Abstract
The electrical model of a magnetically sensitive two-drain contact AlGaN/GaN HEMT (MagHEMT) is described for the first time and implemented in the SPICE circuit simulator. The macro model is based on the equivalent circuit consisting of two identical and parallelly connected magnetically sensitive AlGaN/GaN HEMTs. The method for including the influence of the magnetic field in a recently proposed physics-based circuit model of GaN HEMTs is also presented. Good accuracy of the MagHEMT electrical model is demonstrated by comparing the SPICE simulations with the measured results of magnetic sensitivity characteristics of fabricated Al0.25Ga0.75N/GaN MagHEMTs with different channel lengths.
| Original language | English |
|---|---|
| Pages (from-to) | 191-196 |
| Number of pages | 6 |
| Journal | Journal of Computational Electronics |
| Volume | 21 |
| Issue number | 1 |
| Early online date | 28 Jan 2022 |
| DOIs | |
| Publication status | Published - Feb 2022 |
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Keywords
- AlGaN/GaN HEMT
- Magnetic sensor
- SPICE model
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Modelling and Simulation
- Electrical and Electronic Engineering