A magnetic sensitive device, lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor (LD MagFET), combining the sensory operation of conventional magnetic sensitive metal-oxide-semiconductor field-effect transistors (MagFETs) and Hall plates is proposed. The sensor device is fully compatible with a high-voltage complementary metal-oxide-semiconductor (CMOS) technology. It is found that the LD MagFET with integrated Hall plate exhibits an order of magnitude higher relative magnetic sensitivity in comparison with the split-drain silicon MagFETs in standard CMOS.
|Journal||Applied Physics Letters|
|Publication status||Published - 29 Jun 2012|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)