@inproceedings{0700d697ca334eccbf4b410e04cbb053,
title = "A novel n-Si/n-SiC hetero-junction power diode",
abstract = "A novel n-Si/n-SiC power diode that eliminates the p-n junction and exploits solely the Si-SiC heterojunction rectifying properties is presented in this work. Modelling work has been carried out to confirm device physics concept; initial devices have been manufactured and tested, and very encouraging results are achieved.",
keywords = "Diode, Hetero-junction, SiC, Wide bandgap",
author = "M. Lodzinski and N. Jankovic and Guy, {O. J.} and Holland, {P. M.} and P. Igic",
year = "2008",
month = dec,
day = "1",
doi = "10.1049/ic:20080187",
language = "English",
isbn = "9788001041390",
series = "IET Seminar Digest",
publisher = "Institution of Engineering and Technology",
number = "2",
pages = "169--172",
booktitle = "9th International Seminar on Power Semiconductors, ISPS 2008",
address = "United Kingdom",
edition = "2",
note = "9th International Seminar on Power Semiconductors, ISPS 2008 ; Conference date: 27-08-2008 Through 29-08-2008",
}