A model is solved based on the Nernst Planck equation to calculate the diffusion and migration currents for a species in a thin layer (about 200 nm) confined between two electrodes. This is proposed to account for the current voltage behaviour of a memristor constructed in a similar fashion. At the working electrode, an electroactive species is oxidised and at the counter electrode, the same species is reduced. Upon application of a simple voltammetric waveform, the migration current exhibits a resistance profile at slow scan rates and hysteresis at faster scan rates, indicative of memristor behaviour.
- Nernst Planck equation
- Digital simulation
- Titanium dioxide
Cassidy, J., Fox, D., & Betts, A. (2016). A Model for the Voltammetric Behaviour of TiO2 Memristors. Journal of Solid State Electrochemistry, 20(5), 1229-1234. https://doi.org/10.1007/s10008-015-3109-z