A Model for the Voltammetric Behaviour of TiO2 Memristors

John Cassidy, Daryl Fox, Anthony Betts

    Research output: Contribution to journalArticlepeer-review

    3 Citations (Scopus)


    A model is solved based on the Nernst Planck equation to calculate the diffusion and migration currents for a species in a thin layer (about 200 nm) confined between two electrodes. This is proposed to account for the current voltage behaviour of a memristor constructed in a similar fashion. At the working electrode, an electroactive species is oxidised and at the counter electrode, the same species is reduced. Upon application of a simple voltammetric waveform, the migration current exhibits a resistance profile at slow scan rates and hysteresis at faster scan rates, indicative of memristor behaviour.
    Original languageEnglish
    Pages (from-to)1229-1234
    Number of pages6
    JournalJournal of Solid State Electrochemistry
    Issue number5
    Early online date31 Jan 2016
    Publication statusPublished - 1 May 2016


    • Nernst Planck equation
    • Memristor
    • Digital simulation
    • Titanium dioxide


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