A wire-bond-less 10 kv sic mosfet power module with reduced common-mode noise and electric field

Christina Dimarino, Bassem Mouawad, Ke Li, Yue Xu, Mark Johnson, Dushan Boroyevich, Rolando Burgos

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

4 Citations (Scopus)

Abstract

Wide-bandgap devices offer many benefits. In particular, the new 10 kV silicon carbide (SiC) MOSFETs can switch higher voltages faster and with lower losses than silicon devices while also being smaller in size. However, these features can result in premature dielectric breakdown, higher voltage overshoots, high-frequency current and voltage oscillations, and greater electromagnetic interference. In order to mitigate these side effects and thus fully utilize the benefits of these unique devices, advanced module packaging is needed. This work proposes a power module package with a small footprint (68 mm × 83 mm), low gate-and power-loop inductances (4 nH), increased partial discharge inception voltage (53 %), and reduced common-mode current (90 %).

Original languageEnglish
Title of host publicationPCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
EditorsAchim Scharf
PublisherVde Verlag GmbH
Pages74-80
Number of pages7
Edition225809
ISBN (Print)9783800746460
Publication statusPublished - 1 Jan 2018
Externally publishedYes
EventInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2018 - Nuremberg, Germany
Duration: 5 Jun 20187 Jun 2018

Publication series

NamePCIM Europe Conference Proceedings
Number225809
ISSN (Electronic)2191-3358

Conference

ConferenceInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2018
Abbreviated titlePCIM Europe 2018
CountryGermany
CityNuremberg
Period5/06/187/06/18

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Dimarino, C., Mouawad, B., Li, K., Xu, Y., Johnson, M., Boroyevich, D., & Burgos, R. (2018). A wire-bond-less 10 kv sic mosfet power module with reduced common-mode noise and electric field. In A. Scharf (Ed.), PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (225809 ed., pp. 74-80). (PCIM Europe Conference Proceedings; No. 225809). Vde Verlag GmbH.