4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode

Neophytos Lophitis; M. Antoniou; F. Udrea; U. Vemulapati; M. Arnold; M. Rahimo; J. Vobecky

doi:10.1109/ISPSD.2016.7520855

4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode

Neophytos Lophitis, M. Antoniou, F. Udrea, U. Vemulapati, M. Arnold, M. Rahimo, J. Vobecky

Research output: Contribution to conference › Paper

1 Citation (Scopus)

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Abstract

The Bi-mode Gate Commutated Thyristor (BGCT) is a reverse conducting Gate Commutated Thyristor (GCT) where the diode regions are intertwined with GCT parts. In this work we examine the impact of shallow diode-anodes on the operation of the GCT and propose the introduction of optimised High Power Technology (HPT+) in the GCT part. In order to assess and compare the new designs with the conventional, a multi-cell mixed mode model for large area device modelling was used. The analysis of the simulation results show that the shallow diode does not affect the MCC whereas the introduction of the HPT+ allows for a step improvement.

Original language	English
Pages	371-374
DOIs	https://doi.org/10.1109/ISPSD.2016.7520855
Publication status	Published - 28 Jul 2016
Event	2016 28th International Symposium on Power Semiconductor Devices and ICs - Prague, Czech Republic Duration: 12 Jun 2016 → 16 Jun 2016

Conference

Conference	2016 28th International Symposium on Power Semiconductor Devices and ICs
Abbreviated title	ISPSD
Country/Territory	Czech Republic
City	Prague
Period	12/06/16 → 16/06/16

Bibliographical note

© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Keywords

Power semiconductor devices
Integrated circuits
thyristors
diodes
power electronics
thyristor motor drives
voltage 4.5 kV
bi-mode gate commutated thyristor design
BGCT
high power technology
HPT
shallow diode-anode
reverse conducting gate commutated thyristor
multicell mixed mode model

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10.1109/ISPSD.2016.7520855

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4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode. / Lophitis, Neophytos; Antoniou, M.; Udrea, F.; Vemulapati, U.; Arnold, M.; Rahimo, M.; Vobecky, J.

2016. 371-374 Paper presented at 2016 28th International Symposium on Power Semiconductor Devices and ICs, Prague, Czech Republic.

Research output: Contribution to conference › Paper

Lophitis, N, Antoniou, M, Udrea, F, Vemulapati, U, Arnold, M, Rahimo, M & Vobecky, J 2016, '4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode', Paper presented at 2016 28th International Symposium on Power Semiconductor Devices and ICs, Prague, Czech Republic, 12/06/16 - 16/06/16 pp. 371-374. https://doi.org/10.1109/ISPSD.2016.7520855

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abstract = "The Bi-mode Gate Commutated Thyristor (BGCT) is a reverse conducting Gate Commutated Thyristor (GCT) where the diode regions are intertwined with GCT parts. In this work we examine the impact of shallow diode-anodes on the operation of the GCT and propose the introduction of optimised High Power Technology (HPT+) in the GCT part. In order to assess and compare the new designs with the conventional, a multi-cell mixed mode model for large area device modelling was used. The analysis of the simulation results show that the shallow diode does not affect the MCC whereas the introduction of the HPT+ allows for a step improvement. ",

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AU - Vemulapati, U.

AU - Arnold, M.

AU - Rahimo, M.

AU - Vobecky, J.

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N2 - The Bi-mode Gate Commutated Thyristor (BGCT) is a reverse conducting Gate Commutated Thyristor (GCT) where the diode regions are intertwined with GCT parts. In this work we examine the impact of shallow diode-anodes on the operation of the GCT and propose the introduction of optimised High Power Technology (HPT+) in the GCT part. In order to assess and compare the new designs with the conventional, a multi-cell mixed mode model for large area device modelling was used. The analysis of the simulation results show that the shallow diode does not affect the MCC whereas the introduction of the HPT+ allows for a step improvement.

AB - The Bi-mode Gate Commutated Thyristor (BGCT) is a reverse conducting Gate Commutated Thyristor (GCT) where the diode regions are intertwined with GCT parts. In this work we examine the impact of shallow diode-anodes on the operation of the GCT and propose the introduction of optimised High Power Technology (HPT+) in the GCT part. In order to assess and compare the new designs with the conventional, a multi-cell mixed mode model for large area device modelling was used. The analysis of the simulation results show that the shallow diode does not affect the MCC whereas the introduction of the HPT+ allows for a step improvement.

KW - Power semiconductor devices

KW - Integrated circuits

KW - thyristors

KW - diodes

KW - power electronics

KW - thyristor motor drives

KW - voltage 4.5 kV

KW - bi-mode gate commutated thyristor design

KW - BGCT

KW - high power technology

KW - HPT

KW - shallow diode-anode

KW - reverse conducting gate commutated thyristor

KW - multicell mixed mode model

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T2 - 2016 28th International Symposium on Power Semiconductor Devices and ICs

Y2 - 12 June 2016 through 16 June 2016

ER -

4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode

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Conference

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Keywords

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