4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode

Neophytos Lophitis, M. Antoniou, F. Udrea, U. Vemulapati, M. Arnold, M. Rahimo, J. Vobecky

Research output: Contribution to conferencePaper

1 Citation (Scopus)
73 Downloads (Pure)

Abstract

The Bi-mode Gate Commutated Thyristor (BGCT) is a reverse conducting Gate Commutated Thyristor (GCT) where the diode regions are intertwined with GCT parts. In this work we examine the impact of shallow diode-anodes on the operation of the GCT and propose the introduction of optimised High Power Technology (HPT+) in the GCT part. In order to assess and compare the new designs with the conventional, a multi-cell mixed mode model for large area device modelling was used. The analysis of the simulation results show that the shallow diode does not affect the MCC whereas the introduction of the HPT+ allows for a step improvement.
Original languageEnglish
Pages371-374
DOIs
Publication statusPublished - 28 Jul 2016
Event2016 28th International Symposium on Power Semiconductor Devices and ICs - Prague, Czech Republic
Duration: 12 Jun 201616 Jun 2016

Conference

Conference2016 28th International Symposium on Power Semiconductor Devices and ICs
Abbreviated titleISPSD
CountryCzech Republic
CityPrague
Period12/06/1616/06/16

Fingerprint

Thyristors
Anodes
Diodes

Bibliographical note

© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Keywords

  • Power semiconductor devices
  • Integrated circuits
  • thyristors
  • diodes
  • power electronics
  • thyristor motor drives
  • voltage 4.5 kV
  • bi-mode gate commutated thyristor design
  • BGCT
  • high power technology
  • HPT
  • shallow diode-anode
  • reverse conducting gate commutated thyristor
  • multicell mixed mode model

Cite this

Lophitis, N., Antoniou, M., Udrea, F., Vemulapati, U., Arnold, M., Rahimo, M., & Vobecky, J. (2016). 4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode. 371-374. Paper presented at 2016 28th International Symposium on Power Semiconductor Devices and ICs, Prague, Czech Republic. https://doi.org/10.1109/ISPSD.2016.7520855

4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode. / Lophitis, Neophytos; Antoniou, M.; Udrea, F.; Vemulapati, U.; Arnold, M.; Rahimo, M.; Vobecky, J.

2016. 371-374 Paper presented at 2016 28th International Symposium on Power Semiconductor Devices and ICs, Prague, Czech Republic.

Research output: Contribution to conferencePaper

Lophitis, N, Antoniou, M, Udrea, F, Vemulapati, U, Arnold, M, Rahimo, M & Vobecky, J 2016, '4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode' Paper presented at 2016 28th International Symposium on Power Semiconductor Devices and ICs, Prague, Czech Republic, 12/06/16 - 16/06/16, pp. 371-374. https://doi.org/10.1109/ISPSD.2016.7520855
Lophitis N, Antoniou M, Udrea F, Vemulapati U, Arnold M, Rahimo M et al. 4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode. 2016. Paper presented at 2016 28th International Symposium on Power Semiconductor Devices and ICs, Prague, Czech Republic. https://doi.org/10.1109/ISPSD.2016.7520855
Lophitis, Neophytos ; Antoniou, M. ; Udrea, F. ; Vemulapati, U. ; Arnold, M. ; Rahimo, M. ; Vobecky, J. / 4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode. Paper presented at 2016 28th International Symposium on Power Semiconductor Devices and ICs, Prague, Czech Republic.
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