@inproceedings{272ea3a3f71140ca83059cd102ee264b,
title = "An advance physics-based sub-circuit model of IGBT",
abstract = "An advanced physics-based equivalent-circuit model of IGBT has been described featuring a high accuracy in predicting device electrical performance in real circuit applications. A SPICE Level 3 model is employed for simulation of the equivalent DMOSFET, while the voltage dependant drain-to-gate overlapping capacitance and drain ohmic resistance elements are modelled separately. The one-dimensional physics-based model of the low-gain BJT device is developed using the equivalent non-linear lossy transmission line sub-circuit. IGBT model is implemented in PSPICE circuit simulator and high accuracy of the model is demonstrated by comparing the simulation results with the electrical measurements of several test power circuits.",
author = "Nebojsa Jankovic and Zhongfu Zhou and Steve Batcup and Petar Igic",
year = "2007",
month = jan,
day = "27",
doi = "10.1109/ISIE.2006.295636",
language = "English",
isbn = "9781424404971",
series = "IEEE International Symposium on Industrial Electronics",
publisher = "IEEE",
pages = "447--452",
booktitle = "International Symposium on Industrial Electronics 2006, ISIE 2006",
address = "United States",
note = "International Symposium on Industrial Electronics 2006, ISIE 2006 ; Conference date: 09-07-2006 Through 13-07-2006",
}