An Online Unified Delay and Slew Rate Regulation for Current Sharing in Paralleled SiC Power Modules With Active Gate Drivers

Yan Li, Xibo Yuan, Yonglei Zhang, Kai Wang, Zihao Wang, Olayiwola Alatise, Wenzhi Zhou

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)
59 Downloads (Pure)

Abstract

To ensure balanced current sharing between paralleled power modules, active gate drivers (AGDs) can be used to adjust the currents dynamically. However, achieving effective, flexible and accurate dynamic current adjustment is a challenge for AGDs under the very fast switching speed of silicon carbide (SiC) devices, e.g., <100 ns. Therefore, an online unified turn-ON/OFF delay and current slew rate regulation scheme for AGDs for paralleling SiC metal-oxide-semiconductor field-effect-transistor (MOSFET) power modules is proposed in this article. The advantage of the proposed scheme is that it achieves independent closed-loop control for the delay regulation and the current slew rate regulation, i.e., the adjustment of the current slew rate will not affect the already-tuned delay compensation. Also, the proposed AGD based on gate resistance adjustment with just two push–pull driver channels and less switching actions can achieve the wider-range and multilevel current slew rate regulation. Experimental validation of the closed-loop current regulation for current sharing between SiC power modules with the presented AGD is provided.
Original languageEnglish
Pages (from-to)3246-3256
Number of pages11
JournalIEEE Transactions on Industrial Electronics
Volume72
Issue number4
Early online date19 Sept 2024
DOIs
Publication statusPublished - Apr 2025

Bibliographical note

This document is the author’s post-print version, incorporating any revisions agreed during the peer-review process. Some differences between the published version and this version may remain and you are advised to consult the published version if you wish to cite from it.

Funding

This work was supported in part by the National Key R&D Program of China under Grant 2023YFE0115900, in part by Jiangsu Province under Grant BK20220091, and in part by the NSFC under Grant 52177201 and Grant 52107218. The authors would like to thank Y. Yang and Y. Wen from Xi\u2019an University of Technology, Xi\u2019an, China, for their inspiration of this work. Manuscript received 3 February 2024; revised 18 May 2024; accepted 30 July 2024. This work was supported in part by the National Key R&D Program of China under Grant 2023YFE0115900, in part by Jiangsu Province under Grant BK20220091, and in part by the NSFC under Grant 52177201 and Grant 52107218. (Corresponding author: Xibo Yuan.) Yan Li, Xibo Yuan, Yonglei Zhang, Kai Wang, and Zihao Wang are with the School of Electrical Engineering, China University of Mining and Technology, Xuzhou 221116, China (e-mail: [email protected]; [email protected]; [email protected]; kai_wang@cumt. edu.cn; [email protected]).

FundersFunder number
Xi’an Technological University
National Key Research and Development Program of China2023YFE0115900
National Key Research and Development Program of China
Government of Jiangsu ProvinceBK20220091
Government of Jiangsu Province
National Natural Science Foundation of China52177201, 52107218
National Natural Science Foundation of China

    Keywords

    • Silicon carbide
    • Logic gates
    • Switches
    • Delays
    • Control systems
    • Multichip modules
    • MOSFET

    Fingerprint

    Dive into the research topics of 'An Online Unified Delay and Slew Rate Regulation for Current Sharing in Paralleled SiC Power Modules With Active Gate Drivers'. Together they form a unique fingerprint.

    Cite this