All injection level power PiN diode model including temperature dependence

Nebojsa Jankovic, Tatjana Pesic, Petar Igic

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


A novel power PiN diode model is derived based on the generalised all-injection level minority carrier drift-diffusion theory. An equivalent lossy transmission lines describing the carriers transport trough arbitrarily doped emitter and base quasi-neutral regions are defined. The extended electro-thermal diode model including temperature dependences of carrier transport parameters is also described and implemented in circuit simulator PSPICE. By tuning a small set of model parameters, an excellent agreement of modelling results with numerical simulations of realistic power PiN diode is obtained for different switching conditions and temperatures.

Original languageEnglish
Pages (from-to)719-725
Number of pages7
JournalSolid-State Electronics
Issue number5
Early online date26 Mar 2007
Publication statusPublished - 1 May 2007
Externally publishedYes


  • Diode
  • Electro-thermal
  • Model
  • PiN
  • Power

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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