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Analysis of GaN HEMTs Switching Transients Using Compact Model
Soroush Faramehr
,
Petar Igic
Research output
:
Contribution to journal
›
Article
›
peer-review
5
Citations (Scopus)
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Engineering & Materials Science
High electron mobility transistors
93%
Power HEMT
81%
Energy dissipation
13%
Computer aided design
13%
Networks (circuits)
8%
Chemistry
Parasitic
100%
Dissipation
44%
Simulation
25%