Abstract
To ensure balanced current sharing between paralleled power modules, active gate drivers (AGDs) can be used to adjust the currents dynamically. However, achieving effective, flexible and accurate dynamic current adjustment is a challenge for AGDs under the very fast switching speed of silicon carbide (SiC) devices, e.g., <100 ns. Therefore, an online unified turn-ON/OFF delay and current slew rate regulation scheme for AGDs for paralleling SiC metal-oxide-semiconductor field-effect-transistor (MOSFET) power modules is proposed in this article. The advantage of the proposed scheme is that it achieves independent closed-loop control for the delay regulation and the current slew rate regulation, i.e., the adjustment of the current slew rate will not affect the already-tuned delay compensation. Also, the proposed AGD based on gate resistance adjustment with just two push–pull driver channels and less switching actions can achieve the wider-range and multilevel current slew rate regulation. Experimental validation of the closed-loop current regulation for current sharing between SiC power modules with the presented AGD is provided.
Original language | English |
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Pages (from-to) | (In-Press) |
Number of pages | 11 |
Journal | IEEE Transactions on Industrial Electronics |
Volume | (In-Press) |
Early online date | 19 Sept 2024 |
DOIs | |
Publication status | E-pub ahead of print - 19 Sept 2024 |
Bibliographical note
This document is the author’s post-print version, incorporating any revisions agreed during the peer-review process. Some differences between the published version and this version may remain and you are advised to consult the published version if you wish to cite from it.Keywords
- Silicon carbide
- Logic gates
- Switches
- Delays
- Control systems
- Multichip modules
- MOSFET