Analysis of GaN HEMTs Switching Transients Using Compact Model

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

This paper presents a methodology to model GaN power HEMT switching transients. Thus, a compact model to predict devices' pulse switching characteristics and current collapse reliability issue has been developed. Parasitic RC subcircuits and a standard double-pulse switching tester to model intrinsic parasitic effects and to analyze power dissipation of GaN power HEMT are proposed and presented. Switching transient including gate-lag and drain-lag is predicted for ideal (without trap) and nonideal (with trap) devices. The results are validated by and compared to 2-D finite-element technology computer-aided design simulations. The original aim of this exercise is to develop a fast (near-real-time) model which can predict dynamic behavior of single and multiple power GaN HEMTs used for the switching transients of GaN power devices at circuit level.
Original languageEnglish
Pages (from-to) 2900 - 2905
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume64
Issue number7
DOIs
Publication statusPublished - 18 May 2017

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High electron mobility transistors
Energy dissipation
Computer aided design
Networks (circuits)
Power HEMT

Keywords

  • Compact model
  • current collapse (CC)
  • double-pulse switch
  • drain-lag
  • GaN HEMTs
  • gate-lag
  • switching transients
  • technology computer-aided design (TCAD)

Cite this

Analysis of GaN HEMTs Switching Transients Using Compact Model. / Faramehr, Soroush; Igic, Petar.

In: IEEE Transactions on Electron Devices, Vol. 64, No. 7, 18.05.2017, p. 2900 - 2905.

Research output: Contribution to journalArticle

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