Abstract
A two-dimensional (2D) physical compact model for advanced power bipolar devices such as Injection Enhanced Gate Transistor (IEGT) or Trench IGBT is presented in this paper. In order to model the complex 2D nature of these devices, the ambipolar diffusion equation has been solved simultaneously for different boundary conditions associated with different areas of the device. The IEGT compact model has been incorporated into the SABER simulator and tested in standard double-pulse switching test circuit. The compact model has been established to model a 4500V-1500 A flat pack TOSHIBA IEGT.
| Original language | English |
|---|---|
| Pages (from-to) | 591-594 |
| Number of pages | 4 |
| Journal | Microelectronics Journal |
| Volume | 35 |
| Issue number | 7 |
| Early online date | 9 Apr 2004 |
| DOIs | |
| Publication status | Published - 1 Jul 2004 |
| Externally published | Yes |
Keywords
- Compact model
- Gate turn-off thyristor
- Insulated gate bipolar transistor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering