Abstract
An advanced sub-circuit model of the punch-trough insulated gate bipolar transistor (PT IGBT) based on the physics of internal device operation has been described in this article. The one-dimensional physical model of low-gain wide-base BJT is employed based on the equivalent non-linear lossy transmission line, whereas a SPICE Level 3 model is used for the diffused MOST part. The influence of voltage dependent drain-to-gate overlapping capacitance and the conductivity modulated base (drain) ohmic resistance are modelled separately. The main advantages of novel PT IGBT model are a small set of model parameters, an easy implementation in SPICE simulator and the high accuracy confirmed by comparing the simulation results with the electrical measurements of test power circuit.
| Original language | English |
|---|---|
| Pages (from-to) | 767-779 |
| Number of pages | 13 |
| Journal | International Journal of Electronics |
| Volume | 96 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 16 Jun 2009 |
| Externally published | Yes |
Funding
Authors thank TOYOTA Motor Corporation, Japan for technical and financial support during this work.
Keywords
- IEBT
- Modelling
- Physical
- SPICE
- Sub-circuit
ASJC Scopus subject areas
- Electrical and Electronic Engineering