Abstract
Wide-bandgap devices offer many benefits. In particular, the new 10 kV silicon carbide (SiC) MOSFETs can switch higher voltages faster and with lower losses than silicon devices while also being smaller in size. However, these features can result in premature dielectric breakdown, higher voltage overshoots, high-frequency current and voltage oscillations, and greater electromagnetic interference. In order to mitigate these side effects and thus fully utilize the benefits of these unique devices, advanced module packaging is needed. This work proposes a power module package with a small footprint (68 mm × 83 mm), low gate-and power-loop inductances (4 nH), increased partial discharge inception voltage (53 %), and reduced common-mode current (90 %).
| Original language | English |
|---|---|
| Title of host publication | PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management |
| Editors | Achim Scharf |
| Publisher | Vde Verlag GmbH |
| Pages | 74-80 |
| Number of pages | 7 |
| Edition | 225809 |
| ISBN (Print) | 9783800746460 |
| Publication status | Published - 1 Jan 2018 |
| Externally published | Yes |
| Event | International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2018 - Nuremberg, Germany Duration: 5 Jun 2018 → 7 Jun 2018 |
Publication series
| Name | PCIM Europe Conference Proceedings |
|---|---|
| Number | 225809 |
| ISSN (Electronic) | 2191-3358 |
Conference
| Conference | International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2018 |
|---|---|
| Abbreviated title | PCIM Europe 2018 |
| Country/Territory | Germany |
| City | Nuremberg |
| Period | 5/06/18 → 7/06/18 |
Funding
The authors acknowledge experimental assistance from Dr. Jianfeng Li and Dr. Robert Skuriat. The authors also acknowledge the assistance of Dr. Xiangyong Feng and the Center for Electromechanics at the University of Texas at Austin in conducting the partial discharge tests. The donation of substrates from DOWA and 10 kV SiC MOSFET die from Wolfspeed, a Cree Company, are greatly appreciated. This work was funded in part by the UK Engineering and Physical Sciences Research Council (EPSRC) through research grant [EP/K035304/1] and the CPES High Density Integration Consortium.
ASJC Scopus subject areas
- Electrical and Electronic Engineering