A physics-based electrical model of a magnetically sensitive AlGaN/GaN HEMT

Nebojsa Jankovic, Soroush Faramehr, Petar Igic

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)
56 Downloads (Pure)

Abstract

The electrical model of a magnetically sensitive two-drain contact AlGaN/GaN HEMT (MagHEMT) is described for the first time and implemented in the SPICE circuit simulator. The macro model is based on the equivalent circuit consisting of two identical and parallelly connected magnetically sensitive AlGaN/GaN HEMTs. The method for including the influence of the magnetic field in a recently proposed physics-based circuit model of GaN HEMTs is also presented. Good accuracy of the MagHEMT electrical model is demonstrated by comparing the SPICE simulations with the measured results of magnetic sensitivity characteristics of fabricated Al0.25Ga0.75N/GaN MagHEMTs with different channel lengths.

Original languageEnglish
Pages (from-to)191-196
Number of pages6
JournalJournal of Computational Electronics
Volume21
Issue number1
Early online date28 Jan 2022
DOIs
Publication statusPublished - Feb 2022

Bibliographical note

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This document is the author’s post-print version, incorporating any revisions agreed during the peer-review process. Some differences between the published version and this version may remain and you are advised to consult the published version if you wish to cite from it.

Keywords

  • AlGaN/GaN HEMT
  • Magnetic sensor
  • SPICE model

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modelling and Simulation
  • Electrical and Electronic Engineering

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