Abstract
In this work we present the first experimental results of a Bi-mode Gate Commutated Thyristor (BGCT). The BGCT is a new type of Reverse Conducting-Integrated Gate Commutated Thyristor (RC-IGCT). In a conventional RC-IGCT, the IGCT and diode are integrated into a single wafer but they are fully separated from each other. The novel BGCT on the other hand features an interdigitated integration of diode- and GCT-areas. This interdigitated integration results in an improved diode as well as GCT area, better thermal distribution, soft turn-off/reverse recovery and lower leakage current compared to conventional RC-IGCTs. We have discussed the advantages of a new diode anode design in BGCT, which is shallower than that of the conventional RC-IGCT. We have successfully demonstrated the BGCT concept with 38 mm, 4.5 kV prototypes and compared the on-state, turn-off and blocking characteristics with conventional RC-IGCTs both in GCT- and diode-modes of operation.
Original language | English |
---|---|
Pages | 109-112 |
DOIs | |
Publication status | Published - 2015 |
Event | IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) - , Hong Kong Duration: 10 May 2015 → 14 May 2015 |
Conference
Conference | IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
---|---|
Country/Territory | Hong Kong |
Period | 10/05/15 → 14/05/15 |
Bibliographical note
The full text is currently unavailable on the repository.Keywords
- leakage currents
- semiconductor diodes
- thyristors
- BGCT
- RC-IGCT
- bimode gate commutated thyristor
- diode anode
- leakage current
- reverse conducting-integrated gate commutated thyristor
- soft turn-off-reverse recovery
- thermal distribution
- voltage 4.5 kV
- Bi-mode GCT
- High power semiconductor switch
- IGCT
- Reverse Conducting IGCT
- Anodes
- Cathodes
- Leakage currents
- Logic gates
- Semiconductor diodes
- Silicon
- Thyristors