A 2D physically based compact model for advanced power bipolar devices

P. M. Igic; M. S. Towers; P. A. Mawby

doi:10.1016/j.mejo.2004.02.006

A 2D physically based compact model for advanced power bipolar devices

P. M. Igic, M. S. Towers, P. A. Mawby

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

A two-dimensional (2D) physical compact model for advanced power bipolar devices such as Injection Enhanced Gate Transistor (IEGT) or Trench IGBT is presented in this paper. In order to model the complex 2D nature of these devices, the ambipolar diffusion equation has been solved simultaneously for different boundary conditions associated with different areas of the device. The IEGT compact model has been incorporated into the SABER simulator and tested in standard double-pulse switching test circuit. The compact model has been established to model a 4500V-1500 A flat pack TOSHIBA IEGT.

Original language	English
Pages (from-to)	591-594
Number of pages	4
Journal	Microelectronics Journal
Volume	35
Issue number	7
Early online date	9 Apr 2004
DOIs	https://doi.org/10.1016/j.mejo.2004.02.006
Publication status	Published - 1 Jul 2004
Externally published	Yes

Keywords

Compact model
Gate turn-off thyristor
Insulated gate bipolar transistor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mejo.2004.02.006

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abstract = "A two-dimensional (2D) physical compact model for advanced power bipolar devices such as Injection Enhanced Gate Transistor (IEGT) or Trench IGBT is presented in this paper. In order to model the complex 2D nature of these devices, the ambipolar diffusion equation has been solved simultaneously for different boundary conditions associated with different areas of the device. The IEGT compact model has been incorporated into the SABER simulator and tested in standard double-pulse switching test circuit. The compact model has been established to model a 4500V-1500 A flat pack TOSHIBA IEGT.",

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AU - Towers, M. S.

AU - Mawby, P. A.

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N2 - A two-dimensional (2D) physical compact model for advanced power bipolar devices such as Injection Enhanced Gate Transistor (IEGT) or Trench IGBT is presented in this paper. In order to model the complex 2D nature of these devices, the ambipolar diffusion equation has been solved simultaneously for different boundary conditions associated with different areas of the device. The IEGT compact model has been incorporated into the SABER simulator and tested in standard double-pulse switching test circuit. The compact model has been established to model a 4500V-1500 A flat pack TOSHIBA IEGT.

AB - A two-dimensional (2D) physical compact model for advanced power bipolar devices such as Injection Enhanced Gate Transistor (IEGT) or Trench IGBT is presented in this paper. In order to model the complex 2D nature of these devices, the ambipolar diffusion equation has been solved simultaneously for different boundary conditions associated with different areas of the device. The IEGT compact model has been incorporated into the SABER simulator and tested in standard double-pulse switching test circuit. The compact model has been established to model a 4500V-1500 A flat pack TOSHIBA IEGT.

KW - Compact model

KW - Gate turn-off thyristor

KW - Insulated gate bipolar transistor

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JO - Microelectronics Journal

JF - Microelectronics Journal

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ER -

A 2D physically based compact model for advanced power bipolar devices

Abstract

Keywords

ASJC Scopus subject areas

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