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A Defects’ based model on the Barrier Height behaviour in 3C-SiC-on-Si Schottky Barrier Diodes
Anastasios Arvanitopoulos, Marina Antoniou, Mike Jennings, Samuel Perkins, Konstantinos N. Gyftakis, P.A. Mawby, Neophytos Lophitis
Research output: Contribution to journal › Article › peer-review
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