Analysis of GaN MagFETs compatible with RF power technology

Soroush Faramehr; Bethan Thomas; Nebojsa  Jankovic; Jon Evans; Matt Elwin; Petar Igic

doi:10.23919/MIPRO.2018.8400010

Analysis of GaN MagFETs compatible with RF power technology

Soroush Faramehr, Bethan Thomas, Nebojsa Jankovic, Jon Evans, Matt Elwin, Petar Igic

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

10 Citations (Scopus)

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Abstract

The three-dimensional simulations, calibration, measured currents and calculated relative sensitivities of the first-ever fabricated double-drain gallium nitride (GaN) magnetic field effect transistor (MagFET) are given in this work. The MagFETs are GaN high electron mobility transistors (HEMTs) capable of operating under harsh environments. Geometrical and operational analysis are carried out on MagFETs using commercial simulation software Silvaco. The analysis shows promising relative sensitivities of 6.84%T -1 and 5.04%T -1 at ambient temperatures of 400 K and 500 K, respectively. In addition, the relative sensitivity of fabricated device is improved from 12%T -1 to 24%T -1 at 300 K by optimising device geometrical parameters.

Original language	English
Title of host publication	41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)
Publisher	IEEE
Pages	0050-0053
Number of pages	4
ISBN (Electronic)	978-953-233-095-3
DOIs	https://doi.org/10.23919/MIPRO.2018.8400010
Publication status	Published - 2 Jul 2018
Externally published	Yes
Event	41st International Convention on Information and Communication Technology, Electronics and Microelectronics - Opatija, Croatia Duration: 21 May 2018 → 25 May 2018 Conference number: 41st

Conference

Conference	41st International Convention on Information and Communication Technology, Electronics and Microelectronics
Abbreviated title	MIPRO 2018
Country/Territory	Croatia
City	Opatija
Period	21/05/18 → 25/05/18

Bibliographical note

© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Copyright © and Moral Rights are retained by the author(s) and/ or other copyright owners. A copy can be downloaded for personal non-commercial research or study, without prior permission or charge. This item cannot be reproduced or quoted extensively from without first obtaining permission in writing from the copyright holder(s). The content must not be changed in any way or sold commercially in any format or medium without the formal permission of the copyright holders.

Keywords

Gallium nitride
Sensitivity
HEMTs
MODFETs
Solids
Solid modeling

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10.23919/MIPRO.2018.8400010

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Faramehr, S, Thomas, B, Jankovic, N, Evans, J, Elwin, M & Igic, P 2018, Analysis of GaN MagFETs compatible with RF power technology. in 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). IEEE, pp. 0050-0053, 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, Opatija, Croatia, 21/05/18. https://doi.org/10.23919/MIPRO.2018.8400010

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abstract = "The three-dimensional simulations, calibration, measured currents and calculated relative sensitivities of the first-ever fabricated double-drain gallium nitride (GaN) magnetic field effect transistor (MagFET) are given in this work. The MagFETs are GaN high electron mobility transistors (HEMTs) capable of operating under harsh environments. Geometrical and operational analysis are carried out on MagFETs using commercial simulation software Silvaco. The analysis shows promising relative sensitivities of 6.84%T -1 and 5.04%T -1 at ambient temperatures of 400 K and 500 K, respectively. In addition, the relative sensitivity of fabricated device is improved from 12%T -1 to 24%T -1 at 300 K by optimising device geometrical parameters.",

keywords = "Gallium nitride, Sensitivity, HEMTs, MODFETs, Solids, Solid modeling",

author = "Soroush Faramehr and Bethan Thomas and Nebojsa Jankovic and Jon Evans and Matt Elwin and Petar Igic",

note = "{\textcopyright} 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. Copyright {\textcopyright} and Moral Rights are retained by the author(s) and/ or other copyright owners. A copy can be downloaded for personal non-commercial research or study, without prior permission or charge. This item cannot be reproduced or quoted extensively from without first obtaining permission in writing from the copyright holder(s). The content must not be changed in any way or sold commercially in any format or medium without the formal permission of the copyright holders. ; 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018 ; Conference date: 21-05-2018 Through 25-05-2018",

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AU - Faramehr, Soroush

AU - Thomas, Bethan

AU - Jankovic, Nebojsa

AU - Evans, Jon

AU - Elwin, Matt

AU - Igic, Petar

N1 - Conference code: 41st

PY - 2018/7/2

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N2 - The three-dimensional simulations, calibration, measured currents and calculated relative sensitivities of the first-ever fabricated double-drain gallium nitride (GaN) magnetic field effect transistor (MagFET) are given in this work. The MagFETs are GaN high electron mobility transistors (HEMTs) capable of operating under harsh environments. Geometrical and operational analysis are carried out on MagFETs using commercial simulation software Silvaco. The analysis shows promising relative sensitivities of 6.84%T -1 and 5.04%T -1 at ambient temperatures of 400 K and 500 K, respectively. In addition, the relative sensitivity of fabricated device is improved from 12%T -1 to 24%T -1 at 300 K by optimising device geometrical parameters.

AB - The three-dimensional simulations, calibration, measured currents and calculated relative sensitivities of the first-ever fabricated double-drain gallium nitride (GaN) magnetic field effect transistor (MagFET) are given in this work. The MagFETs are GaN high electron mobility transistors (HEMTs) capable of operating under harsh environments. Geometrical and operational analysis are carried out on MagFETs using commercial simulation software Silvaco. The analysis shows promising relative sensitivities of 6.84%T -1 and 5.04%T -1 at ambient temperatures of 400 K and 500 K, respectively. In addition, the relative sensitivity of fabricated device is improved from 12%T -1 to 24%T -1 at 300 K by optimising device geometrical parameters.

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KW - Sensitivity

KW - HEMTs

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KW - Solids

KW - Solid modeling

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DO - 10.23919/MIPRO.2018.8400010

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T2 - 41st International Convention on Information and Communication Technology, Electronics and Microelectronics

Y2 - 21 May 2018 through 25 May 2018

ER -

Analysis of GaN MagFETs compatible with RF power technology

Abstract

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Keywords

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