Abstract
A novel power PiN diode model is derived based on the generalised all-injection level minority carrier drift-diffusion theory. An equivalent lossy transmission lines describing the carriers transport trough arbitrarily doped emitter and base quasi-neutral regions are defined. The extended electro-thermal diode model including temperature dependences of carrier transport parameters is also described and implemented in circuit simulator PSPICE. By tuning a small set of model parameters, an excellent agreement of modelling results with numerical simulations of realistic power PiN diode is obtained for different switching conditions and temperatures.
| Original language | English |
|---|---|
| Pages (from-to) | 719-725 |
| Number of pages | 7 |
| Journal | Solid-State Electronics |
| Volume | 51 |
| Issue number | 5 |
| Early online date | 26 Mar 2007 |
| DOIs | |
| Publication status | Published - 1 May 2007 |
| Externally published | Yes |
Keywords
- Diode
- Electro-thermal
- Model
- PiN
- Power
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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