A Model for the Voltammetric Behaviour of TiO2 Memristors

John Cassidy, Daryl Fox, Anthony Betts

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A model is solved based on the Nernst Planck equation to calculate the diffusion and migration currents for a species in a thin layer (about 200 nm) confined between two electrodes. This is proposed to account for the current voltage behaviour of a memristor constructed in a similar fashion. At the working electrode, an electroactive species is oxidised and at the counter electrode, the same species is reduced. Upon application of a simple voltammetric waveform, the migration current exhibits a resistance profile at slow scan rates and hysteresis at faster scan rates, indicative of memristor behaviour.
Original languageEnglish
Pages (from-to)1229-1234
Number of pages6
JournalJournal of Solid State Electrochemistry
Volume20
Issue number5
Early online date31 Jan 2016
DOIs
Publication statusPublished - 1 May 2016

    Fingerprint

Keywords

  • Nernst Planck equation
  • Memristor
  • Digital simulation
  • Titanium dioxide

Cite this