Abstract
A model is solved based on the Nernst Planck equation to calculate the diffusion and migration currents for a species in a thin layer (about 200 nm) confined between two electrodes. This is proposed to account for the current voltage behaviour of a memristor constructed in a similar fashion. At the working electrode, an electroactive species is oxidised and at the counter electrode, the same species is reduced. Upon application of a simple voltammetric waveform, the migration current exhibits a resistance profile at slow scan rates and hysteresis at faster scan rates, indicative of memristor behaviour.
| Original language | English |
|---|---|
| Pages (from-to) | 1229-1234 |
| Number of pages | 6 |
| Journal | Journal of Solid State Electrochemistry |
| Volume | 20 |
| Issue number | 5 |
| Early online date | 31 Jan 2016 |
| DOIs | |
| Publication status | Published - 1 May 2016 |
Keywords
- Nernst Planck equation
- Memristor
- Digital simulation
- Titanium dioxide