Analysis of GaN MagHEMTs

Soroush Faramehr, Nebojsa Jankovic, Petar Igic

Research output: Contribution to journalArticle

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Abstract

The simulations, calibration, measured output currents and relative sensitivity of the first-ever fabricated gallium nitride (GaN) magnetic high electron mobility transistors (MagHEMTs) are given in this work. The current imbalance and relative sensitivities obtained from simulations are calibrated against the experimental data measured at room temperature (RT). The average calculated relative sensitivity of the 60 fabricated devices measured is 11.98%T−1. We present three-dimensional simulation results of GaN split-current magnetic sensors for different geometrical and biasing parameters at various ambient temperatures. The detailed analysis of device behaviour is given for each scenario. The relative sensitivity degrades at 400 K (S r = 6.78%T−1) and 500 K (S r = 4.91%T−1) compared to the sensitivity measured at 300 K (S r = 11.98%T−1). The GaN MagHEMTs show promising predicted relative sensitivities at 400 K and 500 K compared to silicon magnetic field effect transistors (MagFETs) operating at much lower temperatures. Moreover, device geometrical parameters are optimised to enhance the relative sensitivity from 11.98%T−1 to 23.29%T−1 using the commercial simulation toolbox Atlas, by Silvaco.
Original languageEnglish
Article number095015
JournalSemiconductor Science and Technology
Volume33
Issue number9
Early online date24 Jul 2018
DOIs
Publication statusPublished - 17 Aug 2018
Externally publishedYes

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Gallium nitride
gallium nitrides
High electron mobility transistors
high electron mobility transistors
sensitivity
Magnetic field effects
Magnetic sensors
Silicon
Field effect transistors
Temperature
Calibration
simulation
gallium nitride
ambient temperature
field effect transistors
output
sensors
silicon
room temperature
magnetic fields

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Analysis of GaN MagHEMTs. / Faramehr, Soroush; Jankovic, Nebojsa; Igic, Petar.

In: Semiconductor Science and Technology, Vol. 33, No. 9, 095015, 17.08.2018.

Research output: Contribution to journalArticle

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