A novel n-Si/n-SiC hetero-junction power diode

M. Lodzinski, N. Jankovic, O. J. Guy, P. M. Holland, P. Igic

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

Abstract

A novel n-Si/n-SiC power diode that eliminates the p-n junction and exploits solely the Si-SiC heterojunction rectifying properties is presented in this work. Modelling work has been carried out to confirm device physics concept; initial devices have been manufactured and tested, and very encouraging results are achieved.

Original languageEnglish
Title of host publication9th International Seminar on Power Semiconductors, ISPS 2008
PublisherInstitution of Engineering and Technology
Pages169-172
Number of pages4
Edition2
ISBN (Print)9788001041390
DOIs
Publication statusPublished - 1 Dec 2008
Externally publishedYes
Event9th International Seminar on Power Semiconductors, ISPS 2008 - Prague, Czech Republic
Duration: 27 Aug 200829 Aug 2008

Publication series

NameIET Seminar Digest
Number2
Volume2008

Conference

Conference9th International Seminar on Power Semiconductors, ISPS 2008
CountryCzech Republic
CityPrague
Period27/08/0829/08/08

Keywords

  • Diode
  • Hetero-junction
  • SiC
  • Wide bandgap

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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