All injection level power PiN diode model including temperature dependence

Nebojsa Jankovic; Tatjana Pesic; Petar Igic

doi:10.1016/j.sse.2007.02.018

All injection level power PiN diode model including temperature dependence

Nebojsa Jankovic, Tatjana Pesic, Petar Igic

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

A novel power PiN diode model is derived based on the generalised all-injection level minority carrier drift-diffusion theory. An equivalent lossy transmission lines describing the carriers transport trough arbitrarily doped emitter and base quasi-neutral regions are defined. The extended electro-thermal diode model including temperature dependences of carrier transport parameters is also described and implemented in circuit simulator PSPICE. By tuning a small set of model parameters, an excellent agreement of modelling results with numerical simulations of realistic power PiN diode is obtained for different switching conditions and temperatures.

Original language	English
Pages (from-to)	719-725
Number of pages	7
Journal	Solid-State Electronics
Volume	51
Issue number	5
Early online date	26 Mar 2007
DOIs	https://doi.org/10.1016/j.sse.2007.02.018
Publication status	Published - 1 May 2007
Externally published	Yes

Keywords

Diode
Electro-thermal
Model
PiN
Power

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2007.02.018

Cite this

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title = "All injection level power PiN diode model including temperature dependence",

abstract = "A novel power PiN diode model is derived based on the generalised all-injection level minority carrier drift-diffusion theory. An equivalent lossy transmission lines describing the carriers transport trough arbitrarily doped emitter and base quasi-neutral regions are defined. The extended electro-thermal diode model including temperature dependences of carrier transport parameters is also described and implemented in circuit simulator PSPICE. By tuning a small set of model parameters, an excellent agreement of modelling results with numerical simulations of realistic power PiN diode is obtained for different switching conditions and temperatures.",

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T1 - All injection level power PiN diode model including temperature dependence

AU - Jankovic, Nebojsa

AU - Pesic, Tatjana

AU - Igic, Petar

PY - 2007/5/1

Y1 - 2007/5/1

N2 - A novel power PiN diode model is derived based on the generalised all-injection level minority carrier drift-diffusion theory. An equivalent lossy transmission lines describing the carriers transport trough arbitrarily doped emitter and base quasi-neutral regions are defined. The extended electro-thermal diode model including temperature dependences of carrier transport parameters is also described and implemented in circuit simulator PSPICE. By tuning a small set of model parameters, an excellent agreement of modelling results with numerical simulations of realistic power PiN diode is obtained for different switching conditions and temperatures.

AB - A novel power PiN diode model is derived based on the generalised all-injection level minority carrier drift-diffusion theory. An equivalent lossy transmission lines describing the carriers transport trough arbitrarily doped emitter and base quasi-neutral regions are defined. The extended electro-thermal diode model including temperature dependences of carrier transport parameters is also described and implemented in circuit simulator PSPICE. By tuning a small set of model parameters, an excellent agreement of modelling results with numerical simulations of realistic power PiN diode is obtained for different switching conditions and temperatures.

KW - Diode

KW - Electro-thermal

KW - Model

KW - PiN

KW - Power

UR - http://www.scopus.com/inward/record.url?scp=34248646250&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2007.02.018

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VL - 51

SP - 719

EP - 725

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 5

ER -

All injection level power PiN diode model including temperature dependence

Abstract

Keywords

ASJC Scopus subject areas

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