Analysis of GaN HEMTs Switching Transients Using Compact Model

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    Abstract

    This paper presents a methodology to model GaN power HEMT switching transients. Thus, a compact model to predict devices' pulse switching characteristics and current collapse reliability issue has been developed. Parasitic RC subcircuits and a standard double-pulse switching tester to model intrinsic parasitic effects and to analyze power dissipation of GaN power HEMT are proposed and presented. Switching transient including gate-lag and drain-lag is predicted for ideal (without trap) and nonideal (with trap) devices. The results are validated by and compared to 2-D finite-element technology computer-aided design simulations. The original aim of this exercise is to develop a fast (near-real-time) model which can predict dynamic behavior of single and multiple power GaN HEMTs used for the switching transients of GaN power devices at circuit level.
    Original languageEnglish
    Pages (from-to) 2900 - 2905
    Number of pages6
    JournalIEEE Transactions on Electron Devices
    Volume64
    Issue number7
    DOIs
    Publication statusPublished - 18 May 2017

    Keywords

    • Compact model
    • current collapse (CC)
    • double-pulse switch
    • drain-lag
    • GaN HEMTs
    • gate-lag
    • switching transients
    • technology computer-aided design (TCAD)

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