A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate

N. Janković; D. Pantić; S. Batcup; P. Igić

doi:10.1063/1.4731630

A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate

N. Janković, D. Pantić, S. Batcup, P. Igić

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A magnetic sensitive device, lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor (LD MagFET), combining the sensory operation of conventional magnetic sensitive metal-oxide-semiconductor field-effect transistors (MagFETs) and Hall plates is proposed. The sensor device is fully compatible with a high-voltage complementary metal-oxide-semiconductor (CMOS) technology. It is found that the LD MagFET with integrated Hall plate exhibits an order of magnitude higher relative magnetic sensitivity in comparison with the split-drain silicon MagFETs in standard CMOS.

Original language	English
Article number	263507
Journal	Applied Physics Letters
Volume	100
Issue number	26
DOIs	https://doi.org/10.1063/1.4731630
Publication status	Published - 29 Jun 2012
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "A magnetic sensitive device, lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor (LD MagFET), combining the sensory operation of conventional magnetic sensitive metal-oxide-semiconductor field-effect transistors (MagFETs) and Hall plates is proposed. The sensor device is fully compatible with a high-voltage complementary metal-oxide-semiconductor (CMOS) technology. It is found that the LD MagFET with integrated Hall plate exhibits an order of magnitude higher relative magnetic sensitivity in comparison with the split-drain silicon MagFETs in standard CMOS.",

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AU - Batcup, S.

AU - Igić, P.

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N2 - A magnetic sensitive device, lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor (LD MagFET), combining the sensory operation of conventional magnetic sensitive metal-oxide-semiconductor field-effect transistors (MagFETs) and Hall plates is proposed. The sensor device is fully compatible with a high-voltage complementary metal-oxide-semiconductor (CMOS) technology. It is found that the LD MagFET with integrated Hall plate exhibits an order of magnitude higher relative magnetic sensitivity in comparison with the split-drain silicon MagFETs in standard CMOS.

AB - A magnetic sensitive device, lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor (LD MagFET), combining the sensory operation of conventional magnetic sensitive metal-oxide-semiconductor field-effect transistors (MagFETs) and Hall plates is proposed. The sensor device is fully compatible with a high-voltage complementary metal-oxide-semiconductor (CMOS) technology. It is found that the LD MagFET with integrated Hall plate exhibits an order of magnitude higher relative magnetic sensitivity in comparison with the split-drain silicon MagFETs in standard CMOS.

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A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate

Abstract

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