An experimentally driven assessment of the dynamic-on resistance in correlation to other performance indicators in commercial Gallium Nitride power devices

Neophytos Lophitis; Samuel Perkins; Anastasios Arvanitopoulos; Soroush Faramehr; Petar Igic

doi:10.1109/WiPDAEurope55971.2022.9936253

An experimentally driven assessment of the dynamic-on resistance in correlation to other performance indicators in commercial Gallium Nitride power devices

Neophytos Lophitis, Samuel Perkins, Anastasios Arvanitopoulos, Soroush Faramehr, Petar Igic

Centre for E-Mobility and Clean Growth

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Abstract

This work provides an experimentally driven performance comparison of commercial Gallium Nitride on Silicon (GaN-on-Si) power devices rated 600-650V at room and elevated temperatures with the focus being in assessing the on resistance (RON) increase due to hard switching in correlation to other performance indicators. Device technologies evaluated include the Enhancement (E-mode) AlGaN/GaN Hybrid Drain p-GaN layer Gate Injection Transistor (p-GaN HD-GIT), the cascode AlGaN/GaN High Electron Mobility Transistor (cascode HEMT). For the dynamic RON analysis, a special setup was utilized which allows synchronized drain and gate pulses, and the ability to switch from OFF to ON in as little as 20μs. The ability to apply a wide range of voltage levels, stress duration and temperature enabled measurable increase in the dynamic RON in both the cascode HEMT and the p-GaN HD-GIT. Nonetheless, the results highlight a strong difference in their robustness.

Original language	English
Title of host publication	IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Number of pages	6
ISBN (Electronic)	9781665488143
ISBN (Print)	9781665488150
DOIs	https://doi.org/10.1109/WiPDAEurope55971.2022.9936253
Publication status	E-pub ahead of print - 8 Nov 2022
Event	2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, - Coventry, United Kingdom Duration: 18 Sept 2022 → 20 Sept 2022

Publication series

Name	IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2022

Conference

Conference	2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe,
Abbreviated title	WiPDA Europe 2022
Country/Territory	United Kingdom
City	Coventry
Period	18/09/22 → 20/09/22

Bibliographical note

Publisher Copyright:
© 2022 IEEE.

Keywords

casco de GaN
current collapse
E-mode
GaN HEMT
high temperature
power devices
static performance

ASJC Scopus subject areas

Safety, Risk, Reliability and Quality
Electronic, Optical and Magnetic Materials
Energy Engineering and Power Technology
Electrical and Electronic Engineering

Access to Document

10.1109/WiPDAEurope55971.2022.9936253

Cite this

Lophitis, N., Perkins, S., Arvanitopoulos, A., Faramehr, S., & Igic, P. (2022). An experimentally driven assessment of the dynamic-on resistance in correlation to other performance indicators in commercial Gallium Nitride power devices. In IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2022 (IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2022). Institute of Electrical and Electronics Engineers Inc.. Advance online publication. https://doi.org/10.1109/WiPDAEurope55971.2022.9936253

An experimentally driven assessment of the dynamic-on resistance in correlation to other performance indicators in commercial Gallium Nitride power devices. / Lophitis, Neophytos; Perkins, Samuel; Arvanitopoulos, Anastasios et al.
IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2022).

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Lophitis, N, Perkins, S, Arvanitopoulos, A, Faramehr, S & Igic, P 2022, An experimentally driven assessment of the dynamic-on resistance in correlation to other performance indicators in commercial Gallium Nitride power devices. in IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2022. IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2022, Institute of Electrical and Electronics Engineers Inc., 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, , Coventry, United Kingdom, 18/09/22. https://doi.org/10.1109/WiPDAEurope55971.2022.9936253

Lophitis N, Perkins S, Arvanitopoulos A, Faramehr S , Igic P. An experimentally driven assessment of the dynamic-on resistance in correlation to other performance indicators in commercial Gallium Nitride power devices. In IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2022. Institute of Electrical and Electronics Engineers Inc. 2022. (IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2022). Epub 2022 Nov 8. doi: 10.1109/WiPDAEurope55971.2022.9936253

Lophitis, Neophytos ; Perkins, Samuel ; Arvanitopoulos, Anastasios et al. / An experimentally driven assessment of the dynamic-on resistance in correlation to other performance indicators in commercial Gallium Nitride power devices. IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2022).

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An experimentally driven assessment of the dynamic-on resistance in correlation to other performance indicators in commercial Gallium Nitride power devices

Abstract

Publication series

Conference

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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