 → 18 May 2018 Conference number: 1 http://www.wipda-asia.org/index.html

Conference

Conference	2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
Abbreviated title	WiPDA Asia
Country/Territory	China
City	Xi'an
Period	16/05/18 → 18/05/18
Internet address	http://www.wipda-asia.org/index.html

Bibliographical note

© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must
be obtained for all other uses, in any current or future media, including
reprinting/republishing this material for advertising or promotional purposes,
creating new collective works, for resale or redistribution to servers or lists, or
reuse of any copyrighted component of this work in other works.

Keywords

3C-SiC
SBD
Schottky interface
TCAD
band diagram
carrier transport
defects
heteroepitaxy
unipolar

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Control and Optimization
Energy Engineering and Power Technology
Electrical and Electronic Engineering

Access to Document

10.1109/WiPDAAsia.2018.8734538

Post-printAccepted author manuscript, 1.14 MB

Cite this

Arvanitopoulos, A., Perkins, S., Gyftakis, K. N., Lophitis, N., Jennings, M., & Antoniou, M. (2019). Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC-on-Si Schottky Barrier Diodes. In 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018 (pp. 169-173). [8734538] IEEE. https://doi.org/10.1109/WiPDAAsia.2018.8734538

Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC-on-Si Schottky Barrier Diodes. / Arvanitopoulos, Anastasios; Perkins, Samuel; Gyftakis, Konstantinos N. et al.

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018. IEEE, 2019. p. 169-173 8734538.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

Arvanitopoulos, A, Perkins, S, Gyftakis, KN, Lophitis, N, Jennings, M & Antoniou, M 2019, Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC-on-Si Schottky Barrier Diodes. in 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018., 8734538, IEEE, pp. 169-173, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), Xi'an, China, 16/05/18. https://doi.org/10.1109/WiPDAAsia.2018.8734538

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abstract = "3C-Silicon Carbide (3C-SiC) Schottky Barrier Diodes on silicon (Si) substrates (3C-SiC-on-Si) seem not to comply with the superior wide band gap expectations in terms of excessive measured sub-threshold current. In turn, that is one of the factors which deters their commercialization. Interestingly, the forward biased part of the Current-Voltage (I-V) characteristics in these devices carries considerable information about the material quality. In this context, an advanced Technology Computer Aided Design (TCAD) model for a vertical Platinum/3C-SiC Schottky power diode is created and validated with measured data. The model includes defects originating from both the Schottky contact and the hetero-interface of 3C-SiC with Si which allows the investigation of their impact on the magnification of the sub-threshold current. For this, barrier lowering, quantum field emission and trap assisted tunneling of majority carriers need to be considered at the non-ideal Schottky interface. The simulation results and measured data allowed for the comprehensive characterization of the defects affecting the carrier transport mechanisms of the forward biased 3C-SiC on Si power rectifier for the first time.",

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AU - Perkins, Samuel

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AU - Lophitis, Neo

AU - Jennings, Mike

AU - Antoniou, Marina

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N2 - 3C-Silicon Carbide (3C-SiC) Schottky Barrier Diodes on silicon (Si) substrates (3C-SiC-on-Si) seem not to comply with the superior wide band gap expectations in terms of excessive measured sub-threshold current. In turn, that is one of the factors which deters their commercialization. Interestingly, the forward biased part of the Current-Voltage (I-V) characteristics in these devices carries considerable information about the material quality. In this context, an advanced Technology Computer Aided Design (TCAD) model for a vertical Platinum/3C-SiC Schottky power diode is created and validated with measured data. The model includes defects originating from both the Schottky contact and the hetero-interface of 3C-SiC with Si which allows the investigation of their impact on the magnification of the sub-threshold current. For this, barrier lowering, quantum field emission and trap assisted tunneling of majority carriers need to be considered at the non-ideal Schottky interface. The simulation results and measured data allowed for the comprehensive characterization of the defects affecting the carrier transport mechanisms of the forward biased 3C-SiC on Si power rectifier for the first time.

AB - 3C-Silicon Carbide (3C-SiC) Schottky Barrier Diodes on silicon (Si) substrates (3C-SiC-on-Si) seem not to comply with the superior wide band gap expectations in terms of excessive measured sub-threshold current. In turn, that is one of the factors which deters their commercialization. Interestingly, the forward biased part of the Current-Voltage (I-V) characteristics in these devices carries considerable information about the material quality. In this context, an advanced Technology Computer Aided Design (TCAD) model for a vertical Platinum/3C-SiC Schottky power diode is created and validated with measured data. The model includes defects originating from both the Schottky contact and the hetero-interface of 3C-SiC with Si which allows the investigation of their impact on the magnification of the sub-threshold current. For this, barrier lowering, quantum field emission and trap assisted tunneling of majority carriers need to be considered at the non-ideal Schottky interface. The simulation results and measured data allowed for the comprehensive characterization of the defects affecting the carrier transport mechanisms of the forward biased 3C-SiC on Si power rectifier for the first time.

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ER -

Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC-on-Si Schottky Barrier Diodes

Abstract

Conference

Bibliographical note

Keywords

ASJC Scopus subject areas

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