A 2D physically based compact model for advanced power bipolar devices

P. M. Igic, M. S. Towers, P. A. Mawby

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

A two-dimensional (2D) physical compact model for advanced power bipolar devices such as Injection Enhanced Gate Transistor (IEGT) or Trench IGBT is presented in this paper. In order to model the complex 2D nature of these devices, the ambipolar diffusion equation has been solved simultaneously for different boundary conditions associated with different areas of the device. The IEGT compact model has been incorporated into the SABER simulator and tested in standard double-pulse switching test circuit. The compact model has been established to model a 4500V-1500 A flat pack TOSHIBA IEGT.

Original languageEnglish
Pages (from-to)591-594
Number of pages4
JournalMicroelectronics Journal
Volume35
Issue number7
Early online date9 Apr 2004
DOIs
Publication statusPublished - 1 Jul 2004
Externally publishedYes

Keywords

  • Compact model
  • Gate turn-off thyristor
  • Insulated gate bipolar transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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