An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor

Nebojsa Jankovic, Zhongfu Zhou, Steve Batcup, Petar Igic

Research output: Contribution to journalArticle

2 Citations (Scopus)


An advanced sub-circuit model of the punch-trough insulated gate bipolar transistor (PT IGBT) based on the physics of internal device operation has been described in this article. The one-dimensional physical model of low-gain wide-base BJT is employed based on the equivalent non-linear lossy transmission line, whereas a SPICE Level 3 model is used for the diffused MOST part. The influence of voltage dependent drain-to-gate overlapping capacitance and the conductivity modulated base (drain) ohmic resistance are modelled separately. The main advantages of novel PT IGBT model are a small set of model parameters, an easy implementation in SPICE simulator and the high accuracy confirmed by comparing the simulation results with the electrical measurements of test power circuit.

Original languageEnglish
Pages (from-to)767-779
Number of pages13
JournalInternational Journal of Electronics
Issue number7
Publication statusPublished - 16 Jun 2009
Externally publishedYes



  • IEBT
  • Modelling
  • Physical
  • Sub-circuit

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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