An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor

Nebojsa Jankovic; Zhongfu Zhou; Steve Batcup; Petar Igic

doi:10.1080/00207210902847413

An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor

Nebojsa Jankovic, Zhongfu Zhou, Steve Batcup, Petar Igic

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

An advanced sub-circuit model of the punch-trough insulated gate bipolar transistor (PT IGBT) based on the physics of internal device operation has been described in this article. The one-dimensional physical model of low-gain wide-base BJT is employed based on the equivalent non-linear lossy transmission line, whereas a SPICE Level 3 model is used for the diffused MOST part. The influence of voltage dependent drain-to-gate overlapping capacitance and the conductivity modulated base (drain) ohmic resistance are modelled separately. The main advantages of novel PT IGBT model are a small set of model parameters, an easy implementation in SPICE simulator and the high accuracy confirmed by comparing the simulation results with the electrical measurements of test power circuit.

Original language	English
Pages (from-to)	767-779
Number of pages	13
Journal	International Journal of Electronics
Volume	96
Issue number	7
DOIs	https://doi.org/10.1080/00207210902847413
Publication status	Published - 16 Jun 2009
Externally published	Yes

Keywords

IEBT
Modelling
Physical
SPICE
Sub-circuit

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1080/00207210902847413

Cite this

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title = "An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor",

abstract = "An advanced sub-circuit model of the punch-trough insulated gate bipolar transistor (PT IGBT) based on the physics of internal device operation has been described in this article. The one-dimensional physical model of low-gain wide-base BJT is employed based on the equivalent non-linear lossy transmission line, whereas a SPICE Level 3 model is used for the diffused MOST part. The influence of voltage dependent drain-to-gate overlapping capacitance and the conductivity modulated base (drain) ohmic resistance are modelled separately. The main advantages of novel PT IGBT model are a small set of model parameters, an easy implementation in SPICE simulator and the high accuracy confirmed by comparing the simulation results with the electrical measurements of test power circuit.",

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AU - Batcup, Steve

AU - Igic, Petar

PY - 2009/6/16

Y1 - 2009/6/16

N2 - An advanced sub-circuit model of the punch-trough insulated gate bipolar transistor (PT IGBT) based on the physics of internal device operation has been described in this article. The one-dimensional physical model of low-gain wide-base BJT is employed based on the equivalent non-linear lossy transmission line, whereas a SPICE Level 3 model is used for the diffused MOST part. The influence of voltage dependent drain-to-gate overlapping capacitance and the conductivity modulated base (drain) ohmic resistance are modelled separately. The main advantages of novel PT IGBT model are a small set of model parameters, an easy implementation in SPICE simulator and the high accuracy confirmed by comparing the simulation results with the electrical measurements of test power circuit.

AB - An advanced sub-circuit model of the punch-trough insulated gate bipolar transistor (PT IGBT) based on the physics of internal device operation has been described in this article. The one-dimensional physical model of low-gain wide-base BJT is employed based on the equivalent non-linear lossy transmission line, whereas a SPICE Level 3 model is used for the diffused MOST part. The influence of voltage dependent drain-to-gate overlapping capacitance and the conductivity modulated base (drain) ohmic resistance are modelled separately. The main advantages of novel PT IGBT model are a small set of model parameters, an easy implementation in SPICE simulator and the high accuracy confirmed by comparing the simulation results with the electrical measurements of test power circuit.

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An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor

Abstract

Keywords

ASJC Scopus subject areas

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