Analysis of GaN MagFETs compatible with RF power technology

Soroush Faramehr, Bethan Thomas, Nebojsa Jankovic, Jon Evans, Matt Elwin, Petar Igic

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

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Abstract

The three-dimensional simulations, calibration, measured currents and calculated relative sensitivities of the first-ever fabricated double-drain gallium nitride (GaN) magnetic field effect transistor (MagFET) are given in this work. The MagFETs are GaN high electron mobility transistors (HEMTs) capable of operating under harsh environments. Geometrical and operational analysis are carried out on MagFETs using commercial simulation software Silvaco. The analysis shows promising relative sensitivities of 6.84%T -1 and 5.04%T -1 at ambient temperatures of 400 K and 500 K, respectively. In addition, the relative sensitivity of fabricated device is improved from 12%T -1 to 24%T -1 at 300 K by optimising device geometrical parameters.
Original languageEnglish
Title of host publication41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)
PublisherIEEE
Pages0050-0053
Number of pages4
ISBN (Electronic)978-953-233-095-3
DOIs
Publication statusPublished - 2 Jul 2018
Externally publishedYes
Event41st International Convention on Information and Communication Technology, Electronics and Microelectronics - Opatija, Croatia
Duration: 21 May 201825 May 2018
Conference number: 41st

Conference

Conference41st International Convention on Information and Communication Technology, Electronics and Microelectronics
Abbreviated titleMIPRO 2018
CountryCroatia
CityOpatija
Period21/05/1825/05/18

Fingerprint

gallium nitrides
sensitivity
high electron mobility transistors
ambient temperature
field effect transistors
simulation
computer programs
magnetic fields

Bibliographical note

© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Copyright © and Moral Rights are retained by the author(s) and/ or other copyright owners. A copy can be downloaded for personal non-commercial research or study, without prior permission or charge. This item cannot be reproduced or quoted extensively from without first obtaining permission in writing from the copyright holder(s). The content must not be changed in any way or sold commercially in any format or medium without the formal permission of the copyright holders.

Keywords

  • Gallium nitride
  • Sensitivity
  • HEMTs
  • MODFETs
  • Solids
  • Solid modeling

Cite this

Faramehr, S., Thomas, B., Jankovic, N., Evans, J., Elwin, M., & Igic, P. (2018). Analysis of GaN MagFETs compatible with RF power technology. In 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) (pp. 0050-0053). IEEE. https://doi.org/10.23919/MIPRO.2018.8400010

Analysis of GaN MagFETs compatible with RF power technology. / Faramehr, Soroush; Thomas, Bethan; Jankovic, Nebojsa ; Evans, Jon; Elwin, Matt; Igic, Petar.

41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). IEEE, 2018. p. 0050-0053.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

Faramehr, S, Thomas, B, Jankovic, N, Evans, J, Elwin, M & Igic, P 2018, Analysis of GaN MagFETs compatible with RF power technology. in 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). IEEE, pp. 0050-0053, 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, Opatija, Croatia, 21/05/18. https://doi.org/10.23919/MIPRO.2018.8400010
Faramehr S, Thomas B, Jankovic N, Evans J, Elwin M, Igic P. Analysis of GaN MagFETs compatible with RF power technology. In 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). IEEE. 2018. p. 0050-0053 https://doi.org/10.23919/MIPRO.2018.8400010
Faramehr, Soroush ; Thomas, Bethan ; Jankovic, Nebojsa ; Evans, Jon ; Elwin, Matt ; Igic, Petar. / Analysis of GaN MagFETs compatible with RF power technology. 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). IEEE, 2018. pp. 0050-0053
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