An advance physics-based sub-circuit model of IGBT

Nebojsa Jankovic, Zhongfu Zhou, Steve Batcup, Petar Igic

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

3 Citations (Scopus)

Abstract

An advanced physics-based equivalent-circuit model of IGBT has been described featuring a high accuracy in predicting device electrical performance in real circuit applications. A SPICE Level 3 model is employed for simulation of the equivalent DMOSFET, while the voltage dependant drain-to-gate overlapping capacitance and drain ohmic resistance elements are modelled separately. The one-dimensional physics-based model of the low-gain BJT device is developed using the equivalent non-linear lossy transmission line sub-circuit. IGBT model is implemented in PSPICE circuit simulator and high accuracy of the model is demonstrated by comparing the simulation results with the electrical measurements of several test power circuits.

Original languageEnglish
Title of host publicationInternational Symposium on Industrial Electronics 2006, ISIE 2006
PublisherIEEE
Pages447-452
Number of pages6
ISBN (Print)9781424404971
DOIs
Publication statusPublished - 27 Jan 2007
Externally publishedYes
EventInternational Symposium on Industrial Electronics 2006, ISIE 2006 - Montreal, QC, Canada
Duration: 9 Jul 200613 Jul 2006

Publication series

NameIEEE International Symposium on Industrial Electronics
Volume1

Conference

ConferenceInternational Symposium on Industrial Electronics 2006, ISIE 2006
CountryCanada
CityMontreal, QC
Period9/07/0613/07/06

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering

Cite this

Jankovic, N., Zhou, Z., Batcup, S., & Igic, P. (2007). An advance physics-based sub-circuit model of IGBT. In International Symposium on Industrial Electronics 2006, ISIE 2006 (pp. 447-452). [4077967] (IEEE International Symposium on Industrial Electronics; Vol. 1). IEEE. https://doi.org/10.1109/ISIE.2006.295636