An experimental demonstration of a 4.5 kV “Bi-mode Gate Commutated Thyristor” (BGCT)

U. Vemulapati, M. Arnold, M. Rahimo, J. Vobecky, T. Stiasny, Neophytos Lophitis, F. Udrea

Research output: Contribution to conferencePaper

10 Citations (Scopus)

Abstract

In this work we present the first experimental results of a Bi-mode Gate Commutated Thyristor (BGCT). The BGCT is a new type of Reverse Conducting-Integrated Gate Commutated Thyristor (RC-IGCT). In a conventional RC-IGCT, the IGCT and diode are integrated into a single wafer but they are fully separated from each other. The novel BGCT on the other hand features an interdigitated integration of diode- and GCT-areas. This interdigitated integration results in an improved diode as well as GCT area, better thermal distribution, soft turn-off/reverse recovery and lower leakage current compared to conventional RC-IGCTs. We have discussed the advantages of a new diode anode design in BGCT, which is shallower than that of the conventional RC-IGCT. We have successfully demonstrated the BGCT concept with 38 mm, 4.5 kV prototypes and compared the on-state, turn-off and blocking characteristics with conventional RC-IGCTs both in GCT- and diode-modes of operation.
Original languageEnglish
Pages109-112
DOIs
Publication statusPublished - 2015
EventIEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) - , Hong Kong
Duration: 10 May 201514 May 2015

Conference

ConferenceIEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)
CountryHong Kong
Period10/05/1514/05/15

Bibliographical note

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Keywords

  • leakage currents
  • semiconductor diodes
  • thyristors
  • BGCT
  • RC-IGCT
  • bimode gate commutated thyristor
  • diode anode
  • leakage current
  • reverse conducting-integrated gate commutated thyristor
  • soft turn-off-reverse recovery
  • thermal distribution
  • voltage 4.5 kV
  • Bi-mode GCT
  • High power semiconductor switch
  • IGCT
  • Reverse Conducting IGCT
  • Anodes
  • Cathodes
  • Leakage currents
  • Logic gates
  • Semiconductor diodes
  • Silicon
  • Thyristors

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    Vemulapati, U., Arnold, M., Rahimo, M., Vobecky, J., Stiasny, T., Lophitis, N., & Udrea, F. (2015). An experimental demonstration of a 4.5 kV “Bi-mode Gate Commutated Thyristor” (BGCT). 109-112. Paper presented at IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong. https://doi.org/10.1109/ISPSD.2015.7123401