3C-SiC-on-Si MOSFETs: Overcoming Material Technology Limitations

Anastasios Arvanitopoulos, Marina Antoniou, Fan Li, Mike R. Jennings, Samuel Perkins, Konstantinos Gyftakis, Neophytos Lophitis

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The cubic polytype (3C-) of silicon carbide (SiC) is an emerging semiconductor technology for power devices. The featured isotropic material properties along with the wide band gap characteristics make it an excellent choice for power metal oxide semiconductor field effect transistors (mosfets). It can be grown on silicon (Si) substrates which is itself advantageous. However, the allowable annealing temperature is limited by the melting temperature of Si. Hence, devices making use of 3C-SiC on Si substrate technology suffer from poor or even almost negligible activation of the p-type dopants after ion implantation due to the relatively low allowable annealing temperature. In this article, a novel process flow for a vertical 3C-SiC-on-Si mosfet is presented to overcome the difficulties that currently exist in obtaining a p-body region through implantation. The proposed design has been accurately simulated with technology computer-aided design process and device software. To ensure reliable prediction, a previously validated set of material models has been used. Further, a channel mobility physics model was developed and validated against experimental data. The output characteristics of the proposed device demonstrated promising performance, what is potentially the solution needed and a huge step toward the realization of 3C-SiC-on-Si mosfets with commercially grated characteristics.

Original languageEnglish
Pages (from-to)565-575
Number of pages11
JournalIEEE Transactions on Industry Applications
Volume58
Issue number1
Early online date11 Oct 2021
DOIs
Publication statusPublished - 2022

Keywords

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Control and Systems Engineering

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