A Defects’ based model on the Barrier Height behaviour in 3C-SiC-on-Si Schottky Barrier Diodes

Anastasios Arvanitopoulos, Marina Antoniou, Mike Jennings, Samuel Perkins, Konstantinos N. Gyftakis, P.A. Mawby, Neophytos Lophitis

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)
58 Downloads (Pure)

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Engineering & Materials Science