The structure of negative feedback activate junction isolation (JI) used for smart power integrated circuits, was analyzed. The performance of JI was compared with a multiring active analogic protection (MAAP) JI, which is the state-of-the-art device. By ramping a dc voltage on the drain side of the power integrated circuits the structure of both devices were tested. The results show that with the significant reductions in the total charge transfer, maximum output current, and slope of the rising edge of the output pulse which are required for the onset of charge transfer, make this device very useful for efficient cross-talk suppression and latch-up prevention in smart power technology.
|Number of pages||2|
|Journal||Applied Physics Letters|
|Publication status||Published - 21 Jun 2004|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)