AB stacked few layer graphene growth by chemical vapor deposition on single crystal Rh(1 1 1) and electronic structure characterization

Apostolis Kordatos, Nicolas Kelaidis, Sigiava Aminalragia Giamini, Jose Marquez-Velasco, Evangelia Xenogiannopoulou, Polychronis Tsipas, George Kordas, Athanasios Dimoulas

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Graphene synthesis on single crystal Rh(1 1 1) catalytic substrates is performed by Chemical Vapor Deposition (CVD) at 1000 °C and atmospheric pressure. Raman analysis shows full substrate coverage with few layer graphene. It is found that the cool-down rate strongly affects the graphene stacking order. When lowered, the percentage of AB (Bernal) -stacked regions increases, leading to an almost full AB stacking order. When increased, the percentage of AB-stacked graphene regions decreases to a point where almost a full non AB-stacked graphene is grown. For a slow cool-down rate, graphene with AB stacking order and good epitaxial orientation with the substrate is achieved. This is indicated mainly by Raman characterization and confirmed by Reflection high-energy electron diffraction (RHEED) imaging. Additional Scanning Tunneling Microscopy (STM) topography data confirm that the grown graphene is mainly an AB-stacked structure. The electronic structure of the graphene/Rh(1 1 1) system is examined by Angle resolved Photo-Emission Spectroscopy (ARPES), where σ and π bands of graphene, are observed. Graphene's ΓK direction is aligned with the ΓK direction of the substrate, indicating no significant contribution from rotated domains.

Original languageEnglish
Pages (from-to)251-256
Number of pages6
JournalApplied Surface Science
Volume369
Early online date4 Feb 2016
DOIs
Publication statusPublished - 30 Apr 2016

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Graphite
Graphene
Electronic structure
Chemical vapor deposition
graphene
Single crystals
vapor deposition
electronic structure
single crystals
Substrates
Reflection high energy electron diffraction
Emission spectroscopy
Scanning tunneling microscopy
high energy electrons
Topography
Atmospheric pressure
scanning tunneling microscopy
atmospheric pressure
topography
electron diffraction

Bibliographical note

This paper is unavailable in Pure. There is a 24 month embargo period.

Keywords

  • ARPES
  • CVD
  • Graphene
  • Rhodium
  • Stacking
  • STM

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

AB stacked few layer graphene growth by chemical vapor deposition on single crystal Rh(1 1 1) and electronic structure characterization. / Kordatos, Apostolis; Kelaidis, Nicolas; Giamini, Sigiava Aminalragia; Marquez-Velasco, Jose; Xenogiannopoulou, Evangelia; Tsipas, Polychronis; Kordas, George; Dimoulas, Athanasios.

In: Applied Surface Science, Vol. 369, 30.04.2016, p. 251-256.

Research output: Contribution to journalArticle

Kordatos, Apostolis ; Kelaidis, Nicolas ; Giamini, Sigiava Aminalragia ; Marquez-Velasco, Jose ; Xenogiannopoulou, Evangelia ; Tsipas, Polychronis ; Kordas, George ; Dimoulas, Athanasios. / AB stacked few layer graphene growth by chemical vapor deposition on single crystal Rh(1 1 1) and electronic structure characterization. In: Applied Surface Science. 2016 ; Vol. 369. pp. 251-256.
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AU - Xenogiannopoulou, Evangelia

AU - Tsipas, Polychronis

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