A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate

N. Janković, D. Pantić, S. Batcup, P. Igić

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A magnetic sensitive device, lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor (LD MagFET), combining the sensory operation of conventional magnetic sensitive metal-oxide-semiconductor field-effect transistors (MagFETs) and Hall plates is proposed. The sensor device is fully compatible with a high-voltage complementary metal-oxide-semiconductor (CMOS) technology. It is found that the LD MagFET with integrated Hall plate exhibits an order of magnitude higher relative magnetic sensitivity in comparison with the split-drain silicon MagFETs in standard CMOS.

Original languageEnglish
Article number263507
JournalApplied Physics Letters
Volume100
Issue number26
DOIs
Publication statusPublished - 29 Jun 2012
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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