An experimental demonstration of a 4.5 kV “Bi-mode Gate Commutated Thyristor” (BGCT)

U. Vemulapati, M. Arnold, M. Rahimo, J. Vobecky, T. Stiasny, Neophytos Lophitis, F. Udrea

    Research output: Contribution to conferencePaper

    10 Citations (Scopus)

    Abstract

    In this work we present the first experimental results of a Bi-mode Gate Commutated Thyristor (BGCT). The BGCT is a new type of Reverse Conducting-Integrated Gate Commutated Thyristor (RC-IGCT). In a conventional RC-IGCT, the IGCT and diode are integrated into a single wafer but they are fully separated from each other. The novel BGCT on the other hand features an interdigitated integration of diode- and GCT-areas. This interdigitated integration results in an improved diode as well as GCT area, better thermal distribution, soft turn-off/reverse recovery and lower leakage current compared to conventional RC-IGCTs. We have discussed the advantages of a new diode anode design in BGCT, which is shallower than that of the conventional RC-IGCT. We have successfully demonstrated the BGCT concept with 38 mm, 4.5 kV prototypes and compared the on-state, turn-off and blocking characteristics with conventional RC-IGCTs both in GCT- and diode-modes of operation.
    Original languageEnglish
    Pages109-112
    DOIs
    Publication statusPublished - 2015
    EventIEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) - , Hong Kong
    Duration: 10 May 201514 May 2015

    Conference

    ConferenceIEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)
    Country/TerritoryHong Kong
    Period10/05/1514/05/15

    Bibliographical note

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    Keywords

    • leakage currents
    • semiconductor diodes
    • thyristors
    • BGCT
    • RC-IGCT
    • bimode gate commutated thyristor
    • diode anode
    • leakage current
    • reverse conducting-integrated gate commutated thyristor
    • soft turn-off-reverse recovery
    • thermal distribution
    • voltage 4.5 kV
    • Bi-mode GCT
    • High power semiconductor switch
    • IGCT
    • Reverse Conducting IGCT
    • Anodes
    • Cathodes
    • Leakage currents
    • Logic gates
    • Semiconductor diodes
    • Silicon
    • Thyristors

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