4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode

Neophytos Lophitis, M. Antoniou, F. Udrea, U. Vemulapati, M. Arnold, M. Rahimo, J. Vobecky

Research output: Contribution to conferencePaper

1 Citation (Scopus)
98 Downloads (Pure)

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Earth & Environmental Sciences