A thermodynamic approach of self- and hetero-diffusion in GaAs: Connecting point defect parameters with bulk properties

V. Saltas, Alexander Chroneos, F. Vallianatos

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    31 Citations (Scopus)
    116 Downloads (Pure)

    Abstract

    The self- and hetero-diffusion in GaAs is investigated in terms of the cBΩ thermodynamic model, which connects point defect parameters with the bulk elastic and expansion properties. Point defect thermodynamic properties such as, activation enthalpy, activation volume, activation Gibbs free energy, activation entropy and isobaric specific heat of activation are calculated as a function of temperature for Ga, H and various n- and p-type dopants (Si, Be, Cr, Fe and Zn) diffused in GaAs. The present calculations are in good agreement with the reported experimental results. The pressure dependence of Ga self-diffusion is also investigated and the diffusivities and activation volumes are predicted at different temperatures from ambient pressure up to 10 GPa, above which GaAs is transformed into the orthorhombic structure. The activation volumes of dopants are also estimated at high temperature (1124 K), as a function of pressure.
    Original languageEnglish
    Pages (from-to)53324-53330
    Number of pages7
    JournalRSC Advances
    Volume58
    Issue number6
    DOIs
    Publication statusPublished - 26 May 2016

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