Abstract
With the rapid development of distributed photovoltaic (PV) systems, the boost-HERIC inverter topology has gained increasing adoption due to its superior voltage regulation and current control capability. In recent years, wide-bandgap devices such as GaN HEMTs have been extensively applied in PV inverters owing to their high switching speed and low conduction loss, thereby enabling higher power density and improved efficiency. However, in boost-HERIC systems, the fast switching operations of GaN HEMTs also introduce new challenges, including inductor current oscillation and bridge midpoint voltage imbalance. This paper investigates the underlying mechanisms of these issues and proposes corresponding mitigation strategies. A simulation model is developed to verify the effectiveness of the proposed methods, thereby providing theoretical guidance for the optimization of GaN-based PV grid-connected systems.
| Original language | English |
|---|---|
| Title of host publication | 2025 IEEE 3rd International Power Electronics and Application Symposium (PEAS) |
| Publisher | IEEE |
| Pages | 1732-1737 |
| Number of pages | 6 |
| ISBN (Electronic) | 979-8-3315-3911-5 |
| ISBN (Print) | 979-8-3315-3912-2 |
| DOIs | |
| Publication status | Published - 27 Feb 2026 |
| Event | 2025 IEEE 3rd International Power Electronics and Application Symposium (PEAS) - Shenzhen, China Duration: 7 Nov 2025 → 10 Nov 2025 |
Conference
| Conference | 2025 IEEE 3rd International Power Electronics and Application Symposium (PEAS) |
|---|---|
| Country/Territory | China |
| City | Shenzhen |
| Period | 7/11/25 → 10/11/25 |
Funding
This work is funded in part by the National Key R&D Program of China (2023YFE0115900) and the NSFC under project 52107218, 52177201 and Jiangsu Province under project BK20220091.
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- GaN HEMT
- PV inverter
- boost-HERIC
- inductor current oscillation
- midpoint voltage imbalance
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